2006
DOI: 10.1016/j.jeurceramsoc.2005.09.019
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High Q dielectric resonator material with low dielectric constant for millimeter-wave applications

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Cited by 36 publications
(11 citation statements)
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“…T he rapid development in the microelectronic technologies such as wireless LAN, intelligent transport system (ITS) and microwave‐integrated circuits (MIC) has led to an increasing demand for novel ceramic materials for use as dielectric resonators at microwave frequencies. To meet this requirement materials with high relative permittivity (ɛ r >10) are preferred due to the small size of these materials at high frequencies, minimum cross coupling effect as well as high signal propagation velocity 1–4 . In addition, a high‐quality factor ( Q u × f ) to increase the selectivity and a near zero temperature coefficient of resonant frequency (τ f ∼0) to ensure frequency stability are also recommended 5,6 .…”
Section: Introductionmentioning
confidence: 99%
“…T he rapid development in the microelectronic technologies such as wireless LAN, intelligent transport system (ITS) and microwave‐integrated circuits (MIC) has led to an increasing demand for novel ceramic materials for use as dielectric resonators at microwave frequencies. To meet this requirement materials with high relative permittivity (ɛ r >10) are preferred due to the small size of these materials at high frequencies, minimum cross coupling effect as well as high signal propagation velocity 1–4 . In addition, a high‐quality factor ( Q u × f ) to increase the selectivity and a near zero temperature coefficient of resonant frequency (τ f ∼0) to ensure frequency stability are also recommended 5,6 .…”
Section: Introductionmentioning
confidence: 99%
“…The important characteristics required for a packaging material are: (i) low dielectric constant ε r < 10 (to increase the signal speed), (ii) low dielectric loss or high quality factor (to increase selectivity), (iii) high thermal conductivity (to dissipate the heat generated), (iv) low or matching coefficient of thermal expansion to that of the materials attached to it, and (v) low temperature coefficient of resonant frequency τ f [2][3][4][5][6][7]. Rapid progress continues to be made towards achieving high speed and high frequency processing of electronic devices, requiring the electronic components and devices to have ever higher processing speed and high integration density.…”
Section: Introductionmentioning
confidence: 99%
“…Utilized frequency has also increased from microwave to millimeterwave range because large quantity of information must be transported with high speed. Dielectric resonator materials for millimeter-wave use are required to have high quality values (Q Â f) and relatively low dielectric constant (e r ) [4]. Al 2 O 3 ceramic with low e r (9.8) and high Q Â f (360,000 GHz) is a promising materials for millimeter-wave applications [5,6], and commercially available alumina normally has a Q Â f value around 10,000-20,000 GHz [7].…”
Section: Introductionmentioning
confidence: 99%
“…However, the high melting point of Al 2 O 3 necessitates a high sintering temperature of around 1700 8C [8,9]. In order to lower the sintering temperature of Al 2 O 3 ceramic, nanoparticles and sintering aids such as TiO 2 , MnO, ZnO-B 2 O 3 -SiO 2 (ZBS) glass and MgO-CaO-Al 2 O 3 -SiO 2 (MCAS) glass have been used [4,[10][11][12][13][14]. With TiO 2 addition, alumina ceramics possesses a quality factor of 333,000 GHz sintered at 1500 8C [10].…”
Section: Introductionmentioning
confidence: 99%