High-power single-transverse-mode holey VCSELs (Invited Paper)

Furukawa, Akira; Hoshi, Mitsunari; Sasaki, Shigeo; Matsuzono, A.; Moritoh, Kosuke; Baba, Toshihiko

doi:10.1117/12.601954

Cited by 5 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reduction on the transverse modes of the MM VCSELs to improve the data transmission becomes an important issue [17][18][19] . In 2000, Choquette et al increased the fundamental-mode gain by using the gain aperture, which increases the fundamental-mode selection to make the transverse mode of the VCSEL be improved to the single mode 17 .…”

Section: Vcselmentioning

confidence: 99%

“…In 2004, Haglund et al reported that the shallow surface relief within the 850-nm VCSEL can increase the high-order mode loss, which decreases the transverse modes of the device to single mode (SM) 18 . In 2005, Furukawa et al employed the triangular hole to enhance the optical confinement in the VCSEL, which demonstrates the SM VCSEL 19 . In 2013, Safaisini et al used the 3-mm oxide aperture to confine the transverse mode of the 850-nm VCSEL to quasi-single mode with the side-mode suppression ratio of 18 dB 20 .…”

Section: Vcselmentioning

confidence: 99%

See 1 more Smart Citation

850/940-nm VCSEL for optical communication and 3D sensing

Cheng¹,

Shen²,

Kao³

et al. 2018

Opto-Electronic Advances

View full text Add to dashboard Cite

This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.

show abstract

Section: Vcselmentioning

confidence: 99%

Section: Vcselmentioning

confidence: 99%

850/940-nm VCSEL for optical communication and 3D sensing

Cheng¹,

Shen²,

Kao³

et al. 2018

Opto-Electronic Advances

View full text Add to dashboard Cite

show abstract

“…Therefore, several structures have been developed for single-mode high-power VCSELs, such as the proton-implanted structure. [9] the small oxideconfined structure, [10] the metal aperture, [11] the photonic crystal structure, [12,13] the triangular-hole structure, [14,15] and the surface relief structure. [16] In this paper, a novel surface relief VCSEL (SR-VCSEL) based on gain-cavity mode detuning technology is produced.…”

Section: Introductionmentioning

confidence: 99%

Stable single-mode operation of 894.6 nm VCSEL at high temperatures for Cs atomic sensing

Lei

Zhang

et al. 2017

Chinese Phys. B

View full text Add to dashboard Cite

In this paper, stable single-mode operation at high temperatures is produced by the surface-relief-integrated vertical cavity surface emitting laser (VCSEL). The gain-cavity mode detuning technique is employed to realize high operating temperatures for the VCSEL. The surface relief is etched in the centre of the top side as a mode discriminator for the fundamental mode output, and the threshold current minimum is 1.94 mA at high temperatures by the gain-cavity mode detuning technique. Maximum single-fundamental-mode output power of 0.45 mW at 80 • C is obtained, and the side mode suppression ratios (SMSRs) are more than 30 dB with increasing temperature and current, respectively.

show abstract

“…For conventional oxideconfined VCSELs, the oxide aperture cannot be larger than 3.5-4 µm to maintain single-mode operation, [2] while high-power output requires a larger oxide aperture. To obtain single-mode and high-power devices, many attempts have been made to the photonic crystal structure" [3,4] triangular hole structure, [5] antiguide structure, [6] or long-cavity structure. [7] For all these methods, mode selections are operated by suppressing the higher-order mode.…”

mentioning

confidence: 99%

Single-Fundamental-Mode 850 nm Surface Relief VCSEL

Wei¹,

Xu²,

Deng³

et al. 2012

Chinese Phys. Lett.

View full text Add to dashboard Cite

The performance of the oxide-confined surface-relief (SR) structure vertical-cavity surface-emitting laser (VCSEL) is simulated and analyzed by using the three-dimensional finite-difference time-domain (FDTD) method. The impacts of the device structure parameters on the far-field characteristics are researched. A single-fundamentalmode SR VCSEL with an oxide-aperture of 15 µm is designed and produced. The single-mode power of the VCSEL is 5 mW, the threshold current is 2.5 mA, far-field divergent angles range from 7.8 ∘ to 10.8 ∘ and the sidemode suppression ratio is over 30 dB. The optical and electrical properties of the device are in agreement with the results of FDTD simulation, which shows that the SR technology can effectively suppress the higher-order-mode lasing, and make the SR VCSEL work in a single mode under a larger oxide aperture.

show abstract

High-power single-transverse-mode holey VCSELs (Invited Paper)

Cited by 5 publications

References 0 publications

850/940-nm VCSEL for optical communication and 3D sensing

850/940-nm VCSEL for optical communication and 3D sensing

Stable single-mode operation of 894.6 nm VCSEL at high temperatures for Cs atomic sensing

Single-Fundamental-Mode 850 nm Surface Relief VCSEL

Contact Info

Product

Resources

About