2017 IEEE MTT-S International Microwave Symposium (IMS) 2017
DOI: 10.1109/mwsym.2017.8059101
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High Q<inf>m</inf>×K2<inf>t</inf> intrinsically switchable BST thin film bulk acoustic resonators

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Cited by 3 publications
(1 citation statement)
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“…BAW resonators based on ferroelectric BST exhibit several interesting features, allowing potential simplification of RF frontends. Due to BST's strong electrostriction properties, BST resonators can be switched on and off with the application of a DC bias voltage [91], [92], [93], [94], [95], [96], [97], [98], [99], [100], [101], [102], [103], [104], [105]. A photograph of an intrinsically switchable BST FBAR is shown in Fig.…”
Section: Tunable and Reconfigurable Acousticsmentioning
confidence: 99%
“…BAW resonators based on ferroelectric BST exhibit several interesting features, allowing potential simplification of RF frontends. Due to BST's strong electrostriction properties, BST resonators can be switched on and off with the application of a DC bias voltage [91], [92], [93], [94], [95], [96], [97], [98], [99], [100], [101], [102], [103], [104], [105]. A photograph of an intrinsically switchable BST FBAR is shown in Fig.…”
Section: Tunable and Reconfigurable Acousticsmentioning
confidence: 99%