High-quality and large-area 3C–SiC growth on 6H–SiC(0 0 0 1) seed crystal with top-seeded solution method

Ujihara, Toru; Seki, Kazuaki; Tanaka, Ryo; Kozawa, Shigeta; Alexander, Jan; Morimoto, Kai; Sasaki, Katsuhiro; Takeda, Yoshikazu

doi:10.1016/j.jcrysgro.2010.10.148

Cited by 20 publications

(14 citation statements)

References 27 publications

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“…Figure shows the results of micro-Raman mapping of the grown crystals for 1 h (a–c) and 2 h (d–f). 3C-SiC was not observed by Raman investigation, which was in fairly good agreement with our previous study about polytype stability of 3C-SiC. , After solution growth for 1 h, a polytype transformation from 4H-SiC to 6H-SiC and 15R-SiC occurred in about 20% and 50% of the grown crystal, respectively, while 30% of the grown crystal remained unchanged. After crystal growth for an additional 1 h, further polytype transformation occurred.…”

Section: Resultssupporting

confidence: 92%

Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth

Harada

Alexander

Seki

et al. 2012

Crystal Growth & Design

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Polytype transformations on the 4H-SiC(0001) Si face during top-seeded solution growth have been investigated by transmission electron microscopy and micro-Raman spectroscopy. 4H-, 15R-, and 6H-SiC were grown on the 4H-SiC(0001) Si face via spiral growth. Once a polytype transformation from 4H-SiC to 15R-or 6H-SiC occurs, the polytype rarely returns to 4H-SiC. Just before the polytype transformation, a disturbance in the stacking sequence involving the introduction of stacking faults was observed. A polytype transformation during spiral growth can be understood in terms of the replication of stacking faults due to twodimensional nucleation of a single bilayer on the spiral steps. This polytype transformation model shows good agreement with observed polytype transformation pathways as well as the disturbance in the stacking sequence at the interface between 4H-SiC and 15R-SiC.

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Section: Resultssupporting

confidence: 92%

Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth

Harada

Alexander

Seki

et al. 2012

Crystal Growth & Design

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“…Prior to growth, the 6H-SiC seed crystal and the Si were cleaned by sonication in methanol, acetone, and purified water (18 MO cm). We used a solvent of Si-23 at% Sc, since it was specifically selected for growing 3C-SiC (which is stable at low temperatures) at a high growth rate [17]. Syväjärvi et al [18] achieved high growth rates in liquid phase epitaxial growth of 4H-SiC and 6H-SiC at high temperatures (1700-1850 1C) using a Si-Sc-C system, which has a relatively high carbon solubility.…”

Section: Methodsmentioning

confidence: 99%

“…We used on-axis seed crystals to induce stacking faults on seed crystal surfaces at a low growth temperature of 1300 1C, since 3C-SiC is stable at low temperatures [16]. No dislocations were visible in several wide-area transmission electron microscopy (TEM) images (about 200 mm 2 ), although a few twin boundaries were observed in regions that were several micrometers thick near the 3C/6H interface [17]. In this case, the polytype that grows is determined by the competition between the thermodynamic stability of the polytype and the replication of the polytype sequence from the seed crystal.…”

Section: Introductionmentioning

confidence: 99%

Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si–Sc–C system

Seki

Alexander

Kozawa

et al. 2011

Journal of Crystal Growth

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“…2 Solution growth is a promising method to obtain high quality SiC crystals because growth proceeds under thermal equilibrium. [3][4][5] During the solution growth, MPs existing in the seed crystal have been reported to be terminated. 6 Kamei et al 4 have reported that BPD density decreases with the increase of growth thickness.…”

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Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

Harada¹,

Yamamoto²,

Seki³

et al. 2013

Apl Materials

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Evolution of threading screw dislocation (TSD) conversion during the solution growth of 4H-SiC on a vicinal crystal of 4H-SiC(0001) was investigated by synchrotron X-ray topography. Selecting appropriate X-ray wavelength and g vector, we can change the penetration of X-ray, and the dislocation behaviors with the different depth were successfully observed. Evidently TSDs parallel to the c-axis having c-component Burgers vector were changed into defects on the (0001) basal planes with the same Burgers vector as the TSDs, propagating to the [112¯0] step-flow direction by advancing macrosteps during the solution growth. The TSD conversions stochastically took place during the growth. The conversion rate was almost uniform and finally almost all TSDs were converted to the basal plane defects. The conversion rate was low at the very early stage of the growth, which implies that the macrosteps were not formed at the initial stage of the solution growth

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High-quality and large-area 3C–SiC growth on 6H–SiC(0 0 0 1) seed crystal with top-seeded solution method

Cited by 20 publications

References 27 publications

Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth

Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth

Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si–Sc–C system

Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

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