High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB

Yu, Xinxin; Zhou, Jianjun; Kong, Yuechan; Peng, Daqing; Wang, Weibo; Guo, Fei; Lu, Haijun; Wang, Wen; Kong, Cen; Li, Zhonghui; Chen, Tangsheng

doi:10.1109/edssc.2016.7785226

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) 2016

DOI: 10.1109/edssc.2016.7785226

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High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB

Xinxin Yu¹,

Jianjun Zhou²,

Yuechan Kong³

et al.

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Cited by 3 publications

(2 citation statements)

References 12 publications

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“…The thermal reflow process is capable of defining 150-nm patterns without increasing the process complexity. Several authors reported GaN-HEMTs fabricated using EB lithography and the thermal reflow process [7][8][9]. Recently, the authors reported a 150-nm GaN-HEMT process using the thermal reflow technique combined with the i-line stepper lithography [10].…”

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confidence: 99%

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

Ando

Takahashi

Makisako

et al. 2023

Electronics Letters

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This article reports radio frequency characteristics of 150-nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i-line stepper lithography and a thermal reflow technique. The authors have developed two different gate structures that were a field-plated gate using the lift-off process and a Y-shaped gate using the ion-milling process. Fabricated HEMTs using these different gate structures exhibited nearly equivalent DC characteristics. The field-plated gate device showed a unity current gain cutoff frequency (f T ) of 35 GHz and a maximum oscillation frequency (f max ) of 106 GHz, while the Y-shaped gate device showed f T of 36 GHz and f max of 115 GHz. The equivalent circuit analysis indicated a decrease in the gate-drain capacitance and the drain conductance is responsible for the improved f max in the Y-shaped gate device.

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mentioning

confidence: 99%

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

Ando

Takahashi

Makisako

et al. 2023

Electronics Letters

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“…The thermal reflow process is capable of defining 150 nm patterns without increasing the process complexity. Recently, several authors reported GaN-HEMTs fabricated using EB lithography and the thermal reflow process [5][6][7]. However, there was hardly any report on GaN-HEMTs using the thermal reflow process combined with the photolithography.…”

mentioning

confidence: 99%

Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i ‐line stepper

Ando

Makisako

Takahashi

et al. 2021

Electronics Letters

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This article reports a high throughput 150-nm-gate AlGaN/GaN high electron mobility transistor (HEMT) process using i-line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150-nm gate structure was successfully realized with the initial resist opening of 0.7 μm. AlGaN/GaN fieldplated HEMTs were fabricated on a semi-insulating SiC substrate by using this process. In spite of unoptimized structures, fabricated 150nm gate devices exhibited the maximum drain current of 0.65 A/mm and the gate-drain breakdown voltage exceeding 200 V. Based on cold HEMT extraction measurements, the average gate length of 187 nm and the standard deviation of 30 nm were obtained on a quarter 4-in. wafer.

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Research on GaN-Based RF Devices: High-Frequency Gate Structure Design, Submicrometer-Length Gate Fabrication, Suppressed SCE, Low Parasitic Resistance, Minimized Current Collapse, and Lower Gate Leakage

Yang

2021

IEEE Microwave

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High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB

Cited by 3 publications

References 12 publications

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i ‐line stepper

Research on GaN-Based RF Devices: High-Frequency Gate Structure Design, Submicrometer-Length Gate Fabrication, Suppressed SCE, Low Parasitic Resistance, Minimized Current Collapse, and Lower Gate Leakage

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