High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter

Pánkové, J. I.; Leksono, M. W.; Chang, Sun; Walker, Christopher K.; Zeghbroeck, B. Van

doi:10.1557/s1092578300002118

Cited by 30 publications

(12 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3][4][5] The large direct band gap of 3.4 eV, high breakdown voltage with added advantage of high thermal conductivity, and thermal stability of GaN have led to electronic devices that can operate at high temperatures. 6 GaN has also received enormous attention due to its applications in white light sources. 7 Applications in spintronic devices for magnetic sensors, high-density memories, and spin polarized light emitters for optical encoding have been proposed, based on ferromagnetic doping of GaN.…”

Section: Introductionmentioning

confidence: 99%

Growth and structure of sputtered gallium nitride films

Yadav¹,

Major²,

Srinivasa³

2007

Journal of Applied Physics

View full text Add to dashboard Cite

GaN films have been deposited by radio frequency sputtering of a GaAs target with pure nitrogen. The growth, composition, and structure of the films deposited on quartz substrates have been studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films deposited below 300°C are amorphous and As rich. Above 300°C, polycrystalline, hexagonal GaN is formed, along with As rich amorphous phase, which reduces with increasing substrate temperature. At a substrate temperature of 700°C, GaN films, practically free of amorphous phase, and As (<0.5at.%) are formed. The preferred orientation depends strongly on the substrate temperature and is controlled by surface diffusion of adatoms during growth stage. Below 500°C, the surface diffusion between planes dominates and results in the (101¯1) preferred orientation. Above 500°C, the surface diffusion between grains takes over and results in (0002) preferred orientation.

show abstract

Section: Introductionmentioning

confidence: 99%

Growth and structure of sputtered gallium nitride films

Yadav¹,

Major²,

Srinivasa³

2007

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4] GaN-based bipolar junction transistors and heterojunction field effect transistors are another potential application field. 5,6 The need for both n-type and p-type dopants for the realization of practical structures has led to active research to find the most efficient atomic impurities. For wide-gap semiconductors like SiC and GaN, Si is used as shallow n dopant.…”

Section: Introductionmentioning

confidence: 99%

Competition between deep impurity and dopant behavior of Mg in GaN Schottky diodes

Schmeits

Nguyen

Germain

2001

Journal of Applied Physics

View full text Add to dashboard Cite

The effect of the deep acceptor Mg on the electrical characteristics of p-doped GaN Schottky diodes is analyzed. The theoretical study is based on the numerical resolution of the basic semiconductor equations, including the continuity equation for the Mg-related acceptor level. It gives the steady-state and small-signal analysis of p-doped GaN:Mg Schottky diodes, yielding as final result the frequency dependent capacitance and conductance of the structure. It is shown that the low-frequency characteristics are determined by the carrier exchange between the Mg related impurity level and the valence band, whereas above the impurity transition frequency, the hole modulation of the depletion layer edge governs the electrical response. Detailed results are shown on the effect of temperature, applied steady-state voltage and series resistance. The study of two back-to-back connected GaN Schottky diodes reveals the appearance of typical features in the electrical characteristics, depending on the respective Schottky barrier height of the two junctions.

show abstract

“…They estimated that GaN/AlGaN thyristors might support up to 5 kV operating voltages with current densities of 200 A/cm 2 and operate at frequencies exceeding 2 MHz. Pankove et al (1996) reported on a new Heterojunction Bipolar Transistor that used a heterojunction between GaN and SiC. The transistor exhibited an extremely high gain of ten million at room temperature, decreasing to 100 at 535°C.…”

Section: Gan Bipolar Transistorsmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

View full text Add to dashboard Cite

Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

show abstract

High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter

Cited by 30 publications

References 1 publication

Growth and structure of sputtered gallium nitride films

Growth and structure of sputtered gallium nitride films

Competition between deep impurity and dopant behavior of Mg in GaN Schottky diodes

High-Temperature Electronics in Europe

Contact Info

Product

Resources

About