High-Power Quantum-Dot Superluminescent LED With Broadband Drive Current Insensitive Emission Spectra Using a Tapered Active Region

Zhang, Z.Y.; Hogg, R. A.; Jin, Peng; Choi, Tom; Xu, Bin; Wang, Z.G.

doi:10.1109/lpt.2008.921108

Cited by 28 publications

(12 citation statements)

References 14 publications

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“…Since the first proposal by Sun et al, 8) the QDbased broadband light source, in particular, the electrically driven superluminescent diode (SLD), has been intensively studied. [8][9][10][11][12][13][14][15][16][17][18][19] The SLD emits light with a lower coherence than that of a laser diode and higher output power than that of a light-emitting diode.…”

Section: Introductionmentioning

confidence: 99%

Imaging of spectral-domain optical coherence tomography using a superluminescent diode based on InAs quantum dots emitting broadband spectrum with Gaussian-like shape

Shibata

Ozaki

Yasuda

et al. 2015

Jpn. J. Appl. Phys.

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We developed a low-coherence light source based on self-assembled InAs quantum dots (QDs) with controlled emission wavelengths and applied it to optical coherence tomography (OCT) imaging. A current-driven superluminescent diode (SLD) light source including four layers of QDs exhibits a broadband (80-nm-bandwidth) emission centered at approximately 1.2 µm with a Gaussian-like spectral shape at room temperature. Spectral-domain OCT (SD-OCT) using the QD-SLD as a light source was developed and imaging with the SD-OCT was demonstrated. The axial resolution was estimated to be approximately 8 µm in air and no apparent side lobes appeared beside the point spread function, indicating the effectiveness of the QD-SLD for high-resolution, noise-reduced OCT imaging.

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Section: Introductionmentioning

confidence: 99%

Imaging of spectral-domain optical coherence tomography using a superluminescent diode based on InAs quantum dots emitting broadband spectrum with Gaussian-like shape

Shibata

Ozaki

Yasuda

et al. 2015

Jpn. J. Appl. Phys.

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“…Since the remaining power can couple back into the waveguide, zero reflection cannot be achieved. 6) Fabricating a multisection device with absorber sections [87]. The simple principle of this device is to avoid the round trip amplification responsible for Fabry Perot lasing.…”

Section: Sld Devicesmentioning

confidence: 99%

“…For all these designs, a tapered waveguide at the output facet can also be used to obtain higher output powers when simply increasing the chip length is not possible. However, for large taper sizes, this power increase comes at the expense of fiber coupling efficiency [87], which is not ideal since most OCT systems are fiber based. Another crucial factor for the fabrication of a QD-SLD is the etch depth of the waveguides.…”

Section: Sld Devicesmentioning

confidence: 99%

QD Ultrafast and Continuous Wavelength Laser Diodes for Applications in Biology and Medicine

Loza-Álvarez

Aviles-Espinosa

Matcher

et al. 2014

The Physics and Engineering of Compact Quantum Dot‐based Lasers for Biophotonics

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“…In the past years, various emitting wavelengths at 0.4 µm GaN‐based, 0.8–1.2 µm GaAs‐based, and 1.3–1.6 µm InP‐based SLDs have been reported. In general, SLDs have an inherent problem, however, in that the optical output powers differ greatly between the transverse‐electric polarized (TE, in which the electric field component is perpendicular to the direction of the layer growth) and transverse‐magnetic polarized (TM, in which the electric field component is parallel to the direction of the layer growth) modes.…”

Section: Introductionmentioning

confidence: 99%

Superluminescent Diode at 0.8-µm with a GaAsP/AlGaAs Tensile-Strained Quantum Well

Zhou¹,

Tang²,

Liu³

et al. 2018

Phys. Status Solidi A

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High‐power and low‐polarization superluminescent diodes emitting at 0.8‐µm are fabricated by using a tensile‐strained GaAsP quantum well material. Under a low direct current operation with a Peltier thermoelectric element temperature control (25 °C), the output power of the fundamental transverse‐magnetic polarized mode dominateds over that of the fundamental transverse‐electric polarized mode. The total output powers of the two modes reach an equal state for the 1.06‐mm‐long device at ≈340 mA. The inherent superluminescent mode operations of the superluminescent diode with full‐width at half maximum of spectrum increasing along with the increment of current injection and temperature are discussed. The superluminescent diode is able to operate up to 85 °C and 400 mA. Output powers exceeding 40 mW and spectral ripples better than 0.14 dB are achieved.

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High-Power Quantum-Dot Superluminescent LED With Broadband Drive Current Insensitive Emission Spectra Using a Tapered Active Region

Cited by 28 publications

References 14 publications

Imaging of spectral-domain optical coherence tomography using a superluminescent diode based on InAs quantum dots emitting broadband spectrum with Gaussian-like shape

Imaging of spectral-domain optical coherence tomography using a superluminescent diode based on InAs quantum dots emitting broadband spectrum with Gaussian-like shape

QD Ultrafast and Continuous Wavelength Laser Diodes for Applications in Biology and Medicine

Superluminescent Diode at 0.8-µm with a GaAsP/AlGaAs Tensile-Strained Quantum Well

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