High power three-level rectifier comprising SiC MOSFET &amp; Si diode hybrid power stage

Li, Chushan; Lei, Jintao; Guan, Qingxin; Wang, Shuai; Xu, Dewei

doi:10.1109/apec.2018.8340981

Cited by 4 publications

(2 citation statements)

References 15 publications

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“…Because of the similarity between Si IGBT+SiC MOSFET HyS and Si IGBT+SiC JFET HyS [51] , only Si IGBT + SiC MOSFET HyS is analyzed in this article. Detailed introductions of Si IGBT + SiC JFET HyS are presented elsewhere [60][61] .…”

Section: Si Igbt + Sic Mosfet/jfetmentioning

confidence: 99%

A review of WBG and Si devices hybrid applications

Zhang

Zheng

Lou

2021

Chin. J. Electr. Eng.

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In recent years, next-generation power semiconductor devices, represented by silicon carbide (SiC) and gallium nitride (GaN), have gradually emerged. Because wide-bandgap (WBG) devices have better electrical characteristics than those of silicon (Si) based devices, they have attracted increased attention both from academic researchers and industrial engineers. Employing WBG devices will further improve the efficiency and power density of power converters. However, the current price of WBG devices remains extremely high. Thus, some researches have focused on the hybrid utilization of WBG devices and Si-based devices to achieve a tradeoff between the performance and cost. To summarize the current research on WBG/Si hybrid applications, the issues mentioned above with representative research approaches, results, and characteristics, are systematically reviewed. Finally, the current research on WBG/Si hybrid applications and their future trends are discussed.

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Section: Si Igbt + Sic Mosfet/jfetmentioning

confidence: 99%

A review of WBG and Si devices hybrid applications

Zhang

Zheng

Lou

2021

Chin. J. Electr. Eng.

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“…Many renewable generation and energy storage technologies are DC, and were connected to the utility grid via DC/AC and AC/DC converters. On the other hand, there are high penetration of DC loads in power grid like adjustable speed drives, power supplies, etc [2]. These DC loads have a front-end rectifier to convert AC grid voltage to DC voltage.…”

Section: Introductionmentioning

confidence: 99%

Modelling of Output Admittance Coupling Between Shunt Active Power Filters and Non-linear Loads

Lei

Qin

et al. 2019

2019 4th IEEE Workshop on the Electronic Grid (eGRID)

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Nowadays Shunt Active Power Filter (SAPF) system still suffers from stability issue which heavily detect its performance. In this paper, an improved system level model is proposed to investigate the coupling effect that will cause the system level instability. This model describes the coupling effect with an additional output admittance and shows system stability more directly. In order to investigate the correctness of the proposed method, a grid including the SAPF and a non-linear load is modelled with both conventional approach and proposed modeling method. Simulations are carried out with the same parameters. Results show that the instability of the grid current observed in the simulation results is not reflected in the stability analysis based on the conventional model. On the other hand, the stability analysis with the new model matches the simulation results very well. Also, further verification is made by a frequency-sweep result, which proves the accuracy of proposed model.

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