High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime

Moe, Craig G.; Grandusky, James R.; Chen, Jianfeng; Kitamura, Ken; Mendrick, Mark C.; Jamil, Muhammad; Toita, Masato; Gibb, Shawn R.; Schowalter, L. J.

doi:10.1117/12.2037856

Cited by 8 publications

(7 citation statements)

References 8 publications

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“…Improvement of device performance through pseudomorphic growth has also been demonstrated by several groups [3,10,88]. A high IQE value of~80% at a photo-generated carrier density of 10 18 cm −3 was achieved in UVC MQW structures emitting at~258 nm, which were pseudomorphically grown on bulk AlN substrates that contain less than 10 3 cm −2 dislocations [46], as revealed by synchrotron white-beam X-ray topography [94].…”

Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 97%

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Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

et al. 2017

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 97%

“…Pseudomorphic LEDs also show improved lifetimes and reliability. LEDs of 266 nm tested, in both surface mount design and TO-39 package, showed lifetimes above 1000 h under a variety of case temperatures and currents using performance degradation of 50% as the marker [10].…”

Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

et al. 2017

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“…[3,10,84] A high IQE value of ~80% at a photo-generated carrier density of 10 18 cm -3 was achieved in UVC MQW structures emitting at ~258 nm, which were pseudomorphically grown on bulk AlN substrates that contain less than 10 3 cm -2 dislocations, [43] as revealed by synchrotron white-beam X-ray topography. [90] In an encapsulated pseudomorphic LED structure with improved LEE, through thinned AlN substrate, an output power of over 60mW and an EQE of 4.9% have been realized in continuous wave operation.…”

Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 99%

“…Reported external quantum efficiencies (EQE) for group III-nitrides-based near and deep UV LEDs. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] In part courtesy of Prof. M. Kneissl of Technische Universität Berlin.…”

Section: Current Status and Challenges Of Group Iii-nitrde Duv Ledsmentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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“…Pero algunos autores que han realizado ensayos a LEDs de ultravioleta profundo han considerado degradaciones mayores para estimar en fallo, en concreto el 50% de degradación [CAFB+04] [SGGW+06] [MGCK+14] [SJDB+15], esto da idea de que los ensayos acelerados no dieron esperanzas de vida altas a la degradación del 30% Una vez se obtengan todos los resultados para cada una de las temperaturas, con la salvedad de que dichos resultados variarán según el nivel de degradación que se consideren fallo, se aplicará el modelo de Arrhenius a los resultados. Para ello se empleará la herramienta ALTA (Accelerated Life Test Analysis) de Reliasoft que ofrecerá los valores más probables de cada parámetro de la fiabilidad y esperanza de vida para la temperatura nominal de trabajo, indicando si los ensayos siguen el modelo de Arrhenius.…”

Section: Planificaciónunclassified

Validación de HP UV-LED para la detección en continuo de contaminantes en aguas continentales mediante fluorescencia

Orobón¹,

Francisco²

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High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime

Cited by 8 publications

References 8 publications

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Validación de HP UV-LED para la detección en continuo de contaminantes en aguas continentales mediante fluorescencia

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