In this paper, we demonstrate a high‐power erbium‐doped fiber amplifier pumped by single‐mode titanium sapphire (Ti:S) laser at 980 nm. The highest output power of 22.6 dBm is measured at 1549 nm with an input signal power of 4 dBm and a pump power of 300 mW. This corresponds to power‐conversion efficiency (PCE) of 60%, providing 95% quantum efficiency. The experimental results show the feasibility of using a single‐mode laser from a high‐power semiconductor chip to produce high‐efficiency booster amplifiers. © Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 71–74, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21264