High quality epitaxial FeSe0.5Te0.5thin films grown on SrTiO3substrates by pulsed laser deposition

Bellingeri, E.; Buzio, Renato; Gerbi, Andrea; Marré, D.; Congiu, S; Cimberle, M. R.; Tropeano, M.; Siri, A. S.; Palenzona, A.; Ferdeghini, C.

doi:10.1088/0953-2048/22/10/105007

Cited by 71 publications

(71 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…26,27 However, our EDX results (seen TABLE.I) show the radio of Te/Se deviates from the reported optimal value FeTe 0.5 Se 0.5 with the increase of the deposition temperature. It means that deposition temperature may affect in other ways to modulate superconductor properties, which still need more study.…”

Section: Electric Phase Transition Measurement-macroscopic Propertcontrasting

confidence: 64%

Impact of thickness on microscopic and macroscopic properties of Fe-Te-Se superconductor thin films

et al. 2015

View full text Add to dashboard Cite

A series of iron based Fe-Te-Se superconductor thin films depositing on 0.7wt% Nb-doped SrTiO3 at substrate temperatures in the 250°C -450°C range by pulsed laser ablation of a constituents well defined precursor FeTe0.55Se0.55 target sample. We study the possible growth mechanism and its influence on the superconductor properties. Experimental results indicate the superconductive and non-superconductive properties are modulated only by the thickness of the thin films through the temperature range. The films appear as superconductor whenever the thickness is above a critical value ∼30nm and comes to be non-superconductor below this value. Relative ratios of Fe to (Te+Se) in the films retained Fe/(Te+Se)<1 for superconductor and Fe/(Te+Se)>1 for non-superconductor no matter what the film growth temperature was. The effect of film growth temperature takes only the role of modulating the ratio of Te/Se and improving crystallinity of the systems. According to the experimental results we propose a sandglass film growth mechanism in which the interfacial effect evokes to form a Fe rich area at the interface and Se or Te starts off a consecutive filling up process of chalcogenide elements defect sides, the process is significant before the film thickness reaches at ∼30nm.

show abstract

Section: Electric Phase Transition Measurement-macroscopic Propertcontrasting

confidence: 64%

Impact of thickness on microscopic and macroscopic properties of Fe-Te-Se superconductor thin films

et al. 2015

View full text Add to dashboard Cite

show abstract

“…They state that the key to high-quality 11 thin films is the absence of interfacial reactions between the FeTeSe film and the substrate (figure 7). Mele et al [15] and Bellingeri et al [16,[39][40][41] confirmed that smooth, cube-on-cube epitaxial FeTe 0.5 Se 0.5 films can be obtained on several substrates: MgO, LAO, STO, yttria-stabilized zirconia (YSZ), MgO, CaF 2 and LiF. Iida et al [14] reported for the first • to the MgO substrate, whereas the FeTeSe film showed the cube-on-cube epitaxial relation (figure 8).…”

Section: Fet E X Se 1−x Filmsmentioning

confidence: 86%

“…Bellingeri et al [16,[39][40][41] extensively analyzed the properties of FeTe 0.5 Se 0.5 films deposited on MgO, YSZ, STO, CaF 2 , LiF and LAO. They reported a biaxial compressive strain effect by LAO substrate on 11 films, with shrinkage of both the a-and c-axes.…”

Section: 32mentioning

confidence: 99%

Superconducting properties of iron chalcogenide thin films

Mele

2012

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

Iron chalcogenides, binary FeSe, FeTe and ternary FeTe x Se 1−x , FeTe x S 1−x and FeTe:O x , are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i) easy fabrication and epitaxial growth on common single-crystal substrates; (ii) strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe 0.5 Se 0.5 , zero-resistance transition temperature T bulk c0 = 13.5 K, but T film c0 = 19 K on LaAlO 3 substrate); (iii) high critical current density (J c ∼ 0.5 × 10 6 A cm 2 at 4.2 K and 0 T for FeTe 0.5 Se 0.5 film deposited on CaF 2 , and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition) with a weak dependence on magnetic field; (iv) high upper critical field (∼50 T for FeTe 0.5 Se 0.5 , B c2 (0), with a low anisotropy, γ ∼ 2). These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20-50 T) and low temperatures (2-10 K).

show abstract

“…12 The SrFe 2 As 2 :Co epitaxial films showed a superconducting transition at 20 K with a small magnetic field anisotropy. 13 After that, thin film growth of LaFeAsO 14 and Fe(Se, Te) [15][16][17][18][19] have been reported by other groups.…”

Section: Footnotesmentioning

confidence: 99%

Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped

Katase

Hiramatsu

Yanagi

et al. 2009

Solid State Communications

View full text Add to dashboard Cite

High quality epitaxial FeSe_0.5Te_0.5thin films grown on SrTiO₃substrates by pulsed laser deposition

Cited by 71 publications

References 12 publications

Impact of thickness on microscopic and macroscopic properties of Fe-Te-Se superconductor thin films

Impact of thickness on microscopic and macroscopic properties of Fe-Te-Se superconductor thin films

Superconducting properties of iron chalcogenide thin films

Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped

Contact Info

Product

Resources

About