High-Power Nanosecond Pulse Generator With High-Voltage SRD and GDT Switch

Nikoo, Mohammad Samizadeh; Hashemi, Seyed Morad Ali

doi:10.1109/tps.2015.2411251

Cited by 11 publications

(4 citation statements)

References 17 publications

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“…The negative part of the bipolar signal biases the diode D in the ON state. When the input signal turns positive, the diode D does not immediately block the signal, because of the minority carriers stored in the junction [18]. When the charges are removed, the diode interrupts the current which initiates a resonance between inductor L and the capacitance of the diode D, leading to the generation of impulse signals.…”

Section: Experiments and Resultsmentioning

confidence: 99%

Kilowatt-Range Picosecond Switching Based on Microplasma Devices

Nikoo

Jafari

Erp

et al. 2021

IEEE Electron Device Lett.

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Plasma formation in micro-and nano-scales enables an ultrahigh-dv/dt picosecond switching in an integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving highpower levels at very high frequencies, far surpassing the best performance of conventional III-V electronics. In this work, we demonstrate the application of scaled-up nanoand microplasma switches as discrete devices in highperformance picosecond pulsed-power sources. A prototype circuit, utilizing the fabricated plasma devices operating as the switch, shows a high voltage-rising-rate beyond 10 kV ns −1 at 15 kW peak power. The pulsed-power source exhibits a sub-100 ps rise-time (without deembedding). The device has the capability of reaching exceptionally high current densities up to 325 A mm −1 . The switches are compatible with planar semiconductor fabrication, enabling their integration with other electronic devices and microwave components, which opens pathways towards the future ultrahigh power density picosecond pulsed-power sources.

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Section: Experiments and Resultsmentioning

confidence: 99%

Kilowatt-Range Picosecond Switching Based on Microplasma Devices

Nikoo

Jafari

Erp

et al. 2021

IEEE Electron Device Lett.

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“…These limitations have driven the development of semiconductor opening switches, such as drift step recovery diodes (DSRD) or the other devices with similar characteristics. These devices exhibit high current density, high operating voltage, and short current cutoff time [80]- [84]. The primary mechanism behind their operation involves carrier accumulation through forward current and extraction through reverse current.…”

Section: Semiconductor Opening Switch-based Circuitmentioning

confidence: 99%

Comprehensive Overview of Power Electronics Intensive Solutions for High-Voltage Pulse Generators

Zhuge,

Liang,

et al. 2024

IEEE Open J. Power Electron.

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With the advancements in power semiconductors and converters, power electronics based high-voltage pulse generators (HVPG) have emerged due to their advantages of high repetition rate, flexible control, long lifetime, and compact size. However, there is a lack of comprehensive literature review on recent advances in power electronics intensive HVPG technologies. To fill this gap, we present a systematic review on HVPGs. First, HVPGs are classified into different types based on their mechanisms. Each type along with its basic circuits and modifications are introduced. Then, the characteristics, advantages, and disadvantages of these topologies are summarized. Furthermore, the potential applications of HVPGs are explored. The performance of pulse generators mentioned in the literature and commercial products is listed. Finally, future trends and technical challenges in HVPG design and development are discussed. This paper provides a clear understanding of HVPGs and the inspiration of topologies developments to meet the specific requirements. Current state and potential future directions are discussed and summarized to facilitate evolvements in HVPG technology.INDEX TERMS Pulsed power supply, high voltage, pulse generator, power electronics.

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“…3. Schematic of the PIN diode tuneable pulse generator [12] the width of the pulse [12]. The circuit diagram for this tuneable pulse generator is given in Fig.…”

Section: Uwb Pulse Generation Strategymentioning

confidence: 99%

“…300 ps pulse width with -17dB ringing level [11] Step recovery diode and transmission line 800 ps pulse width [12] Step recovery diode, gate discharge tube 1ns pulse width with 5.7 Mw of output power [13] Carrier based UWB generation, CMOS 1.5-2.5 ns pulse width [14] Digital logic circuit 75 ps pulse width [15] Avalanche transistor 2 ns pulse width [16] FPGA base GPU 1ns narrow pulse width for Ultrawideband technology [17] 0.18 µm CMOS technology peak-to-peak amplitude of the pulse is 673 mv and the duration is 500ps.…”

Section: Uwb Pulse Generation Strategymentioning

confidence: 99%

International Journal of Electronics and Telecommunications

Kumar,

Singh

et al. 2021

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High-Power Nanosecond Pulse Generator With High-Voltage SRD and GDT Switch

Cited by 11 publications

References 17 publications

Kilowatt-Range Picosecond Switching Based on Microplasma Devices

Kilowatt-Range Picosecond Switching Based on Microplasma Devices

Comprehensive Overview of Power Electronics Intensive Solutions for High-Voltage Pulse Generators

International Journal of Electronics and Telecommunications

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