High purity Si–C–N thin films with tailored composition on the tie line SiC–Si3N4

Rudolphi, M.; Bruns, Michael; Baumann, H.; Geckle, Udo

doi:10.1016/j.diamond.2006.12.037

Cited by 13 publications

(7 citation statements)

References 14 publications

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“…Microhardness increase and promising field emission properties were obtained from CGed films in comparison with monolithic SiC and SiN x films deposited by PECVD [16]. Si-C-N thin films with tailored stoichiometries on the tie line SiC-Si 3 N 4 have been produced by several fold ion implantation and by a combination of RF magnetron sputtering and ion implantation [17]. These high purity thin films have been heat treated at 1250 • C under high vacuum conditions using an electron beam annealing system to enable crystallization and/or phase formation.…”

Section: Introductionmentioning

confidence: 99%

A comparative study of Si–C–N films on different substrates grown by RF magnetron sputtering

Bhattacharyya¹,

Mishra²,

Mukherjee³

et al. 2009

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

A comparative study of Si–C–N films on different substrates grown by RF magnetron sputtering

Bhattacharyya¹,

Mishra²,

Mukherjee³

et al. 2009

Journal of Alloys and Compounds

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“…Further bands at 477.3 cm -1 and 791.7 cm -1 related to overlapping (Si-O and Si-N) and (Si-N and Si-C) vibrations, become more resolved. Therefore, the FTIR confirms the synthesis of silicon nitride [13].…”

Section: Characterization Of Synthesized Silicon Nitride By Ftirmentioning

confidence: 62%

Synthesis of Silicon Nitride from Rice Husk and Sugarcane Bagasse Ashes

Abdulhameed¹,

Mbuvi²,

Changamu³

2018

J Water Technol Treat Methods

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Silicon nitride (Si 3 N 4 ) SNA, SNB, SNC and SND were synthesized by hydrothermal process at temperature of 100 Based on their infrared spectra, for SNA absorption band at 470.6 cm-1 is attributed to Si-N (stretching), which were also observed with SNB, SNC and SND, a weak band at 671.2 cm -1 which is characteristic of a silicon nitride Si-N-Si stretching vibration was observed, for SNC, peak at 574 cm -1 attribute to α-silicon nitride, as temperature increases the spectrum becomes sharper. X-ray diffraction pattern indicates that SNA material contained 64.6% α-phase and 27.8% β-phase silicon nitride. Therefore, rice husks and sugarcane bagasse have great potential as a raw material for producing Si 3 N 4 , by the hydrothermal method

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“…Dynamic-TRIM 17 calculations were performed to determine the fluence at each step in order to achieve a film-like level compositional profile in the first 150 nm below the sample surface. 18 The calculated implantation compositional profiles for the parameters in Table I are shown in Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

“…In this way the succeeding implantations smooth the profile, as the ions pass through an already implanted region. 18 In addition, sputtering at the surface removes surface layers, which may be deficient in implanted species. The implantations were performed using a low-energy ion-implanter system at GNS Science with 12 C + and 14 N + ions (from CO and N 2 gas species, respectively).…”

Section: Methodsmentioning

confidence: 99%

Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing

Carder

Markwitz

Kennedy

2010

Journal of Elec Materi

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Field emission has been demonstrated from silicon that has been ionimplanted with carbon and nitrogen. Self-assembled silicon nanostructures were prepared as a template on the surface of wafer silicon, prior to multiple low-energy ion implantations. Following ion implantation, the original surface nanostructuring was lost. However, after electron beam annealing, selfassembled surface nanostructures were observed. Nuclear reaction analysis and Rutherford backscattering spectrometry indicated a Si 0.6 C 0.1 N 0.3 layer extending to a depth of $120 nm. Electron emission was measured from the as-implanted and post-annealed samples. The implanted and annealed sample showed a low turn-on field of 10 V/lm compared with 44 V/lm for the as-implanted sample.

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High purity Si–C–N thin films with tailored composition on the tie line SiC–Si3N4

Cited by 13 publications

References 14 publications

A comparative study of Si–C–N films on different substrates grown by RF magnetron sputtering

A comparative study of Si–C–N films on different substrates grown by RF magnetron sputtering

Synthesis of Silicon Nitride from Rice Husk and Sugarcane Bagasse Ashes

Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing

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