High-Power Semiconductor Laser Fabricated by Standard Photolithography for Direct Modulation

Li, Jing; Wang, Xueyou; Xu, Yuanbo; Dong, Fangfang; Du, Fangling; Wang, Hailing; Zheng, Wanhua

doi:10.1109/lpt.2023.3240413

IEEE Photon. Technol. Lett.

2023

DOI: 10.1109/lpt.2023.3240413

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High-Power Semiconductor Laser Fabricated by Standard Photolithography for Direct Modulation

Jing Li

Xueyou Wang

Yuanbo Xu

et al.

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Cited by 2 publications

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Robust design of mid-infrared GaSb-based single-mode laser diode fabricated by standard photolithography with socketed ridge-waveguide modulation

Yu,

Yang,

Chen

et al. 2023

Opt. Express

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In this paper, we put up a robust design of a stable single-mode-operated GaSb-based laser diode emitting around 1950nm. This novel design structure with socketed ridge-waveguide enables a simple fabrication and batch production of mid-infrared laser diodes on account of the mere usage of standard photolithography. By introducing micron-level index perturbations distributed along the ridge waveguide, the threshold gains of different FP modes are modulated. Four geometrical parameters of the perturbations are systematically optimized by analyzing the reflection spectrum to get a robust single-mode characteristic. Based on the optimized geometrical parameters, 1-mm long uncoated lasers are carried out and exhibit a stable single longitudinal mode from 10 °C to 40 °C with a maximum output power of more than 10 mW. Thus, we prove the feasibility of the standard photolithography to manufacture the monolithic single-mode infrared laser source without regrowth process or nanoscale lithography.

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Robust design of mid-infrared GaSb-based single-mode laser diode fabricated by standard photolithography with socketed ridge-waveguide modulation

Yu,

Yang,

Chen

et al. 2023

Opt. Express

View full text Add to dashboard Cite

show abstract

Single-mode InGaAsP/InP BH lasers based on high-order slotted surface gratings

Guo,

Li,

Xiong

et al. 2024

Opt. Lett.

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A single-mode InGaAsP/InP buried heterostructure (BH) laser based on high-order slotted surface gratings has been fabricated. The introduction of surface slotted grating can simplify the fabrication process of single-mode BH lasers notably. The laser shows a good single-mode emission performance, with larger than 30 dB side-mode suppression ratio (SMSR) when the current is between 200 and 400 mA. Calculations show that the gain coupling mechanism plays a key role for the slot grating to select the emission wavelength. The linewidth of the laser is measured. The fitted Gaussian and Lorentzian linewidths are 1500 and 550 kHz, respectively.

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High-Power Semiconductor Laser Fabricated by Standard Photolithography for Direct Modulation

Cited by 2 publications

References 17 publications

Robust design of mid-infrared GaSb-based single-mode laser diode fabricated by standard photolithography with socketed ridge-waveguide modulation

Robust design of mid-infrared GaSb-based single-mode laser diode fabricated by standard photolithography with socketed ridge-waveguide modulation

Single-mode InGaAsP/InP BH lasers based on high-order slotted surface gratings

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