High-purity, single-crystal InP grown by synthesis solute diffusion

Engh, R. O.; Peterson, Sindra; Thorne, J. P.; Petersen, Paul

doi:10.1063/1.92330

Applied Physics Letters

1981

DOI: 10.1063/1.92330

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High-purity, single-crystal InP grown by synthesis solute diffusion

R. O. Engh

Sindra Peterson

J. P. Thorne

et al.

Abstract: Single-crystal InP was grown by the synthesis solute diffusion (SSD) technique. The measured etch pit density of ∼10 cm−2, mobility (77 K) of 50 200 cm2 V−1 s−1 and carrier concentration (77 K) of 2.3×1014 cm−3 demonstrate the feasibility of SSD for the growth of high-quality bulk InP.

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1983

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Cited by 3 publications

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Electrical properties of n-type and p-type inp grown by the synthesis, solute diffusion technique

Siegel¹,

Kühnel²,

Koi³

et al. 1986

phys. stat. sol. (a)

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Undoped n‐InP and Zn‐doped p‐InP are grown by the SSD method. Hall measurements on wafers cut from the polycrystalline n‐InP ingots give values between 1015 and 1016 cm−3 for the carrier concentration averaged over the crystallites of the wafer. From the electron mobilities measured at 77 K on single crystalline samples (maximally 5.0 × 104 cm2/Vs) it can be concluded on the high purity and perfection of this material. Zn doping yields p‐InP with p = (3 to 4) × 1016 cm−3and μ = (113 to 140) cm2/Vs atroom temperature. The hole mobilities at 77 K(1700 to 2160 cm2/Vs) are the highest ones reported for InP up to now. By fitting of the p(T) curves between 30 and 500 K concentrations and activation energies for the shallow acceptor Zn and for a medium deep acceptor present beside Zn are determined.

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Electrical properties of n-type and p-type inp grown by the synthesis, solute diffusion technique

Siegel¹,

Kühnel²,

Koi³

et al. 1986

phys. stat. sol. (a)

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show abstract

Bulk growth of polycrystalline indium phosphide

Roy

1990

Bull. Mater. Sci.

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Preparation and characterization of high purity bulk InP

Bonner¹,

Temkin²

1983

Journal of Crystal Growth

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High-purity, single-crystal InP grown by synthesis solute diffusion

Cited by 3 publications

References 5 publications

Electrical properties of n-type and p-type inp grown by the synthesis, solute diffusion technique

Electrical properties of n-type and p-type inp grown by the synthesis, solute diffusion technique

Bulk growth of polycrystalline indium phosphide

Preparation and characterization of high purity bulk InP

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