High-Q trenched spiral inductors and low-loss low pass filters using through silicon via processes

Yook, Jong‐Min; Kim, Dongsu; Kim, Jun Chul

doi:10.7567/jjap.53.04ee11

Cited by 7 publications

(3 citation statements)

References 27 publications

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“…For RF applications, glass substrate is also used due to its high electrical resistivity and low electrical loss, where through-glass-vias (TGVs) are developed similar to TSVs [ 39 , 40 ]. Some of the reported literature has used TSV/TGV based capacitors together with inductors fabricated by traditional integrated circuit (IC) processes (or vice versa) to form BPF structures [ 41 , 42 , 43 , 44 ], showing great potential to improve the compactness of filters. To further simplify the device structure and reduce the process complexity, a compact, fully TGV-based BPF is proposed in [ 45 ].…”

Section: Introductionmentioning

confidence: 99%

Design of a Novel Compact Bandpass Filter Based on Low-Cost Through-Silicon-Via Technology

et al. 2023

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Three-dimensional (3D) integration based on through-silicon-via (TSV) technology provides a solution to the miniaturization of electronic systems. In this paper, novel integrated passive devices (IPDs) including capacitor, inductor, and bandpass filter are designed by employing TSV structures. For lower manufacturing costs, polyimide (PI) liners are used in the TSVs. The influences of structural parameters of TSVs on the electrical performance of the TSV-based capacitor and inductor are individually evaluated. Moreover, with the topologies of capacitor and inductor elements, a compact third-order Butterworth bandpass filter with a central frequency of 2.4 GHz is developed, and the footprint is only 0.814 mm × 0.444 mm. The simulated 3-dB bandwidth of the filter is 410 MHz, and the fraction bandwidth (FBW) is 17%. Besides, the in-band insertion loss is less than 2.63 dB, and the return loss in the passband is better than 11.4 dB, showing good RF performance. Furthermore, as the filter is fully formed by identical TSVs, it not only features a simple architecture and low cost, but also provides a promising idea for facilitating the system integration and layout camouflaging of radio frequency (RF) devices.

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Section: Introductionmentioning

confidence: 99%

Design of a Novel Compact Bandpass Filter Based on Low-Cost Through-Silicon-Via Technology

et al. 2023

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“…Many methods have been tried to decrease the pass band insertion loss, e.g., by using high resistivity silicon (HRS) [6] or other types of substrate [1,[7][8][9][10]. Another way is by fabricating the filters with 3-D architecture [11][12][13]. However, HRS wafers are rather expensive while other types of substrates may bring about CTE mismatch problems.…”

Section: Introductionmentioning

confidence: 99%

A Novel Wl-Integrated Low-Insertion-Loss Filter With Suspended High-Q Spiral Inductor and Patterned Ground Shields

Zheng¹,

Han²,

Xu³

et al. 2015

PIER C

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A novel wafer level integrated low-insertion-loss filter working at 1.8 GHz (DCS LPF) with suspended inductors and patterned ground shields on the lossy silicon substrate is fabricated. Thick BCB interlayer is used as the supporting dielectric, and the backside cavity on Si wafer is formed by using a two-step back-etching process. The influence of patterned ground shields on the Q factor of the suspended inductors and the influence of low-resistivity silicon on the insertion loss of filters are analyzed by EM simulation. The fabricated 2.7 nH inductor has a maximum Q factor of 49 at 8.2 GHz and high Q factors more than 22 in the broadband frequency range from 1 GHz to 10 GHz. And the realized LPF in DCS band has the insertion loss of 0.35 dB and return loss of more than 15.5 dB at the pass band, with the second harmonic rejection being 23 dB and the third harmonic rejection being 38 dB respectively.

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“…Nevertheless, common silicon substrates with low resistivity bring high substrate losses and high parasitic capacitances to the inductors. There have been many methods to decrease the substrate losses, e.g., by using high resistivity silicon [1][2][3], glass [4][5][6], or other types of substrate and fabricating suspended inductors with 3-D methods [7][8][9][10][11]. However, high-resistivity silicon wafers are very expensive while other types of substrates may bring about CTE mismatching problems.…”

Section: Introductionmentioning

confidence: 99%

High Performance Silicon-Based Inductors for Rf Integrated Passive Devices

Han¹,

Xu²,

Li³

2014

PIER

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Abstract-High-Q inductors are realized on a 3-8 Ω · cm silicon substrate in the buildup of BCB/Cu. Anisotropic wet etching is utilized to remove the silicon in the cavities underneath the spirals from the backside. Examples of 3.5-turn spiral inductors with and without cavity are compared, and their parameter extractions are accomplished with an equivalent circuit model. Compared to the inductor without cavity, the measured peak quality factor of a 8.19-nH inductor with cavity increases from 24 at 0.8 GHz to 39 at 2.5 GHz by 67%, and the inductor with cavity has a wider bandwidth using the same equivalent model. The inductors utilizing this technique have a potential wide application in hand-held RF modules either as part of an off-chip device or as an integrated passive in a silicon interposer.

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High-Q trenched spiral inductors and low-loss low pass filters using through silicon via processes

Cited by 7 publications

References 27 publications

Design of a Novel Compact Bandpass Filter Based on Low-Cost Through-Silicon-Via Technology

Design of a Novel Compact Bandpass Filter Based on Low-Cost Through-Silicon-Via Technology

A Novel Wl-Integrated Low-Insertion-Loss Filter With Suspended High-Q Spiral Inductor and Patterned Ground Shields

High Performance Silicon-Based Inductors for Rf Integrated Passive Devices

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