High-power, high-efficiency 808 nm laser diode array

Wang, Zhenfu; Yang, Gaowen; Jian-Yao, Wu; Kechang, Song; Li, Xiushan; Song, Yunfei

doi:10.7498/aps.65.164203

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…The facets will be localized, melted, and there will be occurrence of COMD. 1,2 Regarding the enhancement of the power of semiconductor lasers, various techniques have been employed, including the design of an asymmetric wide waveguide epitaxial structure, 3 secondary epitaxy, facet passivation, and quantum well intermixing (QWI). QWI, serving as a postprocessing procedure, demonstrates procedural simplicity, obviating the necessity for the design of epitaxial structures.…”

Section: Introductionmentioning

confidence: 99%

Research on the fabrication of high-power semiconductor lasers by impurity-free vacancy disordering

He,

Qi,

Lin

et al. 2023

Opt. Eng.

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Section: Introductionmentioning

confidence: 99%

Research on the fabrication of high-power semiconductor lasers by impurity-free vacancy disordering

He,

Qi,

Lin

et al. 2023

Opt. Eng.

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Efficiency analysis of 808 nm laser diode array under different operating temperatures

Song¹,

Wang²,

Li³

et al. 2017

Acta Phys. Sin.

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The 808 nm high-efficiency laser diodes have many advantages, such as high output power, high reliabilities, compact sizes, which are widely used in many areas, such as industry, communication, science, medicine and biology. In order to improve the power conversion efficiencies of 808 nm laser diodes, the following requirements must be considered, such as loss of joule heating, loss by the carrier leakage, spontaneous radiation loss below the threshold current, loss by interface voltage defect, internal losses including free-carrier absorption loss and scattering loss. These losses above are closely related to the operating temperature of laser diode. In this paper, power conversion efficiency analysis is demonstrated from the aspects of the output power, threshold current, slope efficiency, voltage, and series resistance at different temperatures.. This is the first time that the detailed study has been carried out under various temperatures (up to the lowest temperature of -40℃). And the detailed study above can be of benefit to designing the wafer epitaxial structure. High-power 808 nm laser diode arrays are mounted on conduction cooled heatsinks. And the laser chips have 47 emitters with 50% in fill factor, 100 m stripe in width and 1.5 mm in cavity length. The asymmetric broad waveguide epitaxial structure with lower absorption loss in p-type waveguide and cladding layer is designed in order to reduce the internal losses. The device performances are measured under operating temperatures ranging from -40℃ to 25℃ including the output power, threshold current, slope efficiency, series resistance, voltage, etc. Then the power conversion efficiency of 808 nm laser diode arrays are demonstrated from the output characteristics at different operating temperatures. With temperature decreasing, the series resistance gradually increases. The loss of joule heating ratio rises from 7.8% to 10.3%. In that case, the high series resistance is the major factor to prevent the efficiency from further improving at a low temperature of -40℃. As temperature decreases from 25℃ to -40℃, the carrier leakage ratio is reduced from 16.6% to 3.1%, the carrier leakage is the dominant factor for increasing efficiency, which means that it is necessary to optimize the epitaxial structure in order to reduce the carrier leakage at the room temperature. Comparing the two different work temperatures from -30℃ to -40℃, the carrier leakage ratio only changes 0.1%, which implies that the carrier leakage could be ignored under the low temperature. Meanwhile, as temperature decreases from 25℃ to -40℃, the power conversion efficiency increases from 56.7% to 66.8%.

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Design of active region for GaAsP/AlGaAs tensile strain quantum well laser diodes near 800 nm wavelength

李建军¹

2018

Acta Phys. Sin.

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As an active region, the tensile strain GaAs1-xPx quantum well plays an important role in the high power semiconductor laser diode with a wavelength of about 800 nm. Accompanied with the improved stability due to the Al-free active region, the GaAs1-xPx quantum well laser also shows a high level of catastrophic optical mirror damage because of the non-absorbing window at the facet, which is formed automatically by the relaxation of the tensile strain GaAs1-xPx material. On the other side, the GaAs1-xPx quantum well laser can provide a transverse magnetic (TM) polarized light source which is important for many solid state laser systems. However, the energy band structure of the tensile strain GaAs1-xPx quantum well is more complicated than that of the compressed or lattice matched quantum well. Although the light hole band is on the top of the heavy hole band for the bulk tensile strain GaAs1-xPx material, the situation may be different from the tensile strain GaAs1-xPx quantum well, in which the first light hole subband lh1 can be either on the top of the first heavy hole subband hh1 or reversed, that will cause the laser to generate either TM or transverse electric (TE) polarized light according to the well structure. So it is meaningful to optimize the tensile strain GaAs1-xPx quantum well structure based on the analysis of the energy band structure. Firstly, according to the 6×6 Luttinger-Kohn theory, the energy band structure of the tensile strain GaAs1-xPx quantum well is calculated by the finite difference method. The relationship between the interband transition energy and the well structure parameters is established. It is found that the well composition x and the well width should increase simultaneously, in order to fix the first subband transition wavelength at about 800 nm. Special attention is paid to the 808 nm quantum well, the valence structures of different well widths are calculated, the detailed analysis of the envelope function shows that the top valence subband is lh1 for wider well width, while it is changed to hh1 for narrower well width. Meanwhile, both the TE and the TM momentum matrix element are calculated as a function of the transverse wave vector for the subband transition from c1 to lh1, lh2, hh1 and hh2, respectively. Further, the threshold optical gains of different well widths are simulated for 808 nm laser diode with the tensile strain GaAs1-xPx quantum well as an active region, the wider well width benefits the TM mode, while the narrower one is favor of TE mode. Finally, according to the threshold carrier density, the relationship between the threshold current density and the well width is analyzed for 808 nm laser diode by considering both the spontaneous and the Auger recombination, an optimum combination of the well width and the well composition exists. For wider well width, the threshold current density will be higher because of the high energy subband carrier filling effect. For narrower well width, the decrease of the optical confinement factor will lead to the increase of threshold current density.

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High-power, high-efficiency 808 nm laser diode array

Cited by 3 publications

References 7 publications

Research on the fabrication of high-power semiconductor lasers by impurity-free vacancy disordering

Research on the fabrication of high-power semiconductor lasers by impurity-free vacancy disordering

Efficiency analysis of 808 nm laser diode array under different operating temperatures

Design of active region for GaAsP/AlGaAs tensile strain quantum well laser diodes near 800 nm wavelength

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