High quality and low loss surface acoustic wave SAW resonator based on chromium-doped AlN on sapphire

Laidoudi, Farouk; Amara, Saad; Caliendo, Cinzia; Boubenider, F.; Kanouni, Fares; Assali, Abdenacer

doi:10.1007/s00339-021-04395-y

Cited by 9 publications

(4 citation statements)

References 47 publications

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“…To solve this issue, Sankaranarayanan and his colleagues inserted zinc oxide-filled microcavities that behave like bumpers in a bowling alley by trapping energy near the surface that would otherwise be lost to bulk waves [ 65 , 66 ]. The microcavities, according to Laidoudi et al [ 67 ], cut energy losses by 50%. This means that we are a great deal closer to producing these portable biosensors.…”

Section: Application Of Acoustic Sensors In Biochemical Materials Det...mentioning

confidence: 99%

The Recent Development of Acoustic Sensors as Effective Chemical Detecting Tools for Biological Cells and Their Bioactivities

et al. 2023

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One of the most significant developed technologies is the use of acoustic waves to determine the chemical structures of biological tissues and their bioactivities. In addition, the use of new acoustic techniques for in vivo visualizing and imaging of animal and plant cellular chemical compositions could significantly help pave the way toward advanced analytical technologies. For instance, acoustic wave sensors (AWSs) based on quartz crystal microbalance (QCM) were used to identify the aromas of fermenting tea such as linalool, geraniol, and trans-2-hexenal. Therefore, this review focuses on the use of advanced acoustic technologies for tracking the composition changes in plant and animal tissues. In addition, a few key configurations of the AWS sensors and their different wave pattern applications in biomedical and microfluidic media progress are discussed.

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Section: Application Of Acoustic Sensors In Biochemical Materials Det...mentioning

confidence: 99%

The Recent Development of Acoustic Sensors as Effective Chemical Detecting Tools for Biological Cells and Their Bioactivities

et al. 2023

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“…Meanwhile, AlN can be mixed with InN and GaN in any ratio to form solid solution, and the light‐emitting devices based on this system can achieve full coverage from far‐infrared to deep‐ultraviolet, making it important in the fields of optical display, lighting, and LED. [ 7–11 ]…”

Section: Introductionmentioning

confidence: 99%

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Wang

Zhang

Xie

et al. 2023

Cryst. Res. Technol.

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In this paper, AlN thin films are fabricated by green and efficient metal nitride vapor phase epitaxy (MNVPE). First, AlN films are grown on c‐plane sapphire substrates at different molar flow ratios (V/III ratios) of the source material, and the effects of V/III on the crystal quality and surface morphology of the films are investigated. The growth conditions are kept constant (growth temperature of 1550 °C, growth pressure of 10 kPa, V/III ratio of 4420), and the AlN thin films are prepared by heterogeneous epitaxial growth on c‐plane sapphire, silicon (111), and GaN substrates. The crystal quality, residual stress, and luminescence properties of epitaxial AlN thin films on the three substrates are investigated using X‐ray diffraction, scanning electron microscopy, Raman spectroscopy, photoluminescence, and UV spectrophotometer. Among them, the FWHM value of the sample AlN/GaN (002) plane can reach 338 arcsec. The residual stress in samples AlN/Sapphire, AlN/GaN and AlN/Si are 1027, −81, and −541 MPa, respectively, and the sample AlN/GaN has fewer point defects. At the same time, a 50‐nanometer‐thick void layer appears in the AlN thin film samples prepared on GaN substrates, which provides a new technical idea for realizing large‐scale and high‐quality self‐supporting AlN thin films.

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“…Recently, a number of works have been devoted to the AlN doping of scandium (Sc), yttrium (Y), ytterbium (Yb), and other elements to increase the piezoelectric properties and improve the efficiency of SAW devices [9][10][11][12][13][14]. Compared to other transition metals, scandium as a dopant exhibits a structural transition from the wurtzite phase to the rocky phase, which occurs at low alloying concentrations, leading to easily synthesized and more stable alloys.…”

Section: Introductionmentioning

confidence: 99%

“…In each case, the structures enhance the SAW velocity and the electro-mechanical coupling factor k 2 . Some examples of SAW devices properties based on Sc x Al 1-x N/sapphire structures have been investigated using experiments [27] and theories [13,14,28], showing relatively high insertion losses. By comparison, Sc x Al 1-x N/sapphire structures are promising SAW devices for high-temperature sensor applications [16,29,30].…”

Section: Introductionmentioning

confidence: 99%

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Arab¹,

Kanouni²,

Serhane

et al. 2022

Crystals

Self Cite

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Within the framework of the Density Functional Theory, the elastic, dielectric, and piezoelectric coefficients of w-ScxAl1−xN material were investigated for scandium (Sc) concentrations x = 0 to 0.375. The electro-acoustic properties are used to investigate the frequency response of the SAW delay line, based on the tilt θ° of the normal c-axis of the w-ScxAl1−xN piezoelectric thin film. We found that the piezoelectric response is improved as the Sc concentration increases, which is consistent with existing works in the literature. A 2D-phononic crystal pillars was then grafted on top of the surface, and the dependence of the acoustic band gaps is investigated with the help of the finite element method as a function of the Sc concentration and the tilted angle of w-Sc0.375Al0.625N. It was found that the two first band gaps exhibit a shift toward low frequencies with increasing Sc concentration. Moreover, the second acoustic bandgap is more sensitive to the inclination angle than the first. Furthermore, the insertion loss (S21) of w-Sc0.375Al0.625N is improved by 22 dB at θ° = 60°. The c-axis tilted Sc0.375Al0.625N-SAW delay line coupled with 2D-phononic crystals is a promising structure for low-loss and high-frequency SAW devices.

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High quality and low loss surface acoustic wave SAW resonator based on chromium-doped AlN on sapphire

Cited by 9 publications

References 47 publications

The Recent Development of Acoustic Sensors as Effective Chemical Detecting Tools for Biological Cells and Their Bioactivities

The Recent Development of Acoustic Sensors as Effective Chemical Detecting Tools for Biological Cells and Their Bioactivities

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

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