2007
DOI: 10.1049/el:20071185
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High-power distributed Bragg reflector lasers operating at 1065 nm

Abstract: A report is presented on distributed Bragg reflector lasers emitting in excess of 700 mW in a single-spatial and single-spectral mode at 1065 nm. The threshold current of these devices is $30 mA, there is an L-I slope of 0.74 W=A, and a sidemode suppression ratio greater than 30 dB. The current and thermal tuning are 0.016 Å =mA and 0.7 Å = C, respectively.

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Cited by 18 publications
(9 citation statements)
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“…High-power single-lateral-mode DFB and DBR lasers have been realized at 650nm (Pezeshki et al, 1998), between 760 and 800nm (Inoguchi et al, 1994;Morris et al, 1995;Takigawa et al, 1989;Wenzel et al, 2004a), between 850 and 900nm (Klehr et al, 2007b;Major et al, 1994;Price et al, 2006;Vermersch et al, 2008;Wenzel et al, 2002), between 940 and 990nm Fricke et al, 2005;Klehr et al, 2007a;Lammert et al, 1998;Mü ller et al, 2004;Nichols et al, 1993;Paschke et al, 2010;Sin and Horikawa, 1993;Wenzel et al, 2006a,b;Yang et al, 1998), and between 1060 and 1090nm (Achtenhagen et al, 2007;Hofmann et al, 1999Hofmann et al, , 2000aMajor and Welch, 1993;Nguyen et al, 2007). High-power single-lateral-mode DFB and DBR lasers have been realized at 650nm (Pezeshki et al, 1998), between 760 and 800nm (Inoguchi et al, 1994;Morris et al, 1995;Takigawa et al, 1989;Wenzel et al, 2004a), between 850 and 900nm (Klehr et al, 2007b;Major et al, 1994;Price et al, 2006;Vermersch et al, 2008;Wenzel et al, 2002), between 940 and 990nm Fricke et al, 2005;Klehr et al, 2007a;Lammert et al, 1998;Mü ller et al, 2004;…”
Section: Single-lateral-mode Lasersmentioning
confidence: 99%
“…High-power single-lateral-mode DFB and DBR lasers have been realized at 650nm (Pezeshki et al, 1998), between 760 and 800nm (Inoguchi et al, 1994;Morris et al, 1995;Takigawa et al, 1989;Wenzel et al, 2004a), between 850 and 900nm (Klehr et al, 2007b;Major et al, 1994;Price et al, 2006;Vermersch et al, 2008;Wenzel et al, 2002), between 940 and 990nm Fricke et al, 2005;Klehr et al, 2007a;Lammert et al, 1998;Mü ller et al, 2004;Nichols et al, 1993;Paschke et al, 2010;Sin and Horikawa, 1993;Wenzel et al, 2006a,b;Yang et al, 1998), and between 1060 and 1090nm (Achtenhagen et al, 2007;Hofmann et al, 1999Hofmann et al, , 2000aMajor and Welch, 1993;Nguyen et al, 2007). High-power single-lateral-mode DFB and DBR lasers have been realized at 650nm (Pezeshki et al, 1998), between 760 and 800nm (Inoguchi et al, 1994;Morris et al, 1995;Takigawa et al, 1989;Wenzel et al, 2004a), between 850 and 900nm (Klehr et al, 2007b;Major et al, 1994;Price et al, 2006;Vermersch et al, 2008;Wenzel et al, 2002), between 940 and 990nm Fricke et al, 2005;Klehr et al, 2007a;Lammert et al, 1998;Mü ller et al, 2004;…”
Section: Single-lateral-mode Lasersmentioning
confidence: 99%
“…Although the phase in DBR lasers can be controlled, these devices tend to show mode hoping that results in nonlinearities in the light-current characteristics. High output powers of up to 700 mW from single emitter chips and high reliability close to 10,000 hours could be demonstrated [95,96]. A distributed feedback (DFB) diode laser is depicted in Fig.…”
Section: Diode Lasers With Integrated Bragg Reflectorsmentioning
confidence: 99%
“…Bragg reflectors have already attracted interest of researchers for their possible novel applications as optical transmitter [1][2], LED [3], reflectivity modulators [4], solar cell [5]. Highly transparent dielectric materials are required are used to construct Bragg mirrors in order to minimize the loss due to optical absorption [6][7][8].…”
Section: Introductionmentioning
confidence: 99%