High-power InGaAs/GaAsP strained quantum well vertical-cavity surface-emitting laser array

Di, 刘迪 Liu; Yongqiang, 宁永强 Ning; Jinlong, 张金龙 Zhang; Xing, 张星 Zhang; Lijun, 王立军 Wang

doi:10.3788/ope.20122010.2147

光学精密工程

2012

DOI: 10.3788/ope.20122010.2147

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High-power InGaAs/GaAsP strained quantum well vertical-cavity surface-emitting laser array

刘迪 Liu Di¹,

宁永强 Ning Yongqiang²,

张金龙 Zhang Jinlong³

et al.

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Theory study on the bandgap of antimonide-based multi-element alloys

Liu

Fan

et al. 2017

Int. J. Mod. Phys. B

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In order to meet the design requirements of the high-performance antimonide-based optoelectronic devices, the spin–orbit splitting correction method for bandgaps of Sb-based multi-element alloys is proposed. Based on the analysis of band structure, a correction factor is introduced in the In[Formula: see text]Ga[Formula: see text]As[Formula: see text]Sb[Formula: see text] bandgaps calculation with taking into account the spin–orbit coupling sufficiently. In addition, the In[Formula: see text]Ga[Formula: see text]As[Formula: see text]Sb[Formula: see text] films with different compositions are grown on GaSb substrates by molecular beam epitaxy (MBE), and the corresponding bandgaps are obtained by photoluminescence (PL) to test the accuracy and reliability of this new method. The results show that the calculated values agree fairly well with the experimental results. To further verify this new method, the bandgaps of a series of experimental samples reported before are calculated. The error rate analysis reveals that the [Formula: see text] of spin–orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the common method. It means this new method can calculate the antimonide multi-element more accurately and has the merit of wide applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.

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Theory study on the bandgap of antimonide-based multi-element alloys

Liu

Fan

et al. 2017

Int. J. Mod. Phys. B

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Calculation Method for the Bandgap of Antimonide Based Multicomponent Alloys

Liu

Fan

et al. 2018

Acta Phys. Pol. A

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As the most important material parameter of semiconductor, bandgap is necessary to be investigated to meet the design requirements of the high-performance optoelectronic devices. A new method of is proposed to calibrate the bandgap of antimonide based multi-component alloys with considering the effect of spin-orbit splitting off bands and the doublet degeneracy of valance band on the bandgaps of Sb-containing materials. A correction factor is introduced in the conventional calculation, and the spin-orbit splitting method is proposed. Besides, the InxGa1−xAsySb1−y films with different compositions are grown on GaSb substrates by molecular beam epitaxy, and the corresponding bandgaps are obtained by photoluminescence to test the accuracy and reliability of this new method. An error rate analysis reveals that the α calculated by the spin-orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the Moon method, which means that the new method can calculate the antimonide multicomponent more accurately with some applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.

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High-power InGaAs/GaAsP strained quantum well vertical-cavity surface-emitting laser array

Cited by 2 publications

References 0 publications

Theory study on the bandgap of antimonide-based multi-element alloys

Theory study on the bandgap of antimonide-based multi-element alloys

Calculation Method for the Bandgap of Antimonide Based Multicomponent Alloys

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