High-Power Modular Multilevel Converters With SiC JFETs

Peftitsis, Dimosthenis; Tolstoy, Georg; Antonopoulos, Antonios; Rąbkowski, Jacek; Lim, Jang‐Kwon; Bakowski, Mietek; Ängquist, Lennart; Nee, Hans‐Peter

doi:10.1109/tpel.2011.2155671

Cited by 140 publications

(40 citation statements)

References 27 publications

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“…This warrants the purchase of a supply transformer for base drive circuit [41], [42]. Moreover, the authors in [9] reported dc/dc converters made of SiC JFET and SiC MOSFET with the former possessing a slightly higher efficiency of 96% as against the 95.5% of the latter, with weak frequency dependency.…”

Section: Sic Jfet Application In Inverter and Boost Converter Circuitmentioning

confidence: 99%

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Ehiagwina

Kehinde

Afolabi

et al. 2016

IJATES

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Abstract-properties of Silicon Carbide Junction Field EffectTransistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si). A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

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Section: Sic Jfet Application In Inverter and Boost Converter Circuitmentioning

confidence: 99%

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Ehiagwina

Kehinde

Afolabi

et al. 2016

IJATES

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“…In particular, HV SiC power semiconductors will enable significantly higher efficiencies when employed in high-power electronic converters for HV direct current (HVDC) transmission systems. The modular multilevel converter counts as an example, where efficiencies well-above 99.8% are expected using HV SiC junction-field-effect transistors (JFETs) [7]. The expansion of distributed electric power generation, either onshore or offshore, has resulted in the investigation of more flexible and efficient medium voltage (MV) distribution grids [8].…”

Section: Introductionmentioning

confidence: 99%

Experimental study on fast-switching series-connected SiC MOSFETs

Kopacz

Peftitsis

Rąbkowski

2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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This paper presents an experimental study on series-connection of Silicon Carbide MOSFETs. The switching performance of two series-connected SiC MOSFETs rated at 1200 V and having on-state resistances of 80 mΩ was tested using a double-pulse test circuit at blocking voltages up to 1 kV DC and currents up to 50 A. The design and experimental validation of a suitable double-pulse test setup and gate drive circuits are also shown. Moreover, the impact of additional DRC snubbers ensuring an equal voltage sharing among the series-connected transistors is also investigated.

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“…Previous work has been reported in [3] to [7] comparing the performance of SiC over Si devices in multilevel topologies. In [3] and [7] a modular multilevel converter comparison simulation study was undertaken to evaluate the performance of Si IGBT and diode over SiC MOSFET and SiC JFET respectively.…”

Section: Introductionmentioning

confidence: 99%

“…In [3] and [7] a modular multilevel converter comparison simulation study was undertaken to evaluate the performance of Si IGBT and diode over SiC MOSFET and SiC JFET respectively. In reference [4] a study comparing the efficiency and operating temperatures of a medium power 3-level switched neutral point converter was undertaken by replacing the Si IGBT and Si antiparallel diode with their SiC counterparts.…”

Section: Introductionmentioning

confidence: 99%

Performance evaluation of SiC MOSFET in 5-level single phase converter

Gomez-Palomino

Foster

Stone

2016

8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)

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The use of silicon carbide (SiC) semiconductor power devices has been studied and evaluated in a wide variety of converters. The work presented in this paper shows the performance of C2M SiC MOSFETs compared to Si devices operating as switching elements in a 5-level, single phase, multilevel converter. The paper describes the multilevel converter platform used to undertake the evaluation study and experimental results for the operating temperature of the MOSFETs, and conversion efficiency are shown for frequencies ranging from 20 kHz to 80 kHz. Finally, a discussion of the results obtained to highlight the differences in the performance of the Si and SiC devices and the feasibility of using SiC in MLC.

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High-Power Modular Multilevel Converters With SiC JFETs

Cited by 140 publications

References 27 publications

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Experimental study on fast-switching series-connected SiC MOSFETs

Performance evaluation of SiC MOSFET in 5-level single phase converter

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