High-power P-i-N diode with the local lifetime control based on the proximity gettering of platinum

Vobecký, J.; Hazdra, P.

doi:10.1109/led.2002.1015210

Cited by 25 publications

(13 citation statements)

References 4 publications

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“…The acceptor level of substitutional platinum located at Ec -0.243 eV enables minority-carrier lifetime reduction at low leakage currents [1]. For a thorough understanding and an optimization of the processing conditions, an accurate description of the profiles after a series of thermal treatments by numerical simulation is required.…”

Section: Introductionmentioning

confidence: 99%

Extended model for platinum diffusion in silicon

Badr

Pichler

Schmidt

2013

Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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Close to the wafer surfaces, our platinum diffusion experiments were found to be at gross discrepancy with the predictions of well-established diffusion models. These differences are associated with the ramping-down of the temperature at the end of the diffusion processes. To obtain a consistent model able to explain the experiments reported previously in the literature together with our experiments, energy barriers had to be included for the various reactions rate. For the Frank-Turnbull, kick-out and bulk recombination reactions, barrier heights of 0.55, 0.16, and 0.57 eV were determined, respectively. The newly established model is able to reproduce platinum diffusion for a considerably wider range of experimental conditions than models before

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Section: Introductionmentioning

confidence: 99%

Extended model for platinum diffusion in silicon

Badr

Pichler

Schmidt

2013

Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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“…Behavior of platinum (Pt) atoms in silicon still attracts significant interest since platinum is widely used in semiconductor technology. In silicon power electronics, the platinum in-diffusion is often employed for reduction of carrier lifetime since the acceptor level of substitutional platinum Pt s -/0 behaves as an ideal recombination centre [1]. Due to increasing demands on the lifetime controllability, the platinum in diffusion is also combined with another lifetime killing technique: introduction of radiation defects by irradiation with light particles (electrons, protons and alphas).…”

Section: Introductionmentioning

confidence: 99%

Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms

Hazdra

Komarnitskyy

2009

SSP

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The influence of platinum contamination on the stability of radiation defects produced by high-energy proton irradiation was investigated in the low-doped n-type float-zone oxygen rich silicon forming the base of power p+nn+ diodes. Platinum was first implanted and then in-diffused at different temperatures to obtain different levels of contamination. Diodes were then implanted with 1.8 MeV protons to a fluence of 2x1010 cm-2 and radiation defect reaction during isochronal annealing were investigated by deep-level transient spectroscopy. Results show that contamination of silicon by platinum atoms influences significantly both the introduction rates and the temperature stability of dominant radiation defects (vacancy-oxygen pairs, divacancies and VOH complexes).

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“…One of the biggest subjects in these diodes is reducing the recovery time without increasing the forward voltage drop. To decrease the recovery time, the lifetime control is often applied to diodes, [3,4] However, in this technique, it is difficult to control the lifetime reduction with the diffusion of lifetime killer such as Au or Pt, or the irradiation of high-energy electrons in the fabrication. [5] If the lifetime control affects the base region by the over diffusion or irradiation, then the conductivity modulation disappears and the forward voltage drop severely increases.…”

Section: Introductionmentioning

confidence: 99%

Research on reverse recovery characteristics of SiGeC p-i-n diodes

2008

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This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on hetero-junction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

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High-power P-i-N diode with the local lifetime control based on the proximity gettering of platinum

Cited by 25 publications

References 4 publications

Extended model for platinum diffusion in silicon

Extended model for platinum diffusion in silicon

Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms

Research on reverse recovery characteristics of SiGeC p-i-n diodes

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