High power spiral cavity quantum cascade superluminescent emitter

Mei, Zhigang; Aung, Nyan; Basak, Abanti; Liu, Peter Q.; Wang, Xiaojun; Fan, Jen-Yu; Troccoli, Mariano; Gmachl, Claire F.

doi:10.1364/oe.23.002713

Cited by 14 publications

(5 citation statements)

References 14 publications

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“…In contrast to previous reports (most the measurements were performed under pulsed mode operation with low duty cycle of ~0.05% 17 , 21 ), to the best of our knowledge, this is the first time that the measurements are performed in CW mode, which is critical for practical applications. In addition, the optical emission from our devices in the Dewar was directly collimated by an HgCdTe detector with a corrected collection efficiency of 10%.…”

Section: Resultsmentioning

confidence: 83%

“…However, such devices are bulky, expensive and complex, which severely impede their widespread development. As a consequence, the lack of an appropriate MIR-BLE has inhibited the development of MIR-OCT systems 17 . Semiconductor BLEs are compact, robust and easy to operate, lending themselves to low-cost mass production, and therefore have great potential to realize such a MIR-OCT imaging system.…”

Section: Introductionmentioning

confidence: 99%

“…These approaches are always at the expense of light emission from one of the two emitting facets, resulting in substantial optical loss, a serious heating effect, low conversion efficiency and less diversity of the device structures. Until now, all previous QC-BLE devices operated only under pulsed mode operation with very low duty cycle 17 , 21 , 22 , and among them, only one device has been shown to function at room temperature (RT) 21 . In this work, a monolithic integrated waveguide structure with the tilted BLE and an optical amplifier is designed and fabricated, leading to the first working RT-CW MIR-QC-BLE.…”

Section: Introductionmentioning

confidence: 99%

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Near-infrared and mid-infrared semiconductor broadband light emitters

et al. 2017

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Semiconductor broadband light emitters have emerged as ideal and vital light sources for a range of biomedical sensing/imaging applications, especially for optical coherence tomography systems. Although near-infrared broadband light emitters have found increasingly wide utilization in these imaging applications, the requirement to simultaneously achieve both a high spectral bandwidth and output power is still challenging for such devices. Owing to the relatively weak amplified spontaneous emission, as a consequence of the very short non-radiative carrier lifetime of the inter-subband transitions in quantum cascade structures, it is even more challenging to obtain desirable mid-infrared broadband light emitters. There have been great efforts in the past 20 years to pursue high-efficiency broadband optical gain and very low reflectivity in waveguide structures, which are two key factors determining the performance of broadband light emitters. Here we describe the realization of a high continuous wave light power of >20 mW and broadband width of >130 nm with near-infrared broadband light emitters and the first mid-infrared broadband light emitters operating under continuous wave mode at room temperature by employing a modulation p-doped InGaAs/GaAs quantum dot active region with a ‘J’-shape ridge waveguide structure and a quantum cascade active region with a dual-end analogous monolithic integrated tapered waveguide structure, respectively. This work is of great importance to improve the performance of existing near-infrared optical coherence tomography systems and describes a major advance toward reliable and cost-effective mid-infrared imaging and sensing systems, which do not presently exist due to the lack of appropriate low-coherence mid-infrared semiconductor broadband light sources.

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Section: Resultsmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Near-infrared and mid-infrared semiconductor broadband light emitters

et al. 2017

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“…It is well known that a tilted or bent waveguide design with relatively small angles cannot offer low reflectivity of < 10 −6 to inhibit lasing in the MIR QC SLEs [19] . As a result, a 17°-inclined waveguide was used in the previous report to achieve such a low reflectivity, but this design limited the on-chip miniaturization and encapsulation [16,17,19,20] . Moreover, from our previous work [19,20] , a mutation of refractive index in the waveguide structure of a QC SLE is the key point to realize highquality superluminescent emission.…”

Section: Resultsmentioning

confidence: 99%

Quantum cascade superluminescent light emitters with high power and compact structure

Sun¹,

Hou²,

Chen³

et al. 2020

J. Semicond.

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Quantum cascade (QC) superluminescent light emitters (SLEs) have emerged as desirable broadband mid-infrared (MIR) light sources for growing number of applications in areas like medical imaging, gas sensing and national defense. However, it is challenging to obtain a practical high-power device due to the very low efficiency of spontaneous emission in the intersubband transitions in QC structures. Herein a design of ~5 μm SLEs is demonstrated with a two-phonon resonance-based QC active structure coupled with a compact combinatorial waveguide structure which comprises a short straight part adjacent to a tilted stripe and to a J-shaped waveguide. The as-fabricated SLEs achieve a high output power of 1.8 mW, exhibiting the potential to be integrated into array devices without taking up too much chip space. These results may facilitate the realization of SLE arrays to attain larger output power and pave the pathway towards the practical applications of broadband MIR light sources.

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“…Применение конструкции фотонных кристаллов [2], лазеров с распределенным брэгговским отражателем [3] также позволяет осуществлять селекцию мод. В свою очередь применение различных подходов, основанных на использовании связанных резонаторов [4][5][6][7], позволяет исключить необходимость применения относительно сложных методов электронной лучевой литографии, что особенно актуально, когда нет требования к величине исходящей мощности, а требуется только узкая линия излучения с относительно малой мощностью (например, для анализаторов остаточных газов). Один из перспективных подходов предложен в работах [8][9][10][11] и позволяет осуществить селекцию мод за счет наличия секции резонатора малой длины.…”

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Особенности одночастотной генерации в квантово-каскадных лазерах спектрального диапазона 7.5-8.0 μm с малой длиной резонатора

Бабичев¹,

Колодезный²,

Гладышев³

et al. 2022

Письма В Журнал Технической Физики

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The possibility of realizing single-mode emission in quantum-cascade lasers due to modulation of output optical losses in a Fabry-Perot cavity is demonstrated. For the active region of the 7.5–8.0 μm spectral range, two-phonon resonance design we used thus the 50 stages and waveguide layers based on indium phosphide made it possible to realize single-mode lasing at 7.765 μm and at temperature of 292 K. Side-mode suppression ratio was about 24 dB and remained the same with an increase in the current pumping up to 1.2 of the threshold current values. The coefficient of wavelength shift with temperature (temperature tuning) in the single-mode lasing regime was 0.56 nm / K.

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High power spiral cavity quantum cascade superluminescent emitter

Cited by 14 publications

References 14 publications

Near-infrared and mid-infrared semiconductor broadband light emitters

Near-infrared and mid-infrared semiconductor broadband light emitters

Quantum cascade superluminescent light emitters with high power and compact structure

Особенности одночастотной генерации в квантово-каскадных лазерах спектрального диапазона 7.5-8.0 μm с малой длиной резонатора

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High power spiral cavity quantum cascade superluminescent emitter

Cited by 14 publications

References 14 publications

Near-infrared and mid-infrared semiconductor broadband light emitters

Near-infrared and mid-infrared semiconductor broadband light emitters

Quantum cascade superluminescent light emitters with high power and compact structure

Особенности одночастотной генерации в квантово-каскадных лазерах спектрального диапазона 7.5-8.0 &mu;m с малой длиной резонатора

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Особенности одночастотной генерации в квантово-каскадных лазерах спектрального диапазона 7.5-8.0 μm с малой длиной резонатора