High-Pressure Electrical-Transport Properties of SnS: Experimental and Theoretical Approaches

Ke, Feng; Yang, Jie; Liu, Cailong; Wang, Qinglin; Li, Yuqiang; Zhang, Junkai; Wu, Lei; Zhang, Xin; Han, Yonghao; Wu, Baojia; Ma, Yanzhang

doi:10.1021/jp3112556

Cited by 45 publications

(34 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in Figure 3, the α-SnS layer structure has two distinct bond lengths, one nearly parallel with the a axis (Sn1-S1 or Sn2-S2) and another perpendicular to the a axis (Sn2-S1). The corresponding bond lengths at zero pressure, 2.687 and 2.698 Å, agree well with those reported by Ke et al [23] (2.661 and 2.710 Å). With application of pressure, changes in Sn1-S1…”

Section: Structural Propertiessupporting

confidence: 91%

“…The corresponding equilibrium lattice parameters are a = 11.111 Å, b = 4.021 Å, and c = 4.283 Å. Our results are better than other available theoretical data from Malone and Kaxiras [6], Rajagopalan et al [20], He et al [22], and Ke et al [23]. The calculated cellinternal dimensionless parameters are x = 0.1147, z = 0.1254 for Sn, and x = 0.8542, z = 0.4624 for S, which are in good agreement with the experimental data (x = 0.1194, z = 0.1198 for Sn, and x = 0.8508, z = 0.4793 for S) [26].…”

Section: Structural Propertiescontrasting

confidence: 48%

“…a , Sn2-S1 this work, Sn1-S2 this work, Sn1-S1 this work, Sn2-S1 Figure 3: Variation of bond lengths Sn1-S1 (the bond nearly parallel to the a axis), Sn1-S2 (bond in the b-c planes), and Sn2-S1 (the closest nonbonding separations in the b-c planes) as a function of pressure, compared with the theoretical data: a [23]. different at high temperature, C P also increases slightly at high temperature, but C V converges to the Dolong-Petit limit (about 49.7 J/K·mol).…”

Section: Thermodynamic Propertiesmentioning

confidence: 98%

“…It can be seen that the distance of Sn1-S2 shortens obviously with compression. Ke et al [23] reported that two new bonds appear between Sn1 and S2 at a certain distance, and another phase (a five-fold coordinated Cmcm phase state) came into being. This was not our purpose in the present work, although we are pleased to find that our results have a similar trend as those of Ke et al [23].…”

Section: Structural Propertiesmentioning

confidence: 99%

“…Experimental studies [14][15][16][17][18][19] have indicated that α-SnS is a narrow gap semiconductor with an indirect band gap centered in the range of 1.05-1.60 eV and an direct band gap located at a slightly higher energy range of 1.296-2.1 eV. The ab initio calculations have given somewhat scattered points ranging from 0.69 to 1.6 eV for the indirect and 1.3-1.8 eV for the direct band gap [6,15,[20][21][22][23]. The optical properties of α-SnS were studied by optical, infrared, and Raman spectroscopy, and a pronounced anisotropy of the optical constants was observed [1,14,15,17,21].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Structural, Thermodynamic, Elastic, and Electronic Properties of α-SnS at High Pressure from First-Principles Investigations

Liu

Duan

2015

Zeitschrift Für Naturforschung A

View full text Add to dashboard Cite

SnS has potential technical applications, but many of its properties are still not well studied. In this work, the structural, thermodynamic, elastic, and electronic properties of α-SnS have been investigated by the plane wave pseudo-potential density functional theory with the framework of generalised gradient approximation. The calculated pressure-dependent lattice parameters agree well with the available experimental data. Our thermodynamic properties of α-SnS, including heat capacity C P , entropy S, and Gibbs free energy relation of -(G T - H 0 ) curves, show similar growth trends as the experimental data. At T = 298.15 K, our C P = 52.31 J/mol·K, S = 78.93 J/mol·K, and -(G T - H 0 ) = 12.03 J/mol all agree very well with experimental data C P = 48.77 J/mol·K and 49.25 J/mol·K, S = 76.78 J/mol·K, and -(G T - H 0 ) = 12.38 J/mol. The elastic constants, together with other elastic properties, are also computed. The anisotropy analyses indicate obvious elastic anisotropy for α-SnS along different symmetry planes and axes. Moreover, calculations demonstrate that α-SnS is an indirect gap semiconductor, and it transforms to semimetal with pressure increasing up to 10.2 GPa. Combined with the density of states, the characters of the band structure have been analysed in detail.

show abstract

Section: Structural Propertiessupporting

confidence: 91%

Section: Structural Propertiescontrasting

confidence: 48%

Section: Thermodynamic Propertiesmentioning

confidence: 98%

Section: Structural Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Structural, Thermodynamic, Elastic, and Electronic Properties of α-SnS at High Pressure from First-Principles Investigations

Liu

Duan

2015

Zeitschrift Für Naturforschung A

View full text Add to dashboard Cite

show abstract

Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition

Wang

Zhang

Seliverstov

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

Layered metal monochalcogenides have attracted significant interest in the 2D family since they show different unique properties from their bulk counterparts. The comprehensive synthesis, characterization, and optoelectrical applications of 2D‐layered tin monosulfide (SnS) grown by pulsed laser deposition are reported. Few‐layer SnS‐based field‐effect transistors (FETs) and photodetectors are fabricated on Si/SiO2 substrates. The premium 2D SnS FETs yield an on/off ratio of 3.41 × 106, a subthreshold swing of 180 mV dec−1, and a field effect mobility (µFE) of 1.48 cm2 V−1 s−1 in a 14‐monolayer SnS device. The layered SnS photodetectors show a broad photoresponse from ultraviolet to near‐infrared (365–820 nm). In addition, the SnS phototransistors present an improved detectivity of 9.78 × 1010 cm2 Hz1/2 W−1 and rapid response constants of 60 ms for grow‐time constant τg and 10 ms for decay‐time constant τd under extremely weak 365 nm illumination. This study sheds light on layer‐dependent optoelectronic properties of 2D SnS that promise to be important in next‐generation 2D optoelectronic devices.

show abstract

A GSH‐Gated DNA Nanodevice for Tumor‐Specific Signal Amplification of microRNA and MR Imaging–Guided Theranostics

Yan

Lin

et al. 2019

Small

View full text Add to dashboard Cite

Developing tumor‐responsive diagnosis and therapy strategies for tumor theranostics is still a challenge owing to their high accuracy and specificity. Herein, an AND logic gated–DNA nanodevice, based on the fluorescence nucleic acid probe and polymer‐modified MnO2 nanosheets, for glutathione (GSH)‐gated miRNA‐21 signal amplification and GSH‐activated magnetic resonance (MR) imaging–guided chemodynamic therapy (CDT) is reported. In the presence of overexpressed miRNA and GSH (tumor cells), the nanodevice can be in situ activated and release significantly amplified fluorescence signals and MR signals. Conversely, the fluorescence signal is quenched and MR signal remains at the background level with low miRNA and GSH (normal cells), efficiently reducing the false‐positive signals by more than 50%. Under the guide of miRNA profiling and MR imaging, the tumor‐responsive hydroxyl radical (·OH) can effectively kill tumor cells. Furthermore, the nanodevice shows catalase‐like activity and glucose oxidase–like activity with the performance of O2 production and glucose consumption. This is the first time to fabricate a tumor‐responsive theranostic DNA nanodevice with tumor‐specific signal amplification of microRNA and GSH‐activated MR imaging for CDT, potential hypoxia relief and starvation therapy, which provides a new insight for designing smart theranostic strategies.

show abstract

High-Pressure Electrical-Transport Properties of SnS: Experimental and Theoretical Approaches

Cited by 45 publications

References 40 publications

Structural, Thermodynamic, Elastic, and Electronic Properties of α-SnS at High Pressure from First-Principles Investigations

Structural, Thermodynamic, Elastic, and Electronic Properties of α-SnS at High Pressure from First-Principles Investigations

Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition

A GSH‐Gated DNA Nanodevice for Tumor‐Specific Signal Amplification of microRNA and MR Imaging–Guided Theranostics

Contact Info

Product

Resources

About