High quality conductive gallium-doped zinc oxide films deposited at room temperature

Transparent conducting molybdenum-doped zinc oxide films deposited by RF magnetron sputtering

“…3. This is attributed to the improvement of the crystallinity [18]. However, when the thickness increases further to 600 nm, the intensity of the peak decreases slightly along with the increase of the FWHM, which indicates the deterioration of the crystallinity.…”

“…Hence, an increase in the crystallite size can cause a decrease in grain boundary scattering and an increase of carrier lifetime [20,21], and consequently leads to an increase of conductivity due to the increase in both Hall mobility and carrier concentration. A reduction of the ionized impurity scattering in the thicker films may be another reason of the higher Hall mobility [18]. When the thickness increases further to 600 nm, a little increase of resistivity appears along with the simultaneous decrease of Hall mobility and carrier concentration.…”

Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

“…Gallium zinc oxide (GZO) thin films have shown high conductivity and transparent properties with figure of merit comparable to those of ITO materials [5]. Among promising TCO materials, Ga 2 O 3 is a wide band gap semiconductor material (4.9 eV) and its conductivity can vary from insulator to conductor depending on the growth conditions [1,2].…”

The effect of gallium concentration and substrate temperature on the properties of Ga-Doped ZnO thin films sputtered from powder compacted target

“…Most of the previous research on TCOs has been focused on indium-doped tin oxide (ITO) and fluorine-doped tin oxide (FTO). Nevertheless, TCO films based on zinc oxide (ZnO) are also receiving much attention due to advantages such as low cost, resource availability, non-toxicity and high thermal/chemical stability [1].…”

“…Several methods have been employed to deposit Ga-doped ZnO films, including magnetron sputtering [1], chemical vapor deposition (CVD) [10], sol gel [11], spray pyrolisis [12], pulsed laser deposition (PLD) [13] and molecularbeam epitaxy (MBE) [14]. In this paper, the effects of Ga doping concentration and deposition temperature on the electrical, optical and structural properties of Ga-doped ZnO (GZO) films were investigated.…”