High-pressure Raman studies of polycrystalline<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">BaTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Venkateswaran, U. D.; Naik, V. M.; Naik, R.

doi:10.1103/physrevb.58.14256

Cited by 423 publications

(283 citation statements)

References 19 publications

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“…The sintered ceramics were poled under 3 kV/mm DC field for 30 min in a silicone oil bath at room temperature. The bulk d 33 of the ceramics was measured using a piezo-d 33 meter (Piezo d 33 Tester Pennebaker 8000 model American Piezo Ceramics Inc.). The ferroelectric properties were measured using a Radian Technologies Precision Workstation, (model P-WS) and high voltage power amplifier TREK (model 609 A, Albuquerque New Mexico, USA).…”

Section: Methodsmentioning

confidence: 99%

“…The switching spectroscopy piezo-response force microscopy using dual AC resonance tracking (SS-PFM-DART) method has proved to be an important technique to determine the effective piezoelectric coefficient d 33 in bulk samples or thin films [11][12][13][14][15][16] . In the piezo-response mode, a high frequency AC voltage superimposed at on a time variant DC bias voltage is applied to the conductive tip, causes the oscillation of electric dipoles in ferroelectric domains.…”

Section: Introductionmentioning

confidence: 99%

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Local piezo-response for lead-free Ba0.9Ca0.1Ti0.9Zr0.1O3 electro-ceramic by switching spectroscopy

et al. 2018

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The purpose of this work is to determine the effective piezoelectric coefficient (d 33 ) and the macro ferroelectric hysteresis behavior for the Ba 0.9 Ca 0.1 Ti 0.9 Zr 0.1 O 3 (BCZT). The sample was prepared by the modified Pechini method and it was sintered at 1250 ºC for 5 h. The refinements of X-ray diffraction (XRD) patterns obtained by the Rietveld method suggest a slight degree of tetragonality (c/a = 1.0025) in the perovskite structure. High counting statistics was performed in the two-dimensional grazing incidence 2D-GIXRD characterization by using synchrotron radiation. These results and the Raman spectrum analysis support the XRD interpretation. The morphology reveals a non-homogeneous terrace-type shape with a grain size distribution centered at 13 microns. The switching spectroscopy piezo-response force microscopy was used to obtained the effective d 33 = 142 pm/V. The soft ferroelectric hysteresis shows a coercive field H c = 1.3 kV/cm with a saturation polarization P s = 15.7 µC/cm 2 .

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Local piezo-response for lead-free Ba0.9Ca0.1Ti0.9Zr0.1O3 electro-ceramic by switching spectroscopy

et al. 2018

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“…For instance, the PbTiO 3 tetragonal perovskite (P4mm) transforms to cubic perovskite (Pm3m) at a high temperature of 763 K or at a high pressure of 11.2 GPa [14,15]. BaTiO 3 perovskite also exhibits a tetragonal (P4mm) to cubic (Pm3m) phase transition at a high pressure of about 2 GPa or a high temperature of 393 K [16]. The polymorphic transitions in the perovskite structural compounds often lead to a minor volume discontinuity [15,17] so that the transitions are considered as near second-order phase transitions.…”

Section: Introductionmentioning

confidence: 99%

Structural properties of PbVO₃perovskites under hydrostatic pressure conditions up to 10.6 GPa

Zhou¹,

Xiao²,

Song³

et al. 2012

J. Phys.: Condens. Matter

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High-pressure synchrotron x-ray powder diffraction experiments were performed on PbVO 3 tetragonal perovskite in a diamond anvil cell under hydrostatic pressures of up to 10.6 GPa at room temperature. The compression behavior of the PbVO 3 tetragonal phase is highly anisotropic, with the c-axis being the soft direction. A reversible tetragonal to cubic perovskite structural phase transition was observed between 2.7 and 6.4 GPa in compression and below 2.2 GPa in decompression. This transition was accompanied by a large volume collapse of 10.6% at 2.7 GPa, which was mainly due to electronic structural changes of the V 4+ ion. The polar pyramidal coordination of the V 4+ ion in the tetragonal phase changed to an isotropic octahedral coordination in the cubic phase. Fitting the observed P-V data using the Birch-Murnaghan equation of state with a fixed K 0 of 4 yielded a bulk modulus K 0 = 61(2) GPa and a volume V 0 = 67.4(1)Å 3 for the tetragonal phase, and the values of K 0 = 155(3) GPa and V 0 = 58.67(4)Å 3 for the cubic phase. The first-principles calculated results were in good agreement with our experiments.

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“…The offered interpretation basic and for the first time revealed peculiarities on a curve TDOS w-AlN does not contradict experimental dat& and explains a nature of their formation. [ [2], by Raman [3,4] and Brillouin [5] spectroscopies. Some questions about the local order around the Ti atom (local ferroelectric distortion ) and the existence of broad Raman modes in the cubic structure (not allowed by the selection rules) remain open.…”

mentioning

confidence: 99%

“…However to the present moment of the characteristic and the electronic nature of their properties even for the most widespread semiconductors are unsufficiently investigated. By us with use large claster (more than 250 atoms), shipped in an infinite crystal, are investigated peculiarities of a power spectrum electrons in BxAl1-xN solid solutions, in comparison with binary AlN and BN, in a wide range of change of concentration boron [1][2][3]. The electronic energy structure of 2H and 3C AlN and BN crystals and B x Al 1-x N solid solutions in calculated on the basis of the local coherent potential method using the cluster version of the MT approximation and the theory of multiple scattering.…”

mentioning

confidence: 99%

Structural change wide-gap semiconductor in reconstructive phase transitions: AlN, BN and B_xAl_1−xN solid solutions

Ilyasov¹,

Zhdanova²,

Nikiforov³

2006

Acta Cryst Sect A

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Keywords: wide-gap semiconductor, electronic energy structure, phase transitions, band gap, bulk modulusOf the greatest interest are semiconductors of row AlN, GaN, InN, BN, SiC, diamond, etc., that are widely used for the fabricationof optical and electronic devices. In the last years significant number of work, devoted study of structural, electronic and optical of properties wide-gap of semiconductors, is published. However to the present moment of the characteristic and the electronic nature of their properties even for the most widespread semiconductors are unsufficiently investigated. By us with use large claster (more than 250 atoms), shipped in an infinite crystal, are investigated peculiarities of a power spectrum electrons in BxAl1-xN solid solutions, in comparison with binary AlN and BN, in a wide range of change of concentration boron [1][2][3]. The electronic energy structure of 2H and 3C AlN and BN crystals and B x Al 1-x N solid solutions in calculated on the basis of the local coherent potential method using the cluster version of the MT approximation and the theory of multiple scattering. The features of the electronic structure of 2H AlN crystals are compared with X-ray K and L absorption and emission spectra of aluminum and nitrogen. An interpretation of these feature is given. The concentration dependences of the width of the upper subband of the valence band and the band gap in B x Al 1-x N solid solutions (x = 0.25, 0.5, 0.75) are investigated. Existence of carry charge from atoms of aluminium to atoms of nitrogen is shown, the size of which grows on a measure doping boron in both crystal updatings. Is shown, that the electronic power structure w-AlN and c-AlN, alongside with distinctions, has general laws, which are displayed in presence on a curve TDOS characteristic for AlN of peculiarities, in particular(personally) of peaks B and E, describing basic condition of nitrogen and aluminium in a crystal. The offered interpretation basic and for the first time revealed peculiarities on a curve TDOS w-AlN does not contradict experimental dat& and explains a nature of their formation. High pressure X-ray absorption spectroscopy at the Ti K edge is well adapted to answer these questions.The main results are: + BaTiO3 -The Ti remains off centre in the cubic phase up to 10 GPa -Above this pressure, the local structure is cubic with the Ti atom at the centre of the oxygen octahedron -The remaining intensity of the B feature is due to the quadrupolar term and to the thermal contribution + SrTiO3 -At room pressure the Ti atom is slightly off centre (disordered) -Above 5 GPa the Ti atom is at the centre of the oxygen octahedron -AFD instability occurs -A strong modification of the structure occurs above 14 GPa with a redshift of the t2g band while the eg is stable

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High-pressure Raman studies of polycrystallineBaTiO3

Cited by 423 publications

References 19 publications

Local piezo-response for lead-free Ba0.9Ca0.1Ti0.9Zr0.1O3 electro-ceramic by switching spectroscopy

Local piezo-response for lead-free Ba0.9Ca0.1Ti0.9Zr0.1O3 electro-ceramic by switching spectroscopy

Structural properties of PbVO₃perovskites under hydrostatic pressure conditions up to 10.6 GPa

Structural change wide-gap semiconductor in reconstructive phase transitions: AlN, BN and B_xAl_1−xN solid solutions

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High-pressure Raman studies of polycrystallineBaTiO3

Cited by 423 publications

References 19 publications

Local piezo-response for lead-free Ba0.9Ca0.1Ti0.9Zr0.1O3 electro-ceramic by switching spectroscopy

Local piezo-response for lead-free Ba0.9Ca0.1Ti0.9Zr0.1O3 electro-ceramic by switching spectroscopy

Structural properties of PbVO3perovskites under hydrostatic pressure conditions up to 10.6 GPa

Structural change wide-gap semiconductor in reconstructive phase transitions: AlN, BN and BxAl1−xN solid solutions

Contact Info

Product

Resources

About

Structural properties of PbVO₃perovskites under hydrostatic pressure conditions up to 10.6 GPa

Structural change wide-gap semiconductor in reconstructive phase transitions: AlN, BN and B_xAl_1−xN solid solutions