High Quality A1N with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Ren, F.; Hao, Zhibiao; Zhang, Chen; Hu, Jiannan; Luo, Yi

doi:10.1088/0256-307x/27/6/068101

Cited by 11 publications

(2 citation statements)

References 20 publications

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“…In contrast, single-crystalline AlN exhibits superior optical properties due to the improved crystalline quality and reduced grain size. High-quality AlN film is generally grown on sapphire substrate through metal-organic chemical vapor deposition (MOCVD) [ 183 ] or molecular beam epitaxy (MBE) [ 184 ]. By optimizing the fabrication process, the highest obtained intrinsic Q -factor of an AlN microring resonator is 3.7 × 10 6 [ 43 ].…”

Section: Materials Platformsmentioning

confidence: 99%

χ(2) nonlinear photonics in integrated microresonators

Liu

Wen

Ren

et al. 2023

Front. Optoelectron.

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Second-order (χ(2)) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices. Due to strong photon confinement and long photon lifetime, integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical effects. However, existing silicon-based materials lack a χ(2) response due to their centrosymmetric structures. A variety of novel material platforms possessing χ(2) nonlinearity have been developed over the past two decades. This review comprehensively summarizes the progress of second-order nonlinear optical effects in integrated microresonators. First, the basic principles of χ(2) nonlinear effects are introduced. Afterward, we highlight the commonly used χ(2) nonlinear optical materials, including their material properties and respective functional devices. We also discuss the prospects and challenges of utilizing χ(2) nonlinearity in the field of integrated microcavity photonics. Graphical Abstract

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Section: Materials Platformsmentioning

confidence: 99%

χ(2) nonlinear photonics in integrated microresonators

Liu

Wen

Ren

et al. 2023

Front. Optoelectron.

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“…Recently, with progress in the growth of high-quality bulk AlN [1,2], a lot of efforts have been devoted to GaN/AlN quantum dots [QDs] because of their unique properties such as broad emission wavelength range covering the whole visible light, which provides a promising way to achieve white light-emitting diodes [LEDs] [3]. Besides, the large conduction band offset (approximately 2 eV for GaN/AlN) offers a prospect to cover the fiber optical telecommunication wavelength range (1.3 to 1.55 μm) by intersubband transition [4,5].…”

Section: Introductionmentioning

confidence: 99%

Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control

Niu

Hao

et al. 2011

Nanoscale Res Lett

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The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN/AlN QD samples with the proposed structure are grown by molecular beam epitaxy. The results show that by choosing a proper AlN spacer thickness to control the strain in GaN QDs, the internal quantum efficiencies have been improved from 30.7% to 66.5% and from 5.8% to 13.5% for QDs emitting violet and green lights, respectively.

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