High pressure studies of radiative recombination processes in nitride semiconductor alloys and quantum structures

Kamińska, A.; Gorczyca, I.; Teisseyre, H.; Strąk, Paweł; Krukowski, S.; Suchocki, A.

doi:10.7567/1347-4065/ab4868

Cited by 1 publication

(5 citation statements)

References 71 publications

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“…It has also been shown in Refs. [69,70] that with increasing Ga content in the QB, the electric field in the investigated structures decreases, which increases the emission efficiency. At the same time, the QB height and the carrier quantum confinement in the QW are reduced.…”

Section: Gan/algan Qwsmentioning

confidence: 91%

“…High-pressure studies, which often combine experiment and theory, can provide important results that are difficult or impossible to obtain otherwise and allow for the description of the main factors that influence radiative recombination processes and radiative efficiency. Recent studies [69,70] have shown that high pressure spectroscopy is an effective tool for analyzing factors related to strain effects, built-in electric fields, and the involvement of defect states in recombination processes in quantum heterostructures. Now we will focus on the built-in electric field (approaching a few MV/cm) present in the polar wurtzite structure of nitride heterostructures.…”

Section: Quantum Structuresmentioning

confidence: 99%

“…The strength of the built-in electric field increases with application of hydrostatic pressure [71]. To investigate the piezoelectric effects, high-pressure spectroscopy can be used based on the following relationship [69,70]:…”

Section: Quantum Structuresmentioning

confidence: 99%

“…A high-pressure study of a series of GaN/AlxGa1-xN QWs samples with layer thicknesses of QWs and QBs of about 3 mm and 4 mm, respectively, was reported in Refs. [69,70,100].…”

Section: Gan/algan Qwsmentioning

confidence: 99%

“…To compare the optical properties of the structures with and without the presence of a built-in electric field, GaN/Al0.3Ga0.7N QWs grown along polar (c-plane) and non-polar (a-plane) wurtzite crystallographic directions were reported in Refs. [70,99]. Both structures of the same geometry contained three GaN QWs of different widths (2, 3, and 4 nm) that were separated by 10 nm thick Al0.3Ga0.7N QBs.…”

Section: Gan/algan Qwsmentioning

confidence: 99%

See 4 more Smart Citations

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties – an Example of III-V Nitrides

Gorczyca,

Suski,

Perlin

et al. 2024

Preprint

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Using the example of III-V nitrides crystallizing in a wurtzite structure (GaN, AlN, InN), this review presents the special role of hydrostatic pressure in studying semiconductor properties. Starting with a brief description of high pressure techniques for growing bulk crystals of nitride compounds, we focus on the use of hydrostatic pressure techniques in both experimental and theoretical investigations of special properties of nitride compounds, their alloys and quantum structures. The band gap pressure coefficient is one of the most important parameters in semiconductor physics. Trends in its behavior in nitride structures, together with trends in pressure-induced phase transitions, are discussed in the context of the behavior of other typical semiconductors. Using InN as an example, the pressure-dependent effects typical of very narrow bandgap materials, such as conduction band filling or effective mass behavior, are described. Interesting aspects of bandgap bowing in In-containing nitride alloys, including pressure and clustering effects, are discussed.Hydrostatic pressure also plays an important role in the study of native defects and impurities, as illustrated by the example of nitride compounds and their quantum structures. Experiments and theoretical studies on this topic are reviewed. Special attention is given to hydrostatic pressure and strain effects in short periods nitride superlattices. The explanation of the discrepancies between theory and experiment in the optical emission and its pressure dependence from InN/GaN superlattices led to the well-documented conclusion that InN growth on the GaN substrate is not possible. The built-in electric field present in InGaN/GaN and AlGaN/GaN heterostructures crystallizing in wurtzite lattice can reach several MV/cm, leading to drastic changes in the physical properties of these structures and related devices. It is shown how hydrostatic pressure modifies these effects and helps to understand their origin.

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Section: Gan/algan Qwsmentioning

confidence: 91%

Section: Quantum Structuresmentioning

confidence: 99%

Section: Quantum Structuresmentioning

confidence: 99%

“…A high-pressure study of a series of GaN/AlxGa1-xN QWs samples with layer thicknesses of QWs and QBs of about 3 mm and 4 mm, respectively, was reported in Refs. [69,70,100].…”

Section: Gan/algan Qwsmentioning

confidence: 99%

Section: Gan/algan Qwsmentioning

confidence: 99%

See 3 more Smart Citations

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties – an Example of III-V Nitrides

Gorczyca,

Suski,

Perlin

et al. 2024

Preprint

View full text Add to dashboard Cite

show abstract

High pressure studies of radiative recombination processes in nitride semiconductor alloys and quantum structures

Cited by 1 publication

References 71 publications

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties – an Example of III-V Nitrides

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties – an Example of III-V Nitrides

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