High-Pressure Phase Transitions of Morphologically Distinct Zn₂SnO₄ Nanostructures

Abstract

Many aspects of nanostructured materials at high pressures are still unexplored. We present here, high-pressure structural behavior of two Zn 2 SnO 4 nanomaterials with inverse spinel type, one a particle with size of ∼7 nm [zero dimensional (0-D)] and the other with a chain-like [one dimensional (1-D)] morphology. We performed in situ micro-Raman and synchrotron X-ray diffraction measurements and observed that the cation disordering of the 0-D nanoparticle is preserved up to ∼40 GPa, suppressing the reported martensitic phase transformation. On the other hand, an irreversible phase transition is observed from the 1-D nanomaterial into a new and dense high-pressure orthorhombic CaFe 2 O 4 -type structure at ∼40 GPa. The pressure-treated 0-D and 1-D nanomaterials have distinct diffuse reflectance and emission properties. In particular, a heterojunction between the inverse spinel and quenchable orthorhombic phases allows the use of 1-D Zn 2 SnO 4 nanomaterials as efficient photocatalysts as shown by the degradation of the textile pollutant methylene blue.

Quantum mechanical modeling of Zn‐based spinel oxides: Assessing the structural, vibrational, and electronic properties

“…Therefore, we consider that the E g and A 1g modes are transformed into A g mode, whereas the F 2g (1), F 2g (2), and F 2g (3) modes become B 1g , B 2g , B 3g modes, respectively, as reported in references. [63,125] Besides, P. R. Graves et al and C. Haas [126,127] have stated that many subgroups originated from a reduction in the O h higher symmetry. Such a loss of symmetry can be associated with the lattice defects or ordering of the metallic ions on their sites.…”

“…[59][60][61][62] In addition, Zn 2 SnO 4 has excellent potential for synthesis in different morphologies. [63] It has recently become possible to compute an essential number of electronic and structural parameters of solids with high accuracy from first-principle calculations. [64] These kinds of developments in computer simulations have opened up many interesting and exciting possibilities in condensed matter studies.…”

Preparation and characterization of heteroepitaxial Zn2SnO4 single crystalline films prepared on MgO (100) substrates

“…Ternary metal oxide semiconductors (TMOSs) have drawn wide attention in recent years from the viewpoints of the heightened physicochemical and photoelectrical properties compared with their simple binary counterparts . Zinc‐tin oxide (ZTO) is a typical TMOSs material with a wide band gap of 3.4‐4.2 eV . Notably, ZTO exhibits higher thermal stability than SnO 2 in hydrogen plasma and better acid‐base stability than ZnO .…”

“…1 Zinc-tin oxide (ZTO) is a typical TMOSs material with a wide band gap of 3.4-4.2 eV. 2,3 Notably, ZTO exhibits higher thermal stability than SnO 2 in hydrogen plasma and better acid-base stability than ZnO. 4 Besides, ZTO has many excellent properties such as high electron mobility, attractive optical properties, prominent ferroelectric polarization and large charge-discharge capacity, which make ZTO widely used in photo catalysis, 5 lithium-ion batteries, 6 gas sensors 7 and solar cells.…”

“…At this time, preparation of high quality single crystal ZTO film is one of the strategies to extend its applications. ZTO exists in two different phases: ZnSnO 3 and Zn 2 SnO 4 . ZnSnO 3 , including a polar LiNbO 3 (LN)-type (space group: R3c, No.…”