High-pressure–high-temperature study of Hg1−xMnxS

Paszkowicz, W.; Szuszkiewicz, W.; Dynowska, E.; Domagała, J.; Witkowska, B.; Marczak, M.; Zinn, Peter

doi:10.1016/s0925-8388(98)01008-1

Cited by 5 publications

(3 citation statements)

References 19 publications

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“…For Fe ''e-mail address: paszk@ifpan.edu.pl doped crystals of low Fe content, it was found that prolonged grinding of metacinnabar leads to partial transformation into cinnabar-type phase. This transition normally occurs at a pressure of the order of about 30 itbar, depending on the transition metal content (Paszkowicz, 1999a(Paszkowicz, , 1999b. In the samples studied in the present work, the phase analysis did not show any foreign phase.…”

Section: Resultsmentioning

confidence: 99%

Powder diffraction data of semimagnetic semiconductors Hg_0.80Mn_0.20S, Hg_0.89Fe_0.11S and Hg_0.98Co_0.02S

Paszkowicz

2000

Powder Diffr.

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Powder X-ray diffraction data are reported for semimagnetic semiconductor Hg0.89Fe0.11S and Hg0.98Co0.02S crystals grown by the Bridgman method and for Hg0.80Mn0.20S crystal synthesized by a solid-state reaction method. The crystals have the sphalerite structure of metacinnabar (sphalerite-type high-temperature polymorph of HgS, space group F4¯3m). Phase analysis does not show any trace of other phases. The lattice parameters of the studied samples are a=5.803 20(5) Å, 5.8063(1) Å and 5.839 80(6) Å, respectively. The calculated density is reported.

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Section: Resultsmentioning

confidence: 99%

Powder diffraction data of semimagnetic semiconductors Hg_0.80Mn_0.20S, Hg_0.89Fe_0.11S and Hg_0.98Co_0.02S

Paszkowicz

2000

Powder Diffr.

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“…Some of the techniques listed above required oriented, more than 5 mm in size single crystals and were not applicable in the past. New crystals corresponding to the area of zinc blende structure stability limit were perfect objects for phase transition studies (e.g., [10]). Finally, the existence of such crystals extends the famous family of semimagnetic semiconductors.…”

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“…Information about the structural properties of these new crystals is dispersed in the literature (e.g., [9,10]), but it has never been a topic of separate, detailed investigations. The aim of the present work was to stabilize b-HgS by the introduction of a small amount of selected transition metals (Cr, Mn, Fe, or Co) into mercury sulphide, next to grow the mixed crystals on the basis of this binary compound in a technologically limited composition range (corresponding to the transition metal content below 10%) and to investigate the structural properties of the grown crystals.…”

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Growth and Structural Characterization of Zinc Blende HgS

Szuszkiewicz

Dynowska

ewski

et al. 2002

phys. stat. sol. (b)

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The zinc blende (metastable) modification of mercury sulphide was stabilized by the partial substitution of Hg atoms by Mn, Fe, and Co. The structure of such crystals grown by the modified Bridgman method was investigated by X-ray diffraction and electron transmission spectroscopy techniques. The single-phase character of the crystals was demonstrated, the presence of defects resulting from the disorder in the stacking sequence of (111) layers was evidenced.Introduction Mercury sulphide phase stable at ambient conditions is a-HgS which crystallizes in the cinnabar structure. Zinc blende (or sphalerite) mercury sulphide (bHgS) is a metastable modification of this compound and cannot be obtained by equilibrium growth techniques. b-HgS together with other mercury chalcogenides (HgTe and HgSe) belongs to zero-gap semiconductors. Because of their particular physical properties (inverted band structure, high non-parabolicity of the conduction band, etc.) these materials attracted a lot of attention in the past. For many years, very limited data concerning the properties of b-HgS were deduced from results of investigations of mixed crystals as well as from the studies of thin b-HgS layers evaporated on specific substrates. Two different groups of such mixed crystals were grown. In the first (anionic solid solutions) group significant part of S atoms was replaced by Se or Te. The second group of mixed crystals (cationic solid solutions) was obtained by a partial substitution of Hg atoms by another metal like Zn or Cd.Zinc blende structure of the mixed crystals grown on the basis of mercury sulphide can also be achieved by a partial substitution of Hg atoms by Mn as it has been demonstrated more than twenty years ago by the hydrothermal method (see [1]). Hg 1--x Mn x S mixed crystals have been synthesized in a composition range up to the value x = 0.375 [1], which corresponds to the solubility limit of Mn in HgS. However, due to the small size of crystallites grown by this method, only very few structural and magnetic properties were investigated for such polycrystalline material. Recently, results of both, magnetic and infrared reflectivity measurements performed on Hg 1--x Mn x S polycrystalline pellets can also be found in the literature (e.g., [2]).This situation changed a few years ago, when it was demonstrated that the addition of a few other 3d transition metals (TM) may stabilize the b-HgS crystal structure and large single mixed crystals can be grown with quite a small TM content (TM = Mn, Fe or Co) [3]. Progress in the technology mentioned above enables a development of

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HgS: phase transitions

Strauch

2012

Landolt-Börnstein - Group III Condensed Matter

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High-pressure–high-temperature study of Hg1−xMnxS

Cited by 5 publications

References 19 publications

Powder diffraction data of semimagnetic semiconductors Hg_0.80Mn_0.20S, Hg_0.89Fe_0.11S and Hg_0.98Co_0.02S

Powder diffraction data of semimagnetic semiconductors Hg_0.80Mn_0.20S, Hg_0.89Fe_0.11S and Hg_0.98Co_0.02S

Growth and Structural Characterization of Zinc Blende HgS

HgS: phase transitions

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High-pressure–high-temperature study of Hg1−xMnxS

Cited by 5 publications

References 19 publications

Powder diffraction data of semimagnetic semiconductors Hg0.80Mn0.20S, Hg0.89Fe0.11S and Hg0.98Co0.02S

Powder diffraction data of semimagnetic semiconductors Hg0.80Mn0.20S, Hg0.89Fe0.11S and Hg0.98Co0.02S

Growth and Structural Characterization of Zinc Blende HgS

HgS: phase transitions

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Powder diffraction data of semimagnetic semiconductors Hg_0.80Mn_0.20S, Hg_0.89Fe_0.11S and Hg_0.98Co_0.02S

Powder diffraction data of semimagnetic semiconductors Hg_0.80Mn_0.20S, Hg_0.89Fe_0.11S and Hg_0.98Co_0.02S