High-power Yb:YAG rod oscillators and amplifiers

Sumida, David S.; Bruesselbach, H.; Byren, Robert W.; Mangir, Metin S.; Reeder, R. A.

doi:10.1117/12.308662

Cited by 33 publications

(16 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The 4f 13 electronic configuration of the Yb 3+ ion located in a host matrix results in a very favourable energy level scheme constituted of only one excited sate, 2 F 5/2 [1]. The possible low quantum defect, around 10% or less, between pump and laser photons reduces the heat generated inside the material and then its thermal deformation [2,3]. Excited-state absorption and upconversion losses, which are traditional factors limiting the laser efficiency, cannot occur for Yb 3+ centres.…”

Section: Introductionmentioning

confidence: 99%

Lasing Yb3+ in crystals with a wavelength dependence anisotropy displayed from La2CaB10O19

Brenier

Zhang

2012

Appl. Phys. B

View full text Add to dashboard Cite

We report spectroscopic and laser properties for propagation directions outside the principal axes of Yb 3+ -doped low symmetry laser crystals with a special devotion to the wavelength dependence anisotropy. We illustrate our report with experimental data in the 900-1075 nm range of wavelengths from the Yb 3+ :La 2 CaB 10 O 19 monoclinic crystal excited under laser diode pumping at 975 nm. This study, which makes easier the realization of Yb 3+ lasers with an efficient free-running operation at the wavelength having the highest emission intensity or at a specified wavelength, or emitting two frequencies with a specified frequency difference, is of promising interest for applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Lasing Yb3+ in crystals with a wavelength dependence anisotropy displayed from La2CaB10O19

Brenier

Zhang

2012

Appl. Phys. B

View full text Add to dashboard Cite

show abstract

“…The absence of these effects permits high dopant concentrations while maintaining low f luorescence quenching and gives rise to high efficiencies even at high pump powers. 2 The longer emission lifetimes of Yb 31 -doped materials ensure higher energy-storage capabilities. Finally, because of stronger electron -phonon interaction, the broader absorption and emission spectra of these materials allow diode pumping with relaxed temperature regulation constraints, wide tunabilities, and the production of ultrashort pulses.…”

Section: Interest In Ybmentioning

confidence: 99%

High-power tunable diode-pumped Yb^3+:CaF_2 laser

et al. 2004

View full text Add to dashboard Cite

Results of diode-pumped cw laser operation of an Interest in Yb 31 -doped materials is still growing, owing to the increasing availability of high-power, highbrightness InGaAs laser diodes emitting near 980 nm. For numerous applications near 1.05 mm, Yb 31 -doped materials exhibit various advantages compared with their Nd 31 counterparts. The fact that there are only two electronic multiplets in the near-infrared spectral domain 1 leads to very low quantum defects (typically ,10%), reducing thermal loads and preventing undesired effects such as upconversion and excitedstate absorption. The absence of these effects permits high dopant concentrations while maintaining low f luorescence quenching and gives rise to high efficiencies even at high pump powers. 2The longer emission lifetimes of Yb 31 -doped materials ensure higher energy-storage capabilities. Finally, because of stronger electron -phonon interaction, the broader absorption and emission spectra of these materials allow diode pumping with relaxed temperature regulation constraints, wide tunabilities, and the production of ultrashort pulses.

show abstract

“…Relative to their Nd-doped counterparts, Yb-doped materials are much more likely to yield high efficiencies at high powers [3].…”

Section: Introductionmentioning

confidence: 99%