High power impulse magnetron sputtering growth processes for copper nitride thin film and its highly enhanced UV - visible photodetection properties

Sakalley, Shikha; Saravanan, Adhimoorthy; Cheng, Wei-Jen; Chen, Sheng-Chi; Sun, Hui; Hsu, Cheng-Liang; Huang, Bohr–Ran

doi:10.1016/j.jallcom.2021.162924

Cited by 15 publications

(3 citation statements)

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“…On the other hand, the lattice parameters calculated were slightly higher than the theoretical parameters (0.38170 nm). This demonstrates the over-stoichiometry of the film in terms of N content, as other authors have previously reported [ 20 , 37 , 43 ]. With regard to the mean grain size calculated, no clear trend was observed in RF power for the different sample series of gas pressures, with the values being around 27–38 nm, similar to those obtained in the literature [ 9 , 32 , 37 ].…”

Section: Resultssupporting

confidence: 86%

“…On the other hand, the different natures observed in this material can be reached by modifying its deposition conditions and/or depending on the fabrication technique used. The differences in morphological, structural, chemical and optoelectronic properties reported in the literature are attributed to the vacant interstitial sites occupied by atoms other than Cu and the chemical interactions between them [ 20 , 21 , 22 ]. That is why the knowledge of its local atomic structure is of great importance; it permits the determination of the most suitable material that fits the device requirements.…”

Section: Introductionmentioning

confidence: 99%

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Impact of the RF Power on the Copper Nitride Films Deposited in a Pure Nitrogen Environment for Applications as Eco-Friendly Solar Absorber

et al. 2023

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This material can be considered to be an interesting eco-friendly choice to be used in the photovoltaic field. In this work, we present the fabrication of Cu3N thin films by reactive radio-frequency (RF) magnetron sputtering at room temperature, using nitrogen as the process gas. Different RF power values ranged from 25 to 200 W and gas pressures of 3.5 and 5 Pa were tested to determine their impact on the film properties. The morphology and structure were exhaustively examined by Atomic Force Microscopy (AFM), Fourier Transform Infrared (FTIR) and Raman Spectroscopies and X-ray Diffraction (XRD), respectively. The AFM micrographs revealed different morphologies depending on the total pressure used, and rougher surfaces when the films were deposited at the lowest pressure; whereas FTIR and Raman spectra exhibited the characteristics bands related to the Cu-N bonds of Cu3N. Such bands became narrower as the RF power increased. XRD patterns showed the (100) plane as the preferred orientation, that changed to (111) with the RF power, revealing a worsening in structural quality. Finally, the band gap energy was estimated from transmission spectra carried out with a Perkin Elmer 1050 spectrophotometer to evaluate the suitability of Cu3N as a light absorber. The values obtained demonstrated the capability of Cu3N for solar energy conversion applications, indicating a better film performance under the sputtering conditions 5.0 Pa and RF power values ranged from 50 to 100 W.

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Section: Resultssupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Impact of the RF Power on the Copper Nitride Films Deposited in a Pure Nitrogen Environment for Applications as Eco-Friendly Solar Absorber

et al. 2023

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“…These results clearly show the potential of Cu 3 N films deposited through HiPIMS technology to be applied in future optoelectronic devices. This technique helps in obtaining a flatter interface when the multilayer films are coated, which can improve the device performance [50].…”

Section: Discussionmentioning

confidence: 99%

Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering

et al. 2022

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High Power Impulse Magnetron Sputtering (HiPIMS) has generated a great deal of interest by offering significant advantages such as high target ionization rate, high plasma density, and the smooth surface of the sputtered films. This study discusses the deposition of copper nitride thin films via HiPIMS at different deposition pressures and then examines the impact of the deposition pressure on the structural and electrical properties of Cu3N films. At low deposition pressure, Cu-rich Cu3N films were obtained, which results in the n-type semiconductor behavior of the films. When the deposition pressure is increased to above 15 mtorr, Cu3N phase forms, leading to a change in the conductivity type of the film from n-type to p-type. According to our analysis, the Cu3N film deposited at 15 mtorr shows p-type conduction with the lowest resistivity of 0.024 Ω·cm and the highest carrier concentration of 1.43 × 1020 cm−3. Furthermore, compared to the properties of Cu3N films deposited via conventional direct current magnetron sputtering (DCMS), the films deposited via HiPIMS show better conductivity due to the higher ionization rate of HiPIMS. These results enhance the potential of Cu3N films’ use in smart futuristic devices such as photodetection, photovoltaic absorbers, lithium-ion batteries, etc.

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Self‐Powered Broadband Photodetectors Based on Si/SnS₂ and Si/SnSe₂ p–n Heterostructures

Kumar,

Huang,

Saravanan

et al. 2024

Adv Elect Materials

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The escalating interest in 2D nanoflakes‐based group‐IVA metal chalcogenides is attributed to their noteworthy properties, such as high electron mobility, exceptional chemical stability, and applicability across diverse scientific disciplines such as sensing, energy storage applications, supercapacitors, and lithium‐ion batteries. This study introduces an innovative self‐powered photodetector based on 2D metal chalcogenide nanoflakes (SnS2 and SnSe2) formed into nanoflowers on a silicon substrate through the hydrothermal method. The amalgamation of the light‐induced pyroelectric effect into the SnS2 photodetector achieves impressive enhancement ratios of 353%, 425%, 351%, 662%, and 153% in photoresponsivity and detectivity compared to the photovoltaic effect at 365, 456, 532, 632, and 850 nm, respectively, at zero bias. The SnSe2 photodetector achieved responsivity values of 14, 82, 36, 4, and 28 mA W−1 at the corresponding wavelengths in self‐powered mode. The SnSe2 device exhibits superior photosensitivity of 30792%, 55692%, 28803%, 9678%, and 68587% at the corresponding wavelengths, under zero bias. In addition, the photocurrent response caused by the photovoltaic‐pyroelectric effect is thoroughly defined, and the impacts of light wavelength, power intensity, and bias voltage are studied. This study presents a cutting‐edge self‐powered broadband photodetector utilizing pyroelectric materials and opens possibilities for designing high‐performance, fast photodetectors based on the pyro‐phototronic effect.

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High power impulse magnetron sputtering growth processes for copper nitride thin film and its highly enhanced UV - visible photodetection properties

Cited by 15 publications

References 50 publications

Impact of the RF Power on the Copper Nitride Films Deposited in a Pure Nitrogen Environment for Applications as Eco-Friendly Solar Absorber

Impact of the RF Power on the Copper Nitride Films Deposited in a Pure Nitrogen Environment for Applications as Eco-Friendly Solar Absorber

Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering

Self‐Powered Broadband Photodetectors Based on Si/SnS₂ and Si/SnSe₂ p–n Heterostructures

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High power impulse magnetron sputtering growth processes for copper nitride thin film and its highly enhanced UV - visible photodetection properties

Cited by 15 publications

References 50 publications

Impact of the RF Power on the Copper Nitride Films Deposited in a Pure Nitrogen Environment for Applications as Eco-Friendly Solar Absorber

Impact of the RF Power on the Copper Nitride Films Deposited in a Pure Nitrogen Environment for Applications as Eco-Friendly Solar Absorber

Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering

Self‐Powered Broadband Photodetectors Based on Si/SnS2 and Si/SnSe2 p–n Heterostructures

Contact Info

Product

Resources

About

Self‐Powered Broadband Photodetectors Based on Si/SnS₂ and Si/SnSe₂ p–n Heterostructures