High-power, single-mode, Al-free InGaAs(P)/InGaP/GaAs distributed feedback diode lasers

Mawst, Luke J.; Yang, Hongfei; Nesnidal, M.; Al-Muhanna, A.; Botez, D.; Vang, T.; Alvarez, Fernando D.; Johnson, Russell

doi:10.1016/s0022-0248(98)00564-8

Cited by 15 publications

(9 citation statements)

References 20 publications

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“…The p-cladding and contact layers are then deposited in a second growth step. For this reason, Mawst et al (1998) suggest and then realize (Earles et al, 1998) an aluminum-free DFB structure, where the grating is etched into an InGaP layer and regrown by a GaAs layer. For this reason, Mawst et al (1998) suggest and then realize (Earles et al, 1998) an aluminum-free DFB structure, where the grating is etched into an InGaP layer and regrown by a GaAs layer.…”

Section: Gratings With Epitaxial Overgrowthmentioning

confidence: 99%

“…For this reason, Mawst et al (1998) suggest and then realize (Earles et al, 1998) an aluminum-free DFB structure, where the grating is etched into an InGaP layer and regrown by a GaAs layer. The design proposed by Mawst et al (1998) is, however, limited to wavelengths above the absorption gap of GaAs. The design proposed by Mawst et al (1998) is, however, limited to wavelengths above the absorption gap of GaAs.…”

Section: Gratings With Epitaxial Overgrowthmentioning

confidence: 99%

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High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths

Crump

Brox

Bugge

et al. 2012

Advances in Semiconductor Lasers

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Section: Gratings With Epitaxial Overgrowthmentioning

confidence: 99%

Section: Gratings With Epitaxial Overgrowthmentioning

confidence: 99%

High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths

Crump

Brox

Bugge

et al. 2012

Advances in Semiconductor Lasers

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“…11b. The corrugated grating spans the whole length of the device [97,98]. To realize electrical contacting it has to be buried as depicted in Fig.…”

Section: Diode Lasers With Integrated Bragg Reflectorsmentioning

confidence: 99%

Blue‐green light generation using high brilliance edge emitting diode lasers

Jechow¹,

Menzel

Paschke

et al. 2010

Laser & Photonics Reviews

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A review about second harmonic generation using edge emitting diode lasers and nonlinear crystals to obtain laser radiation in the blue-green spectral range is presented. Therefore, pump laser radiation with high brightness and narrow bandwidth is necessary. Thus, this review gives an overview of the advances made with distributed feedback and Bragg reflector lasers, tapered lasers and amplifiers as well as external cavity diode lasers and master oscillator power amplifier schemes to achieve high brilliance emission. Since periodically poled materials have enabled high second harmonic conversion efficiencies with low and moderate pump powers, the review is focused on frequency doubling using those materials. The most commonly used materials, their properties and limitations are discussed briefly. Single pass and resonant SHG setups with waveguide and bulk nonlinear crystals are discussed and an emphasis on building compact and integrated devices is made. PPLN waveguide crystal pumped by a DFB laser (above). Integrated SHG device on a CCP heatsink (below).

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“…Epitaxial regrowth in GaAs-based structures is problematic, mainly due to the Al containing layers within the structure, which, when exposed to oxygen, result in poor regrowth interfaces that are deleterious to the laser performance. Previous solutions have included the use of Al-free epitaxial structures [3], steam oxidation for current confinement [4], in situ etching and regrowth within a metal-organic vapor phase epitaxy (MOVPE) reactor [5], and antiguided [6], buried ridge [7], or self-aligned structures [8], [9], where Al layers were exposed to oxygen. All these have associated difficulties in process control, reliability, and design flexibility.…”

Section: Introductionmentioning

confidence: 99%

Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer

Groom

Stevens

Assamoi

et al. 2009

IEEE J. Select. Topics Quantum Electron.

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High-power, single-mode, Al-free InGaAs(P)/InGaP/GaAs distributed feedback diode lasers

Cited by 15 publications

References 20 publications

High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths

High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths

Blue‐green light generation using high brilliance edge emitting diode lasers

Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer

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