High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers

Choi, H. K.; Wang, C.A.; Kolesar, D.F.; Aggarwal, R. L.; Walpole, J. N.

doi:10.1109/68.93240

Cited by 22 publications

(4 citation statements)

References 7 publications

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“…where C 11 and C 12 are the elastic stiffness constants. To obtain the numerical parameters required for k⋅p calculations for the InGaAlAs materials, a linear interpolation between the parameters of the relevant binary semiconductors is utilized except for the unstrained bandgap energies.…”

Section: Physical Model and Parametersmentioning

confidence: 99%

Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

Kuo

Chen

Jow³

et al. 2006

SPIE Proceedings

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Vertical-cavity surface-emitting lasers with variant compressively strained InGaAlAs quantum wells have been investigated. The valence band structures, optical gain spectra, and threshold properties of InGaAlAs/AlGaAs quantum wells are compared and analyzed. The simulation results indicate that the characteristics of InGaAlAs quantum wells can be improved by increasing the amount of compressive strain in quantum well. Furthermore, the properties of VCSELs with these compressively strained InGaAlAs quantum wells are studied numerically. The results of numerical calculations show that the threshold current and maximum output power can be enhanced by using higher compressively strained InGaAlAs quantum well. However, when the compressive strain is larger than about 1.5%, further improvement of the laser performance becomes minimal. The effects of the position and aperture size of the oxide-confinement layers on the laser performance are also investigated. Variation of the oxide layer design is shown to affect the current distribution which makes the temperature in the active region different. It is the main reason for the power roll-off in the VCSEL devices.

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Section: Physical Model and Parametersmentioning

confidence: 99%

Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

Kuo

Chen

Jow³

et al. 2006

SPIE Proceedings

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“…If the forward current i d ðtÞ is applied, the corresponding light will be generated and strikes on the junction area. The internal light power w ðtÞ proportional to i d ðtÞ (Choi et al 1991) is given by…”

Section: Mathematical Model Of Cds Type Photo-couplermentioning

confidence: 99%

Voltage-controlled isolated linear resistors with wide operation range

Hou

Lin

2005

International Journal of Electronics

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In this paper, cadmium sulfur (CdS) type photo-couplers are employed to achieve the voltage-controlled isolated resistors (VCIRs). The feedback technique is applied to overcome the inherent non-linear characteristics of photo-couplers using current conveyors, and thus a good transient response of VCIRs can be obtained. They can be employed to achieve noise suppression and high voltage isolation since the circuit has no common ground between the input and output terminals. Their resistances are proportional to the controlled voltage and range from 400 to 400 k. The mathematical model is also proposed. Experimental responses and simulation results demonstrate the dynamic and static characteristics of VCIRs.

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“…For VCSEL with 850 nm emission, several methods had been developed to achieve better output performance, including using a strained InGaAsP active region [4][5][6] and shaping the light-emitting aperture to obtain a high-power single-mode operation [7,8]. The use of InGaAs or quaternary InAlGaAs quantum wells (QWs) that provided a reasonable compressive strain level had been found to possess a lower threshold current and higher modulation speed [9][10][11][12]. It was well known that high output power, low threshold current and especially high temperature stability were the major concerns in semiconductor lasers.…”

Section: Introductionmentioning

confidence: 99%

The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers

Chang

Chen

et al. 2006

Semicond. Sci. Technol.

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In this study, the carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting layers (VCSELs) was theoretically and experimentally investigated. By means of inserting a high-bandgap electron blocking layer, which was either 10 nm thick Al 0.75 Ga 0.25 As or 13 nm thick Al 0.9 Ga 0.1 As, on the p-side of a quantum-well active region, the laser output performance was theoretically found to be improved. VCSELs with and without an electron blocking layer were also experimentally demonstrated. It was found that the threshold current was reduced from 1.47 to 1.33 mA and the slope efficiency was increased from 0.37 to 0.53 mW mA −1 by inserting a 10 nm thick Al 0.75 Ga 0.25 As electron blocking layer. Also, the device became less sensitive to the device temperature, where the amount of increase in the threshold current at an elevated temperature of 95 • C was only 0.27 mA and the slope efficiency dropped by only 24.5%. A peak frequency response of nearly 9 GHz at 5 mA, measured from relative intensity noise (RIN), was obtained in these VCSEL devices.

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High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers

Cited by 22 publications

References 7 publications

Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

Voltage-controlled isolated linear resistors with wide operation range

The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers

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