High-Power Low Vertical Beam Divergence 800-nm-Band Double-Barrier-SCH GaAsP&amp;#8211;(AlGa)As Laser Diodes

Maląg, A.; Jasik, A.; Teodorczyk, M.; Jagoda, A.; Kozłowska, Anna

doi:10.1109/lpt.2006.878142

Cited by 24 publications

(11 citation statements)

References 12 publications

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“…The following study reports on mechanisms of facet heating in HPSL by comparing the facet temperature distributions for fresh (undamaged) and degraded laser. Investigated laser diodes were the broad-area devices based on doublebarrier separate confinement heterostructure (DBSCH SQW) designed for 808 nm emission wavelength, grown by MOCVD [106]. Figure 11 shows Al content and (Zn, Si) doping profiles (black solid and dotted lines, respectively) for (DBSCH SQW) structure together with calculated optical field intensity TM 0 profile (I-gray solid line).…”

Section: Facet Heating Mechanisms In High Power Semiconductormentioning

confidence: 99%

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Pierścińska

2017

J. Phys. D: Appl. Phys.

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This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

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Section: Facet Heating Mechanisms In High Power Semiconductormentioning

confidence: 99%

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Pierścińska

2017

J. Phys. D: Appl. Phys.

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“…Diode lasers with narrow vertical far fields have been studied for many years by many groups, and various design schemes are possible (see [25][26][27][28] and references within). Currently, most high power, high-efficiency GaAs-based diode lasers make use of large optical cavity (LOC) vertical waveguide designs, with a waveguide thickness of around 1 µm, with quantum wells providing the optical gain.…”

Section: Design Approach For Simultaneous High Efficiency and Narrow mentioning

confidence: 99%

“…Various techniques can be used to compensate for this, for example by coupling to additional vertical waveguides or by using optical trap layers (see Refs. [28][29][30] and references within). However, these approaches add complexity, increase overall thickness and add hetero-junctions, typically degrading η E .…”

Section: Design Approach For Simultaneous High Efficiency and Narrow mentioning

confidence: 99%

Low-loss smile-insensitive external frequency-stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high efficiency

et al. 2013

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Broad area lasers with narrow spectra are required for many pumping applications and for wavelength beam combination. Although monolithically stabilized lasers show high performance, some applications can only be addressed with external frequency stabilization, for example when very narrow spectra are required. When conventional diode lasers with vertical far field angle, Θ V 95% ~ 45° (95% power) are stabilized using volume holographic gratings (VHGs), optical losses are introduced, limiting both efficiency and reliable output power, with the presence of any bar smile compounding the challenge. Diode lasers with designs optimized for extremely low vertical divergence (ELOD lasers) directly address these challenges. The vertical far field angle in conventional laser designs is limited by the waveguiding of the active region itself. In ELOD designs, quantum barriers are used that have low refractive index, enabling the influence of the active region to be suppressed, leading to narrow far field operation from thin vertical structures, for minimal electrical resistance and maximum power conversion efficiency. We review the design process, and show that 975 nm diode lasers with 90 µm stripes that use ELOD designs operate with Θ V 95% = 26° and reach 58% power conversion efficiency at a CW output power of 10 W. We demonstrate directly that VHG stabilized ELOD lasers have significantly lower loss and larger operation windows than conventional lasers in the collimated feedback regimes, even in the presence of significant (≥ 1 µm) bar smile. We also discuss the potential influence of ELOD designs on reliable output power and options for further performance improvement.

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“…6,7 Detailed investigations showed that apart from the carrier leakage, a tensile-strain-induced band edge modification ͑assuring light-hole-up configuration of the valence band͒ adversely influences the thermal behavior of these devices. 9 Actually, although the T 0 values of these devices are somewhat higher than those of LOC LDs of similar beam divergences, they still remain relatively low for devices of the lowest vertical beam divergences ͑⌰ Ќ ͒: interesting from an application viewpoint LDs of ⌰ Ќ Ͻ 15°͑full width at half maximum͒ have values not exceeding 80 K. 9 The aim of this work is to explain this tendency of T 0 decrease in DBSCH LDs of narrowed ⌰ Ќ . 9 Actually, although the T 0 values of these devices are somewhat higher than those of LOC LDs of similar beam divergences, they still remain relatively low for devices of the lowest vertical beam divergences ͑⌰ Ќ ͒: interesting from an application viewpoint LDs of ⌰ Ќ Ͻ 15°͑full width at half maximum͒ have values not exceeding 80 K. 9 The aim of this work is to explain this tendency of T 0 decrease in DBSCH LDs of narrowed ⌰ Ќ .…”

Section: Introductionmentioning

confidence: 99%

Temperature sensitivity (T) of tensile-strained GaAsP/(AlGa)As double-barrier separate confinement heterostructure laser diodes for 800 nm band

Maląg¹,

Dąbrowska²,

Grodecki³

2008

Journal of Applied Physics

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High-Power Low Vertical Beam Divergence 800-nm-Band Double-Barrier-SCH GaAsP–(AlGa)As Laser Diodes

Cited by 24 publications

References 12 publications

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Low-loss smile-insensitive external frequency-stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high efficiency

Temperature sensitivity (T) of tensile-strained GaAsP/(AlGa)As double-barrier separate confinement heterostructure laser diodes for 800 nm band

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