High power CW red VECSEL with linearly polarized TEM_00 output beam

Hastie, Jennifer E.; Calvez, S.; Dawson, Martin D.; Leinonen, Tomi; Laakso, A.; Lyytikäinen, Jari; Pessa, M.

doi:10.1364/opex.13.000077

Cited by 122 publications

(41 citation statements)

References 11 publications

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“…At the high operating temperature of the laser, the peak output wavelength was 674 nm. The maximum output power with 2% output coupling was 0.4 W for ∼ 3.2 W input power and the slope efficiency was 17% [65]. This result was later improved with an MOCVD grown structure and increased pump power and output coupling to achieve 1.1 W output power with a slope efficiency of 20% [66].…”

Section: Green-pumped Red Sdlsmentioning

confidence: 92%

“…We have since reported Watt-level CW operation at room temperature with a 20QW red SDL with a diamond heatspreader (see Fig. 11) [65]. This laser and its successors will be discussed in the following sections.…”

Section: General Issues Related To Materials and Pumpingmentioning

confidence: 99%

“…The first high power CW red SDL [65] had a relatively simple gain structure design within the bandgap constraints described in the previous section. Grown by MBE on an undoped GaAs substrate, it consisted of a 40 pair AlAs/Al 0.45 Ga 0.…”

Section: Green-pumped Red Sdlsmentioning

confidence: 99%

See 2 more Smart Citations

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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Section: Green-pumped Red Sdlsmentioning

confidence: 92%

Section: General Issues Related To Materials and Pumpingmentioning

confidence: 99%

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Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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“…The design of the SDL gain structure is similar to those we have previously reported [14]. It contains ten pairs of strained GaInP quantum wells, embedded in AlGaInP barriers and evenly distributed at the antinode positions of the resonant internal optical field.…”

Section: Description Of the Laser Cavitymentioning

confidence: 99%

Tunable narrow linewidth AlGaInP semiconductor disk laser for Sr atom cooling applications

Pabœuf

Hastie

2016

Appl. Opt.

Self Cite

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We report a frequency stabilised semiconductor disk lasers based on AlGaInP and operating at 689 nm, a wavelength of interest for atomic clocks based on strontium atoms. With a gain structure designed for emission at around 690 nm, more than 100 mW of output power was generated in single frequency operation. We show that the source can be tuned over 8 nm with picometer precision. By servo-locking the frequency to the side of fringe of a reference cavity, we demonstrate rms frequency noise of 5.2 kHz.

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“…7,8 Their differential gain, gain bandwidth, and peak gain wavelength are a matter of current research. [9][10][11] Using our novel spectroscopic setup, we report ultrafast measurements of the carrier dynamics in a red-emitting VECSEL multiple-quantum-well (MQW) gain element. The structure is shown in the inset of Fig.…”

mentioning

confidence: 99%

High-repetition-rate white-light pump-probe spectroscopy with a tapered fiber

et al. 2006

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We have realized a 76 MHz white-light differential transmission spectroscopy system. The technique employs a Ti:sapphire laser oscillator and a tapered fiber to generate a white-light continuum spanning almost the full visible to near-infrared spectral range. Using acousto-optical modulation and subsequent lock-in detection, transient relative transmission changes as small as 10 −5 are detected. The method is applied to study the ultrafast gain dynamics of the active layer of a vertical-external-cavity surface-emitting laser based on a multiple-quantum-well structure. © 2006 Optical Society of America OCIS codes: 320.7130, 320.7140, 320.7150. The investigation of charge-carrier dynamics in semiconductor heterostructures is one of the most important applications of femtosecond pump-probe spectroscopy. 1,2 Compared with pump-probe spectroscopy using a single wavelength, the use of a white-light probe pulse allows for much more insight into the underlying processes. For the investigation of semiconductor thin films for laser applications this is of particular importance, since the gain spectrum determines the device operation. The conventional approach for multiwavelength differential transmission spectroscopy is the use of an amplified femtosecond laser system to create a high-energy pump pulse that is focused onto a nonlinear medium to generate a white-light continuum. The drawbacks of this approach are the complexity and the high costs of such femtosecond laser amplifier systems. In another approach the use of an extremely short pulse ͑5 fs͒ as an ultrabroadband probe beam source was demonstrated. 3Recently, white-light continuum generation using unamplified Ti:sapphire laser oscillators was demonstrated with microstructured as well as tapered fibers.4,5 Tapered fibers are single-mode optical fibers drawn over a flame to form a region where the fiber diameter is significantly decreased over a certain length. Light of an incoming laser pulse is concentrated in the taper region. The main nonlinear effects for the white-light generation process are self-phase modulation, soliton splitting, Raman scattering, and four-wave mixing. 6 This remarkable simplification of the white-light generation process also opens up possibilities for less complex but powerful setups for pump-probe spectroscopy. Here we demonstrate for the first time to our knowledge the use of 76 MHz spectroscopy by means of the white light generated in a tapered fiber to study the gain dynamics in a semiconductor heterostructure.The structure under investigation is the gain region of a vertical-external-cavity surface-emitting laser (VECSEL). These devices have recently emerged as an important class of semiconductor lasers because of their ability to generate near-transformlimited subpicosecond pulses at high average power and repetition rates of many gigahertz. 7,8 Their differential gain, gain bandwidth, and peak gain wavelength are a matter of current research.9-11 Using our novel spectroscopic setup, we report ultrafast measurements of the car...

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High power CW red VECSEL with linearly polarized TEM_00 output beam

Cited by 122 publications

References 11 publications

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Tunable narrow linewidth AlGaInP semiconductor disk laser for Sr atom cooling applications

High-repetition-rate white-light pump-probe spectroscopy with a tapered fiber

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