High-pressure behavior of the bond-bending mode of AIN

Yakovenko, E. V.; Gauthier, Michel; Polian, A.

doi:10.1134/1.1767565

Cited by 10 publications

(17 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Figure 2(b) shows the pressure dependence of the LO-TO splittings in the wz phase. According to our measurements both the LO-TO splitting of both the A 1 and E 1 modes are almost constant or even decrease slightly with increasing pressure as already found by Yakovenko et al [4]. This behavior is in reasonable agreement with our ab initio calculations, which yield an almost constant LO-TO splitting for both modes with pressure.…”

Section: Original Papersupporting

confidence: 92%

“…The experimental discrepancies could be due to differences in sample preparation and pressure environment that may affect the pressure response of the Raman modes in AlN [4]. Additionally, the weak intensity of the TO and LO modes reported in Ref.…”

Section: Original Papermentioning

confidence: 86%

“…Afterwards, Goñi et al compared the pressure dependence of the Raman-active modes in GaN and AlN with ab initio calculations and found a small but increasing LO-TO (E 1 ) splitting under pressure [3]. However, a decrease of the LO-TO splitting for both A 1 and E 1 modes was estimated in recent Raman measurements of Yakovenko et al [4]. To our knowledge, this work is the only one reporting the pressure dependence of the six Raman-active modes of wurtzite (wz) AlN up to the wurtzite-to-rocksalt phase transition.…”

Section: Introductionmentioning

confidence: 92%

See 2 more Smart Citations

Effect of pressure on the Raman scattering of wurtzite AlN

Manjón

Errandonea

Garro

et al. 2006

Physica Status Solidi (b)

View full text Add to dashboard Cite

High-pressure Raman spectra of wurtzite aluminum nitride were measured up to 25 GPa. The Ramanactive modes in wurtzite-AlN were obtained up to the wurtzite-to-rocksalt transition at 20 GPa and their pressure coefficients compared with those obtained from ab initio lattice dynamics calculations. A slight decrease of the LO -TO splitting under pressure has been measured. We also report Raman scattering of the rocksalt phase of AlN during downstroke. The comparison of previously reported Raman scattering in rocksalt-GaN and ab initio calculations suggests that the Raman scattering we have measured in rocksaltAlN likely corresponds to the one-phonon density of states of the rocksalt phase. A partial return to the wurtzite phase is found at ambient pressure after fully releasing pressure.

show abstract

Section: Original Papersupporting

confidence: 92%

Section: Original Papermentioning

confidence: 86%

Section: Introductionmentioning

confidence: 92%

See 1 more Smart Citation

Effect of pressure on the Raman scattering of wurtzite AlN

Manjón

Errandonea

Garro

et al. 2006

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The softening of these modes has been related to the stability of tetrahedral structures under pressure. 23,24 Conversely, the present DFT calculations do not predict any softening of the TA branches of rs-InN. The phonon frequencies at 0 GPa (ω i0 ), linear pressure coefficients (a i ), and mode Grüneisen parameters (γ i = B 0 a i /ω i0 ) for the zonecenter optical modes of w-InN and rs-InN as obtained from the present DFT calculations are displayed in Tables II and III, respectively.…”

Section: Ab Initio Calculationsmentioning

confidence: 59%

“…13), as occurs in the case of the E 2l branch and also of TA modes from high-symmetry and high-wave-vector points of the Brillouin zone in III-V semiconductors. 23,24 This band probably contains contributions from E 2l modes and also from TA modes along the entire Brillouin zone, which are activated by disorder in the backtransformed, poorly crystalline w-InN sample.…”

Section: E Rocksalt-to-wurtzite Backtransformationmentioning

confidence: 99%

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

et al. 2013

View full text Add to dashboard Cite

We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanism responsible for the selective excitation of LO phonons with large wave vectors in w-InN. The pressure behavior of the L − coupled mode observed in a heavily doped n-type sample allows us to estimate the pressure dependence of the electron effective mass in w-InN. The results thus obtained are in good agreement with k · p theory. The wurtzite-to-rocksalt phase transition on the upstroke cycle and the rocksalt-to-wurtzite backtransition on the downstroke cycle are investigated, and the Raman spectra of both phases are interpreted in terms of DFT lattice-dynamical calculations.

show abstract

Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift

et al. 2021

View full text Add to dashboard Cite

Strain engineering as one of the most powerful techniques for tuning optical and electronic properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we reveal, that the linear model based on the experimental data limited to within a small range of biaxial strains (< 0.2%), which is widely used for the non-destructive Raman study of strain with nanometer-scale spatial resolution is not valid for the binary wurtzite-structure group-III nitrides GaN and AlN. Importantly, we found that the discrepancy between the experimental values of strain and those calculated via Raman spectroscopy increases as the strain in both GaN and AlN increases. Herein, a new model has been developed to describe the strain-induced Raman frequency shift in GaN and AlN for a wide range of biaxial strains (up to 2.5%). Finally, we proposed a new approach to correlate the Raman frequency shift and strain, which is based on the lattice coherency in the epitaxial layers of superlattice structures and can be used for a wide range of materials. Electronic Supplementary Material Supplementary material is available for this article at 10.1007/s12274-021-3855-4 and is accessible for authorized users.

show abstract

High-pressure behavior of the bond-bending mode of AIN

Cited by 10 publications

References 35 publications

Effect of pressure on the Raman scattering of wurtzite AlN

Effect of pressure on the Raman scattering of wurtzite AlN

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift

Contact Info

Product

Resources

About