2008
DOI: 10.1080/08957950701782569
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High pressure studies on the electrical resistivity of As–Te–bond Si glasses and the effect of network topological thresholds

Abstract: The variation of resistivity in an amorphous As 30 Te 70−x Si x system of glasses with high pressure has been studied for pressures up to 8 GPa. It is found that the electrical resistivity and the conduction activation energy decrease continuously with increase in pressure, and samples become metallic in the pressure range 1.0-2.0 GPa. Temperature variation studies carried out at a pressure of 0.92 GPa show that the activation energies lie in the range 0.16-0.18 eV. Studies on the composition/average co-ordina… Show more

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Cited by 2 publications
(3 citation statements)
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“…[12,[24][25][26] Figure 5 shows the behavior of the normalized resistivity as a function of composition at a constant pressure of 1.9 GPa. Unlike the As-Te-Si glasses reported earlier, [12] no signatures of topological thresholds were observed in the present Ge-Te-Tl glasses. This is in agreement with the results of the switching behavior which also do not show the presence of topological thresholds, and the suggestion that the added thallium tends to fragment the network is supported.…”
Section: Discussionmentioning
confidence: 99%
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“…[12,[24][25][26] Figure 5 shows the behavior of the normalized resistivity as a function of composition at a constant pressure of 1.9 GPa. Unlike the As-Te-Si glasses reported earlier, [12] no signatures of topological thresholds were observed in the present Ge-Te-Tl glasses. This is in agreement with the results of the switching behavior which also do not show the presence of topological thresholds, and the suggestion that the added thallium tends to fragment the network is supported.…”
Section: Discussionmentioning
confidence: 99%
“…[9,10] Further V-VI chalcogenide glasses are usually found to remain a semiconductor even up to 10 GPa. [11] Ternary glasses such as As-Te-Si [12] and As-Te-In [13] also show continuous metallization under high pressure.…”
Section: Introductionmentioning
confidence: 99%
“…Further most VVI chalcogenide glasses are usually found to remain a semiconductor even up to 10 GPa. Ternary glasses such as AsTeSe [16], AsTeSi [17] and As TeIn [18] also show continuous metallization under high pressure.…”
Section: Introductionmentioning
confidence: 99%