High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

Dogmus, Ezgi; Kabouche, Riad; Linge, Astrid; Okada, Étienne; Zégaoui, M.; Medjdoub, Farid

doi:10.1002/pssa.201600797

Cited by 14 publications

(8 citation statements)

References 12 publications

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“…Currently, the most matured GaN HEMTs are based on a AlGaN/GaN heterostructure [ 6 , 7 , 8 , 9 , 10 ]. More recently, Al-rich ultrathin sub-10 nm barrier heterostructures have received much attention for millimeter-wave applications [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. This is because they can deliver significantly higher 2DEG sheet carrier density compared to AlGaN/GaN HEMTs while offering the possibility to highly scale the epitaxial structure as needed when using short gate lengths [ 23 , 24 , 25 ].…”

Section: Introductionmentioning

confidence: 99%

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

et al. 2023

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In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current under a high electric field while using a moderate carbon concentration into the buffer. By carefully tuning the Al concentration into the back barrier layer, the optimized heterostructure offers a unique combination of electron confinement and low trapping effects up to high drain bias for a gate length as short as 100 nm. Consequently, pulsed (CW) Load-Pull measurements at 40 GHz revealed outstanding performances with a record power-added efficiency of 70% (66%) under high output power density at VDS = 20 V. These results demonstrate the interest of this approach for future millimeter-wave applications.

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Section: Introductionmentioning

confidence: 99%

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

et al. 2023

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“…Other groups have also shown promising results from AlN‐based devices, including HEMTs on AlN substrates, demonstrating 15 W mm −1 at X‐band [ 7 ] and AlN buffer breakdown of 5 MV cm −1 . [ 8 ] HEMTs using an AlN top barrier have been demonstrated, including the GaN HEMT record

f_{normalT} / f_{max}

of 454/444 GHz, [ 9–11 ] a W‐band power amplifier with 27% PAE and associate output power of 1.3 W, [ 12 ] a K a ‐band low‐noise amplifier with a noise figure of less than 2, [ 13 ] and 4.5 W mm −1 at 40 GHz, [ 14 ] all on an AlN/GaN/AlGaN heterostructure. AlN/GaN HEMTs have shown record output power for Ga‐polar HEMTs at W‐band, with

P_{out} = 4 {W mm}^{- 1}

at 94 GHz.…”

Section: Introductionmentioning

confidence: 99%

2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC

Hickman

Chaudhuri

et al. 2023

Physica Status Solidi (a)

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Aluminum nitride (AlN) offers novel potential for electronic integration and performance benefits for high‐power, millimeter‐wave amplification. Herein, load‐pull power performance at 30 and 94 GHz for AlN/GaN/AlN high‐electron‐mobility transistors (HEMTs) on silicon carbide (SiC) is reported. When tuned for peak power‐added efficiency (PAE), the reported AlN/GaN/AlN HEMT shows PAE of 25% and 15%, with associated output power () of 2.5 and 1.7 W mm−1, at 30 and 94 GHz, respectively. At 94 GHz, the maximum generated is 2.2 W mm−1, with associated PAE of 13%.

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“…That is why, achieving both high PAE and output power density (P OUT ) in the millimeter-wave (mmW) range represents currently one of the key goal for the GaN technology. High Electron Mobility Transistors (HEMT) on SiC have already demonstrated attractive efficiencies up to Ka-Band [1]- [5] but limited data have been reported so far in the Q-Band [6]- [8] and above [9]- [15]. To obtain very high frequency performance, it is necessary to shrink the device dimensions and wisely optimize the epilayer stack, especially the barrier thickness.…”

Section: Introductionmentioning

confidence: 99%

High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

Harrouche

Kabouche

Okada

et al. 2019

IEEE J. Electron Devices Soc.

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We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below 10 μA/mm, a high breakdown voltage and a F T /F max of 63/300 GHz at a drain voltage of 20V. Despite residual trapping effects, state of the art large signal characteristics at 40 GHz and 94 GHz are achieved. For instance, an outstanding power added efficiency of 65% has been reached at V DS = 10V in pulsed mode at 40 GHz. Also, an output power density of 8.3 W/mm at V DS = 40V is obtained associated to a power added efficiency of 50%. At 94 GHz, a record CW output power density for Ga-polar GaN transistors has been reached with 4 W/mm. Additionally, room temperature preliminary robustness assessment at 40 GHz has been performed at V DS = 20V. 24 hours RF monitoring showed no degradation during and after the test.

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High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

Cited by 14 publications

References 12 publications

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC

High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

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