High‐Pressure Chemical Deposition for Void‐Free Filling of Extreme Aspect Ratio Templates

Baril, Neil F.; Keshavarzi, Banafsheh; Sparks, Justin R.; Krishnamurthi, M.; Temnykh, I.; Sazio, Pier J. A.; Peacock, Anna C.; Borhan, Ali; Gopalan, Venkatraman; Badding, John V.

doi:10.1002/adma.201001199

Cited by 27 publications

(28 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1(d)] due to the reduced molecular mean free path (less than 1 nm). Such uniqueness of this technique has been demonstrated in both void-free filling of optical fiber templates 18 and 3D nano-structured (5-10 nm voids) metalattices. 19 The molecular mean free path can be reduced to be comparable with the voids in the micro-fibers in the cotton fabric before deposition so that materials can be infiltrated inside.…”

Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 90%

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Cheng

Grede

et al. 2018

APL Materials

Self Cite

View full text Add to dashboard Cite

Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 90%

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Cheng

Grede

et al. 2018

APL Materials

Self Cite

View full text Add to dashboard Cite

“…To reduce the area of this interior surface and the optical propagation losses associated with its roughness, the internal diameter of these tubes should be reduced as much as possible. For unary semiconductor waveguides deposited from hydride precursors, we have shown that it is possible to deposit completely void-free waveguides 13 . In such instances, solid wires can be formed because the hydrogen reaction byproduct and helium carrier can diffuse through the silica walls, allowing for continued mass transport and deposition even when the pore is completely blocked downstream.…”

Section: Resultsmentioning

confidence: 99%

Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

Sazio

Sparks

et al. 2015

SPIE Proceedings

Self Cite

View full text Add to dashboard Cite

ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 -5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode corecladding waveguiding.

show abstract

“…For unary semiconductor waveguides deposited from hydride precursors, we have shown that it is possible to deposit completely void-free waveguides. [ 23 ] In such instances, solid wires can be formed because the hydrogen reaction byproduct and helium carrier can diffuse through the silica walls, allowing for continued mass transport and deposition even when the pore is completely blocked downstream. However, the precursor chemistry employed for ZnSe has methane as a reaction byproduct (Figure 1 a), which is too large to diffuse rapidly through the capillary walls and must be exhausted through the interior of the ZnSe tube along with unreacted precursor molecules, and the precursor conversion effi ciency is estimated to be 15%.…”

Section: Zinc Selenide Optical Fibersmentioning

confidence: 99%

Zinc Selenide Optical Fibers

et al. 2011

Self Cite

View full text Add to dashboard Cite

Semiconductor waveguide fabrication for photonics applications is usually performed in a planar geometry. However, over the past decade a new fi eld of semiconductor-based optical fi ber devices has emerged. The drawing of soft chalcogenide semiconductor glasses together with low melting point metals allows for meters-long distributed photoconductive detectors, for example. [ 1 , 2 ] Crystalline unary semiconductors (e.g., Si, Ge) have been chemically deposited at high pressure into silica capillaries, [ 3 , 4 ] allowing the optical and electronic properties of these materials to be exploited for applications such as all-fi ber optoelectronics. [ 5 -7 ] In contrast to planar rib and ridge waveguides with rectilinear cross sections that generally give rise to polarization dependence, the cylindrical fi ber waveguides have the advantage of a circular, polarization-independent cross section. Furthermore, the fi ber pores, and thus the wires deposited in them, are exceptionally smooth [ 8 ] with extremely uniform diameter over their entire length. The high-pressure chemical vapor deposition (HPCVD) technique is simple, low cost, and fl exible so that it can be modifi ed to fi ll a range of capillaries with differing core dimensions, while high production rates can be obtained by parallel fabrication of multiple fi bers in a single deposition. It can also be extended to fi ll the large number of micro-and nanoscale pores in microstructured optical fi bers (MOFs), providing additional geometrical design fl exibility to enhance the potential application base of the fi ber devices. [ 9 ] Semiconductor fi bers fabricated via HPCVD in silica pores also retain the inherent characteristics of silica fi bers, including their robustness and compatibility with existing optical fi ber infrastructure, thus presenting considerable advantages over fi bers based on multicomponent soft glasses.However, one key challenge in this rapidly developing fi eld is to realize low-optical-loss crystalline, direct-bandgap compound semiconductor fi bers. High-performance optoelectronic devices are almost exclusively fabricated from crystalline compound semiconductors owing to their superior light emission effi ciency, excellent electronic properties (e.g., high carrier mobility), and large optical nonlinearities. [ 10 ] In particular, compound semiconductors can have high second-order nonlinear optical coeffi cients, χ (2) , [ 11 ] not found in centrosymmetric crystalline unary semiconductors or in amorphous semiconductors. These second-order nonlinearities allow for effi cient frequency conversion on which devices such as optical parametric oscillators are typically based. [ 10 ] Compound semiconductors can also be optically transparent over a wider wavelength range than unary semiconductors, with ZnSe, for example, having excellent optical transmission at wavelengths from 500 to 22 000 nm. [ 12 ] An additional advantage of crystalline compound semiconductors is their ability to host transition metal ions; Cr 2 + -doped ZnSe functions as an ...

show abstract

High‐Pressure Chemical Deposition for Void‐Free Filling of Extreme Aspect Ratio Templates

Cited by 27 publications

References 21 publications

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

Zinc Selenide Optical Fibers

Contact Info

Product

Resources

About