High Pressure Structural Phase Transition in AgGaTe2.

Iwamoto, Shinpei; Mori, Yojiro; Takarabe, Kenichi; Minomura, Shigeru

doi:10.4131/jshpreview.7.327

Cited by 4 publications

(2 citation statements)

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“…Here, we show an alternative route to fabricate nanostructured thermoelectric materials by room-temperature high-pressure synthesis. Chalcopyrite and related compounds exhibit pressure-induced structural modification. − Structural modification of CuInTe 2 occurs at 3.6 GPa with transformation into the cation site disordered Cmcm (d- Cmcm ) structure . In this study, we discovered that the high-pressure phase of CuInTe 2 is not stable at ambient pressure.…”

Section: Introductionmentioning

confidence: 82%

Room-Temperature Pressure-Induced Nanostructural CuInTe₂ Thermoelectric Material with Low Thermal Conductivity

et al. 2014

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A room-temperature high-pressure synthesis method is proposed as an alternative way to induce nanoscale structural disorder in the bulk thermoelectric CuInTe2 matrix. This disorder stems from the coexistence of distinct domains with different degrees and geometries of disorder at Cu/In cation sites. The lattice thermal conductivity of high-pressure-treated CuInTe2 is substantially less than that of hot-pressed CuInTe2. The Debye-Callaway model reveals that the reduced lattice thermal conductivity is mainly attributed to disorder at the Cu/In cation sites and stacking faults, which were probably created during formation of the high-pressure-treated phases. This study demonstrates that room-temperature high-pressure synthesis can produce a radical change in the crystal structure and physical properties of conventional thermoelectric materials.

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Section: Introductionmentioning

confidence: 82%

Room-Temperature Pressure-Induced Nanostructural CuInTe₂ Thermoelectric Material with Low Thermal Conductivity

et al. 2014

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“…Phase transitions have also been observed in other crystals of this group. At 3-4 Gpa, AgInTe 2 transforms into a cation-disordered orthorhombic structure with space group Cmcm [19], as well as 12.7 GPa for CuGaTe 2 and at 3.6 GPa for the CuInTe 2 crystal and others [20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Electronic, Optical, and Vibrational Properties of an AgAlS2 Crystal in a High-Pressure Phase

Rudysh,

Fedorchuk,

Brik

et al. 2023

Materials

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The aim of this study is to comprehensively examine the structural composition and properties of the AgAlS2 crystal during its high-pressure phase. This analysis delves into the second coordination environment of the crystal structure and elucidates the distinct transformations it undergoes during the phase transition. The band energy structure was calculated, and the origin of electronic levels was clarified. It is shown that the crystal becomes non-stratified during the phase transition. This study also determined the values of the crystal’s carrier effective masses, underscoring its spatial anisotropy. It was found that the calculated optical functions are similar to the crystal in the chalcopyrite structure, and their differences are shown. Further, this study involved the calculation of the crystal’s phonon spectrum, revealing the spectrum’s transformation during the phase transition. The vibrational frequencies were also obtained, with a symmetrical classification of vibrational modes. Finally, this study derived the infrared and Raman spectra of the AgAlS2 crystal, thereby providing a comprehensive picture of the crystal during its high-pressure phase.

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High‐pressure phase in the chalcopyrites CuGaTe₂ and CuInTe₂

Mori

Ikai

Takarabe

2003

Physica Status Solidi (b)

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A high-pressure X-ray diffraction study was carried out for CuGaTe 2 and CuInTe 2 chalcopyrite semiconductors up to 18.0 and 13.0 GPa, respectively. The high-pressure phase was conclusively assigned to the d-Cmcm phase (cation site disordered Cmcm). In the case of CuGaTe 2, the chalcopyrite phase transformed to the d-Cmcm phase at 12.7 GPa through the tentative d-SC phase. The bulk moduli for the three phases were determined to be 64, 81, and 103 GPa, respectively. In the case of CuInTe 2 , the chalcopyrite phase transformed to the d-Cmcm phase at 3.6 GPa. The d-SC phase did not appear. The bulk moduli for the two phases were determined to be 59.8 and 77 GPa, respectively.

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High Pressure Structural Phase Transition in AgGaTe2.

Abstract: The high pressure X-ray diffraction pattern of AgGaTe2 chalcopyrite semiconductor has been measured up to 18GPa. It

Cited by 4 publications

References 1 publication

Room-Temperature Pressure-Induced Nanostructural CuInTe₂ Thermoelectric Material with Low Thermal Conductivity

Room-Temperature Pressure-Induced Nanostructural CuInTe₂ Thermoelectric Material with Low Thermal Conductivity

Electronic, Optical, and Vibrational Properties of an AgAlS2 Crystal in a High-Pressure Phase

High‐pressure phase in the chalcopyrites CuGaTe₂ and CuInTe₂

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High Pressure Structural Phase Transition in AgGaTe2.

Abstract: The high pressure X-ray diffraction pattern of AgGaTe2 chalcopyrite semiconductor has been measured up to 18GPa. It

Cited by 4 publications

References 1 publication

Room-Temperature Pressure-Induced Nanostructural CuInTe2 Thermoelectric Material with Low Thermal Conductivity

Room-Temperature Pressure-Induced Nanostructural CuInTe2 Thermoelectric Material with Low Thermal Conductivity

Electronic, Optical, and Vibrational Properties of an AgAlS2 Crystal in a High-Pressure Phase

High‐pressure phase in the chalcopyrites CuGaTe2 and CuInTe2

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Room-Temperature Pressure-Induced Nanostructural CuInTe₂ Thermoelectric Material with Low Thermal Conductivity

Room-Temperature Pressure-Induced Nanostructural CuInTe₂ Thermoelectric Material with Low Thermal Conductivity

High‐pressure phase in the chalcopyrites CuGaTe₂ and CuInTe₂