High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Zhao, Qiang; Miao, Jifei; Zhou, Shengjun; Chen, Gui; Tang, Bin; Liu, Mengling; Wan, Hui; Hu, Jingjing

doi:10.3390/nano9081178

Cited by 13 publications

(7 citation statements)

References 33 publications

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“…Hence in the past few years, GaN is extensively used to fabricate optoelectronic devices such as high‐power light‐emitting diodes. [ 7 ] Most of these devices are demonstrated using epitaxial films of GaN grown along c‐axis, that is, [ 1 ] orientation. The performance and the efficiency of these devices mainly depend on the quality growth of GaN films with suitable dopants incorporated to have better control on its physical properties.…”

Section: Introductionmentioning

confidence: 99%

Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films

Rajgoli

Hinde²,

Sant

et al. 2023

Physica Status Solidi (b)

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Among other group III-nitride semiconductor materials, gallium nitride (GaN) has received considerable attention for fabricating optical devices mainly in the UV region. [1] Along with this for fabricating a number of electronic gadgets, for example, high-power and high-frequency devices, [2] high-speed data transmitters, [3] high-voltage switching devices, [4,5] etc., extensive use of GaN is also well known. This demonstrates that GaN as a material has not only received special attention by the scientific community but also acknowledged due to its commercial importance. It's high electron saturation velocity (%1 Â 10 7 cm s À1 ), greater breakdown field than the Si, [6] and sustainability to work at high operating temperatures are key to realize such applications. The material has a wide bandgap of %3.4 eV at 300 K. [6] Excellent solubility with the other III-nitride semiconductor materials especially InN and AlN has enabled researchers to tune the bandgap of a material as per requirement. Hence in the past few years, GaN is extensively used to fabricate optoelectronic devices such as high-power light-emitting diodes. [7] Most of these devices are demonstrated using epitaxial films of GaN grown along c-axis, that is, [1] orientation. The performance and the efficiency of these devices mainly depend on the quality growth of GaN films with suitable dopants incorporated to have better control on its physical properties. Mostly epitaxial growth of GaN on GaN substrate is preferred but it is extremely expensive. Hence, epitaxial growth of GaN on low-cost substrates, for example, sapphire, Si, etc., for its commercial uses is justifiable. To grow epitaxial films of GaN on sapphire conventional methods, for example, molecular beam epitaxy (MBE), [1] metal-organic chemical vapor deposition (MOCVD), [8] atomic layer deposition (ALD), [9] metal-organic vapor-phase epitaxy (MOVPE) [10] are preferably used due to their due advantages. The use of a pulsed laser deposition (PLD) for growing GaN films is also demonstrated, taking its unique capabilities into consideration. [11,12] However, it is observed that optoelectronic devices fabricated using c-plane GaN suffer from piezoelectric polarization effect, affecting the carrier recombination lifetime and quantum efficiency of devices known as quantum conferment Stark effect. [13] Avoiding the Stark effect quality growth of GaN films along nonpolar surfaces is suggested. Hence, researchers are intensively studying the growth of GaN films along nonpolar surfaces such as m-and a-planes. [13][14][15] Mostly growth of a-plane GaN using r-plane sapphire, (010) LAO substrate, etc. is widely

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Section: Introductionmentioning

confidence: 99%

Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films

Rajgoli

Hinde²,

Sant

et al. 2023

Physica Status Solidi (b)

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“…Special efforts have been made for vdW growth on large surfaces, which is necessary for the commercialization of this technology. [13][14][15][16][17] Our group has successfully demonstrated vdW application on 2-inch and 4-inch sapphire substrates. [18][19][20] One important challenge for h-BN based vdW growth on large surface areas is the spontaneous delamination that occurs during growth, cooling, or device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates

Vuong

Moudakir

Gujrati

et al. 2023

Adv Materials Technologies

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The growth of hexagonal boron nitride (h‐BN) and van der Waals (vdW) epitaxy of blue multi‐quantum well (MQW) GaN‐based LED heterostructures on 6‐inch sapphire substrates using metal‐organic chemical vapour deposition (MOCVD) is demonstrated. Challenges associated with the growth of large surface h‐BN and the subsequent vdW epitaxy of GaN‐based LED heterostructures are discussed. To overcome these challenges, the spatial uniformity is controlled of the growth temperature, optimizes the slope of temperature variations during the growth and cooling process, and manages the surface temperature during switching of gas flows. With these adaptations, high quality GaN‐based LED heterostructures are grown on h‐BN without any spontaneous delamination. The GaN‐based LED devices are then fabricated on a 6‐inch sapphire wafer, which are lifted off as a membrane and transferred to a flexible copper support. These GaN‐based LED devices emitt bright blue illumination with an electroluminescence peak at 437 nm. This scaling up of growth, lift‐off, and transfer can lead to the commercialization of GaN‐based LEDs on h‐BN template on 6‐inch sapphire substrates, with a process compatible with current modern equipment for the fabrication of LEDs and electronic devices.

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“…Gallium nitride (GaN) has been reckoned as a prospective material for next-generation electron devices adopted in all kinds of applications, such as high-power illumination [1], sensing in severe conditions [2][3][4], wireless power transportation [5][6][7][8][9], and digital logic [10], thanks to its excellent material properties. In high-power applications particularly, GaN heterojunction devices are highly preferred because of the potential for realizing the monolithic integration with other components, e.g., Light Emitting Diode (LED) [11].…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional polarization doping of GaN heterojunction and its potential for realizing lateral p–n junction devices

Wang

2022

Appl. Phys. A

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In the gallium nitride (GaN) commercial applications such as high-power illumination and portable charging station, bipolar devices are highly demanded because of their superior power transfer capability. Also, in other scenarios of the monolithic integration where high electron mobility transistors (HEMTs) or superlattice-based devices are presented, the peripheral components are preferred to be lateral. However, to realize such a lateral bipolar junction in GaN, high-concentration p-type dopant doping is still challenging and hardly compatible with the HEMT integration. In this work, we proposed a novel strategy to form lateral bipolar GaN p–n junctions, enabled by the two-dimensional polarization doping. The theory and the simulation reveal this strategy features inspiring forwarding, blocking, and switching performance. Given the recent success of the GaN selective area regrowth techniques, the proposed lateral bipolar junction is highly promising in monolithic heterojunction integration in the future.

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High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Cited by 13 publications

References 33 publications

Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films

Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films

Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates

Two-dimensional polarization doping of GaN heterojunction and its potential for realizing lateral p–n junction devices

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