High quality factor RF MEMS tunable capacitor

Hailu, Zewdu

doi:10.1007/s00542-016-3181-z

Cited by 9 publications

(3 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These methods include tunable capacitors with comb-drive actuators (Nguyen et al 2004), or parallel-plate capacitors paired with actuators (Afrang et al 2015;Bakri-Kassem and Mansour 2006). The power consumption of MEMS tunable capacitors is negligible (Hailu 2017). MEMS tunable capacitors have been developed using micromachining processes (Hoivik et al 2001).…”

Section: Introductionmentioning

confidence: 99%

A New Electrostatic Tunable Capacitor For Wide Ranges Of Applications

Razaghpour,

Ghasemi,

Fathi

2024

Preprint

View full text Add to dashboard Cite

A new electrostatically tunable capacitor for wide range of frequencies is proposed in this paper. A complete design rule is proposed to design a variable capacitor in the range of 0.01 pF – 2.05 pF due the its application. The designed capacitor occupies 0.03 mm 2 – 1.12 mm 2 space based on the required capacitance value which is so small comparing the related published works. The floating technique is used to get the high-quality factor. The quality factor of the proposed capacitor is in the range of 45 to 100 over the frequency range of 1.28G to 2.78GHz, and also the tunability range of the tunable capacitor is 374%. After presenting a complete design rule with the related equations, the proposed capacitor is used in an amplifier circuit with a spiral inductor and the performance of the proposed capacitor is evaluated and compared with other capacitors. The COMSOL Multiphysics is used for simulation.

show abstract

Section: Introductionmentioning

confidence: 99%

A New Electrostatic Tunable Capacitor For Wide Ranges Of Applications

Razaghpour,

Ghasemi,

Fathi

2024

Preprint

View full text Add to dashboard Cite

show abstract

“…RF-MEMS tunable capacitors are more suitable for these systems than any other devices such as p-i-n diodes, silicon-on-insulator (SOI) switches, [9][10][11] or barium-strontium-titanate (BST) type tunable capacitors, 12) thanks to their low loss and excellent linearity. [13][14][15][16][17][18][19] In order to use a MEMS tunable capacitor in a transmitting system, high-power handling is needed. For example, power handling of up to +35 dBm is required in the global system for mobile communications (GSM).…”

Section: Introductionmentioning

confidence: 99%

CMOS-embedded high-power handling RF-MEMS tunable capacitor using quadruple series capacitor and slit with dielectric bridges structure

Yamazaki

Kurui

Saito

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this paper, we report on a high-power handling RF-MEMS tunable capacitor that has a quadruple series capacitor (QSC) and a movable electrode using a slit with dielectric bridges (SDB) structure. The QSC structure consists of two fixed metal–insulator–metal (MIM) capacitors and two MEMS capacitor elements connected in series, and enables reduction of the RF voltage to the MEMS capacitors. The SDB structure is able to increase the release voltage without increasing the pull-in voltage. The combination of these structures enables improving power handling capabilities. A capacitor bank using QSC and SDB structures was fabricated by a micromachining process above CMOS control circuits. Measurement results demonstrate the excellent power handling capability up to +44 dBm for cold switching, and up to +35 dBm under hot switching. Moreover, the Q-factor of the capacitor bank is very high that is above 150 at 1 GHz, and the capacitance can be changed from 1.1 to 5.3 pF at a resolution of 4 bits by the internal control circuits thanks to monolithic integration.

show abstract

“…Currently, efforts have been made to investigate tunable passive components such as capacitors and inductors for this goal. Between these two, tunable capacitors have been studied quite thoroughly from structure to material to have devices such as MEMS-based 2,3 and varactor based. 4,5 The need for tunable inductor is consistently high due to its many benefits in broad range applications.…”

mentioning

confidence: 99%

Experimental Demonstration of Vanadium Dioxide Phase Change Thin Film Based Tunable Spiral Inductors

Shin

Attariani

et al. 2020

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this paper, a tunable spiral inductor integrated with vanadium dioxide (VO2) thin film on coplanar waveguide (CPW) transmission line is proposed. The tunable inductance is achieved by using the reversible, thermally controlled VO2 thin film. VO2 is one of metal to insulator phase transition (MIT) materials, which can be a potential solution for reconfigurable RF/microwave wireless communication systems. The VO2 based tunable inductors were fabricated on the sapphire substrate. A model is used to study the fingerprints of MIT and verify the nature of transition in the film. The scattering parameter measurements are taken in the frequency range from 10 MHz to 8 GHz with 801 points. The equivalent circuits have been used to characterize the behavior of tunable inductors and extract the equivalent component values, which show excellent matching to the measured S parameters. The measured results have shown an inductance tunability of 35.24% (3.856 nH−2.498 nH) at 4 GHz.

show abstract

High quality factor RF MEMS tunable capacitor

Cited by 9 publications

References 22 publications

A New Electrostatic Tunable Capacitor For Wide Ranges Of Applications

A New Electrostatic Tunable Capacitor For Wide Ranges Of Applications

CMOS-embedded high-power handling RF-MEMS tunable capacitor using quadruple series capacitor and slit with dielectric bridges structure

Experimental Demonstration of Vanadium Dioxide Phase Change Thin Film Based Tunable Spiral Inductors

Contact Info

Product

Resources

About