Ab~truct-YBa~Cu~0~-, thin films were prepared on 2 inch in diameter (1102) sapphire substrates buffered with Ce02 layer of mixed (001)/(111) orientation. The thickness of the YBazCu307., films was typically -250 nm. The YBa2C~307-x thin films exhibited smooth surfaces (peak-to-valley roughness of less than 20 nm) free of cracks and outgrowths. The critical temperatures of these films were 87 -89 K, the critical current densities (2-3).106 Mcm2 at 77 K and zero magnetic field. The low field microwave surface resistance (Rs) of the YBa2C~307-n films was measured at 18.7 GHz. Values of -1.4 mR were obtained at 77 K and < 70 pR below 20 K. Such low Rs values are comparable to the lowest reported values for thicker YBa2Cu307., films grown epitaxially on structurally well-matched substrates, e.g. LaA103. The elevation of the microwave power produced a weak increase of R,. No drastic changes in Rs occur up to the maximum magnetic field of -35 Oe at 79 K and -63 Oe at 50 K. The properties of the YBa2Cu30,-x films do not degrade with time.