2018 IEEE Photonics Conference (IPC) 2018
DOI: 10.1109/ipcon.2018.8527260
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High-Power Flip-Chip Bonded Modified Uni-Traveling Carrier Photodiodes with −2.6 dBm RF Output Power at 160 GHz

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Cited by 23 publications
(13 citation statements)
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“…Once in the drift layer, electron space-charge effects are mitigated or chargecompensated by the light n-type doping in the drift layer 44 . Fabrication flow of the PDs and similar PD epitaxial layering structures have been reported previously 45 , and so has the AlN submount 46 . The MUTC PDs used in this experiment have demonstrated dark currents as low as 200 pA at − 2 V, a 3-dB bandwidth of up to 145 GHz (4 μm diameter PD), a responsivity of 0.2 A/W at 1550 nm, and a −2.6 dBm maximum output power at 160 GHz at − 3 V bias 38 .…”
Section: Modified Uni-traveling Carrier Photodiodementioning
confidence: 66%
“…Once in the drift layer, electron space-charge effects are mitigated or chargecompensated by the light n-type doping in the drift layer 44 . Fabrication flow of the PDs and similar PD epitaxial layering structures have been reported previously 45 , and so has the AlN submount 46 . The MUTC PDs used in this experiment have demonstrated dark currents as low as 200 pA at − 2 V, a 3-dB bandwidth of up to 145 GHz (4 μm diameter PD), a responsivity of 0.2 A/W at 1550 nm, and a −2.6 dBm maximum output power at 160 GHz at − 3 V bias 38 .…”
Section: Modified Uni-traveling Carrier Photodiodementioning
confidence: 66%
“…Once in the drift layer, electron space-charge effects are mitigated or charge-compensated by the light n-type doping in the drift layer 42 . Fabrication flow of the PDs and similar PD epitaxial layering structures have been reported previously 43 , and so has the AlN submount 44 . The MUTC PDs used in this experiment have demonstrated dark currents as low as 200 pA at -2 V, 3-dB bandwidth of up to 145 GHz (4-µm diameter PD), responsivity of 0.2 A/W at 1550-nm, and -2.6 dBm maximum output power at 160 GHz at -3 V bias 37 .…”
Section: Methodsmentioning
confidence: 66%
“…We photodetect the entire soliton, except the pump laser, and record the relative intensity noise with an electronic spectrum analyzer (ESA). Additionally, we use a ∼ 150 GHz bandwidth modified uni-traveling carrier photodetector [32] and an ESA to record the outcoming pattern repetition frequency of suitable PhCR devices.…”
Section: Apparatus and Proceduresmentioning
confidence: 99%
“…This signal results from a reflection of the backward-propagating comb to the forward transmission port. To measure the repetition frequency, we couple a portion of the comb power to a ∼ 150 GHz bandwidth, 0.2 A/W responsivity photodetector [32]. We use an optical circulator and a 2 THz bandwidth optical filter prior to photodetection to reduce photocurrent from the pump laser.…”
Section: Frequency-comb Sources From the Dark-to-bright Pulse Continuummentioning
confidence: 99%