High Quality GaAs Epitaxial Layers Grown from Ga–As–Bi Solutions  by Liquid Phase Epitaxy

Saravanan, S.; Jeganathan, K.; Baskar, K.; Kumar, J.; Subramanian, C.; Soga, Tetsuo; Jimbo, Takashi; Arora, B. M.

doi:10.1143/jjap.36.3385

Cited by 14 publications

(3 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…AlGaAs layers were grown by liquid phase epitaxy in a piston graphite boat. The melt height is constant in this design of the boat, which reduces the error in determining the thickness of the layer or the growth rate 25 , 26 . Theoretical liquidus and solidus isotherms (Fig.…”

Section: Methodsmentioning

confidence: 99%

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Khvostikova,

Vlasov,

Ber

et al. 2024

Sci Rep

View full text Add to dashboard Cite

Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the AlxGa1−xAs layer the high temperature LPE growth technique is required. However high epitaxial temperature increases the unintentional doping level. Epitaxy from mixed Ga–Bi melts was investigated as a way to solve this problem. It was found that for growing relatively thick AlxGa1−xAs layers, it is expedient to use Ga–Bi melts with 20 at% or less bismuth content. SIMS and Hall characterization of AlxGa1−xAs layers revealed that the growth of AlxGa1−xAs from mixed Ga-Bi melts reduces the background doping level (including carbon) and influences the native defect formation keeping the n-type conductivity. This effect is explained by the changes of the group III and V elements concentrations in the melt as well as Bi incorporation in the lattice.

show abstract

Section: Methodsmentioning

confidence: 99%

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Khvostikova,

Vlasov,

Ber

et al. 2024

Sci Rep

View full text Add to dashboard Cite

show abstract

“…AlGaAs layers were grown by liquid phase epitaxy in a piston graphite boat. The melt height is constant in this design of the boat, which reduces the error in determining the thickness of the layer or the growth rate [15,16]. Theoretical liquidus and solidus isotherms (Fig.…”

Section: Growth Techniquementioning

confidence: 99%

“…Quantitative analysis of the carbon and bismuth content in the layers was carried out according to a procedure based on the so-called relative sensitivity coe cients technique [23,24]. To study the carbon content, the relative sensitivity coe cients were preliminarily determined on the reference samples of GaAs and AlGaAs layers with implanted carbon (1×10 15 cm − 2 at 120 keV). Bismuth content estimation was based on its relative sensitivity coe cient for GaAs [25].…”

Section: Characterizationmentioning

confidence: 99%

Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt

Khvostikova

Vlasov

Ber

et al. 2023

Preprint

View full text Add to dashboard Cite

Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the AlxGa1−xAs layer the high temperature LPE growth technique is required. However high epitaxial temperature increases the unintentional doping level. Epitaxy from mixed Ga-Bi melts was investigated as a way to solve this problem. It was found that for growing relatively thick AlxGa1−xAs layers, it is expedient to use Ga-Bi melts with 20 at.% or less bismuth content. SIMS and Hall characterization of AlxGa1−xAs layers revealed that the growth of AlxGa1−xAs from mixed Ga-Bi melts reduces the background doping level (including carbon) and influences the native defect formation keeping the n-type conductivity. This effect is explained by the changes of the group III and V elements concentrations in the melt as well as Bi incorporation in the lattice.

show abstract

On the Bismuth Composition Dependent Concentration of Arsenic Atoms during LPE Growth of GaAs Layers from Ga–As–Bi Solution

Jeganathan

Saravanan

Baskar

et al. 1998

phys. stat. sol. (a)

View full text Add to dashboard Cite

The concentration of arsenic atoms from Ga + Bi mixed solvent has been calculated in the range of 0.4 to 100 at% of bismuth for different saturation temperatures corresponding to the cooling rates of 0.32, 1 and 10 K min—1 at a constant equilibrium temperature of 1023 K using appropriate boundary conditions. It has been observed that the thickness of the epitaxial layer for 0 to 20% of bismuth has been found to be very high due to the immiscible region. The change in arsenic concentration in the mixed Ga–Bi–As solution has been observed to be dependent on the bismuth composition and compared with our theoretical values. The simulated layer thickness value agrees well with the experimental results obtained by the authors.

show abstract

High Quality GaAs Epitaxial Layers Grown from Ga–As–Bi Solutions by Liquid Phase Epitaxy

Cited by 14 publications

References 9 publications

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt

On the Bismuth Composition Dependent Concentration of Arsenic Atoms during LPE Growth of GaAs Layers from Ga–As–Bi Solution

Contact Info

Product

Resources

About