High-Power Supersymmetric Semiconductor Laser with a Narrow Linewidth

Abstract

We have designed and fabricated a kind of supersymmetric slotted Fabry–Perot semiconductor laser near 1550 nm to achieve a single-mode, high-power, and narrow-linewidth operation. The structure of the laser is composed of an electrically pumped broad ridge waveguide in the middle to provide optical gain, a group of periodic slots etched near the front facet to suppress the extra longitudinal modes and achieve a narrow linewidth, and a pair of passive superpartner waveguides located on both sides to filter out the high-order lateral modes in the broad waveguide. The device measured under the temperature of 25 °C shows an output power of 113 mW, a single-lobe lateral far-field distribution with the full width at half maximum of 7.8°, a peak wavelength of 1559.7 nm with the side-mode suppression ratio of 48.5 dB, and an intrinsic linewidth of 230 kHz at the bias current of 800 mA. The device is a promising candidate for cost-effective light sources for coherent communication systems and LiDARs.

High-power single-mode semiconductor lasers based on supersymmetric structures around 795 nm

“…However, these methods have the drawback of causing significant loss to the fundamental lateral mode while suppressing higher-order lateral modes, or they introduce complex design, making fabrication more challenging. In contrast, the supersymmetric laser consists of one electrically injected wide main waveguide in the middle to provide gain for laser and two lossy sub-waveguides on both sides to dissipate the high-order modes in the main waveguide [9][10][11]. By appropriately selecting the widths of each waveguide and the spacing between them, the higher-order lateral modes of the main waveguide can be coupled and absorbed by the sub-waveguides on both sides.…”