High-quality diamond grown by chemical-vapor deposition: Improved collection efficiency in α-particle detection

Marinelli, M.; Milani, E.; Paoletti, A.; Tucciarone, A.; Rinati, G. Verona; Angelone, M.; Pillon, M.

doi:10.1063/1.125282

Cited by 69 publications

(25 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7͑b͒, were only observed in the IBIC experiments, where the effect of priming due to irradiation is much stronger than during the ␣-experiments, due to the larger incident dose rate on to the device. It can be assumed that priming is responsible for the deactivation of bulk hole traps, 42,43 which explains the stronger effect on hole transport than on the electron performance.…”

Section: -4mentioning

confidence: 99%

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Lohstroh¹,

Sellin²,

Wang³

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

Diamond has been regarded as a promising radiation detector material for use as a solid state ionizing chamber for decades. The parameters degrading the charge transport from what is expected from an ideal crystal are still not completely understood. Recently, synthetic chemical vapor deposited ͑CVD͒ single crystal diamond has become available, offering the opportunity to study the properties of synthesized material independent of grain boundaries. We have studied the charge transport of a synthetic single crystal diamond with ␣-particle induced charge transients as a function of temperature and established the presence of a shallow hole trap with an activation energy of 0.29± 0.02 eV in some parts of the detector. Ion beam induced charge imaging has been used to study the spatial variations of the charge transport in a synthetic single crystal diamond. Pulses influenced by the shallow hole trap had their origin close to the substrate/CVD interface of the sample. They could be clearly distinguished from pulses affected by reduced charge carrier velocities due to polarization phenomena, which varied systematically with the growth direction of the CVD diamond material.

show abstract

Section: -4mentioning

confidence: 99%

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Lohstroh¹,

Sellin²,

Wang³

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…5,6 However, despite the large diffusion of the procedure, few authors have carefully studied the physical grounds of the pumping process in order to discriminate its effect on electron and hole propagation in the detection process, [7][8][9][10][11][12] so that very little is known to date about the contribution of each carrier type to the transport mechanism in the as-grown and pumped states.…”

Section: Infm-dipartimento DImentioning

confidence: 99%

Experimental determination of electron and hole mean drift distance: Application to chemical vapor deposition diamond

Marinelli

Pucella

Tucciarone

et al. 2003

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

A simple technique for measuring the electron and hole mean drift distance in chemical vapor deposition polycrystalline diamond in the as-grown and in the so-called pumped state obtained by 90 Sr ␤-particle irradiation is presented. To this purpose, the efficiency of a diamond-based particle detector was measured using a 5.5-MeV 241 Am ␣-particle source. In particular, two different experimental setups were specifically designed and realized in order to perform a systematic study of the device efficiency as a function of the ␣-particle penetration depth, both in the positive and negative bias polarization. In the first setup, air is used as an absorbing layer in order to change the energy of the impinging ␣ particles, while in the second one, the measurements were performed in vacuum and the incidence angle was varied in the 0°-80°range. The advantages of the latter setup are evidenced. The theoretical formula for the mean drift distances of carriers is derived using a properly modified Hecht model, and fitted to the data, allowing a separate evaluation of the charge collection distances of each carrier type ( e ϭ e e E and h ϭ h h E). The obtained results unambiguously show that the pumping process is much more effective on hole conduction, h being much greater than e in the pumped state. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1586475͔Chemical vapor deposition ͑CVD͒ diamond has been shown to be a suitable material for a great number of technological applications, such as particle and UV radiation detectors, 1-4 and even more so if it is driven in the so-called pumped state by ionizing irradiation, which is known to drastically improve the transport properties of synthetic diamond. 5,6 However, despite the large diffusion of the procedure, few authors have carefully studied the physical grounds of the pumping process in order to discriminate its effect on electron and hole propagation in the detection process, [7][8][9][10][11][12] so that very little is known to date about the contribution of each carrier type to the transport mechanism in the as-grown and pumped states.The aim of the present work is to carefully separate and evaluate the charge collection distance of electrons and holes in polycrystalline CVD diamond, both in the as-grown and pumped states, thus giving a better insight on the transport properties of such material. To this purpose, a 130-m-thick film was grown in our labs by microwave plasma chemical vapor deposition and a particle detector was realized and tested with a 241 Am ␣-particle source, as described elsewhere. 13 The mean drift distance of each carrier type can be separately obtained by systematically studying the efficiency of the device as a function of the incident particle penetration depth G, and by analyzing the experimental curves in the framework of a properly modified Hecht model. Indeed, the contribution of one type of carrier ͑de-pending on bias polarity͒ gradually decreases as the penetration depth is reduced.A crucial point of this work was the design and r...

show abstract

“…In addition, 241 Am ␣ particles create charges only within a depth of 15 m from the growth surface of the films, so that the effects of in-grain defects ͑homogeneously distributed͒ and grain boundaries ͑concen-trated at the diamond-substrate interface͒ 3 are better separated. A drawback of the high ionization produced by ␣ particles is the occurrence of polarization effects, causing a systematic decrease of the detector response during the measurement.…”

mentioning

confidence: 99%

“…It is clearly of great importance to know whether the pumping process can overcome this problem, since the time needed to grow diamond samples thick enough to be used as nuclear detectors is extremely long using the CVD technique. Set 2 was instead prepared to better clarify the role of grain boundaries and in-grain defects in the detection process of CVD diamond before and after the pumping process, also in view of the simple model recently proposed 3 to explain the effects of pumping. The film thickness is varied from about 20 m ͑i.e., just above the penetration depth of 5.5 MeV ␣ particles͒ to about 160 m.…”

mentioning

confidence: 99%

“…To calculate the simulated curves the distribution of the grain boundaries ͑unaffected by pumping͒ and the mean drift distance of carriers before trapping due to in-grain defects in both the as-grown (l 0 ) and pumped (l P ) states are required. Assuming an exponential density 3 of grain boundaries D(x)ϭA exp(Ϫx/b) to describe the columnar growth, with x the distance from the filmsubstrate interface, only four parameters are necessary to obtain all the curves in Figs. 4 and 5.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Systematic study of the normal and pumped state of high efficiency diamond particle detectors grown by chemical vapor deposition

Marinelli¹,

Milani²,

Paoletti³

et al. 2001

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

The efficiency and charge collection distance ͑CCD͒ of nuclear particle detectors based on high quality diamond films grown by chemical vapor deposition ͑CVD͒ have been systematically studied as a function of the methane content in the growth gas mixture and for varying film thickness. The effects of preirradiation with ␤ particles ͑pumping͒ have been thoroughly studied. The results fully support a recently proposed model ͓Marinelli et al., Appl. Phys. Lett. 75, 3216 ͑1999͔͒ discussing the role of in-grain defects and grain boundaries in determining the charge collection spectra of CVD diamond films both in the normal and in the pumped state. The model allows us to quantitatively explain the dependence of CCD and efficiency on film thickness, giving a microscopic picture of the effects of preirradiation with ionizing radiation in CVD diamond films. The highest average CCD obtained is 145 m in a 160 m thick detector ͑corresponding to about 50% average efficiency͒, while the maximum value ͑about 70% efficiency͒ is close to 370 m. In addition, CCD is shown to be higher than film thickness and to monotonically increase with thickness, indicating margins for further improvements.

show abstract

High-quality diamond grown by chemical-vapor deposition: Improved collection efficiency in α-particle detection

Cited by 69 publications

References 12 publications

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Experimental determination of electron and hole mean drift distance: Application to chemical vapor deposition diamond

Systematic study of the normal and pumped state of high efficiency diamond particle detectors grown by chemical vapor deposition

Contact Info

Product

Resources

About