High-Quality GaN Film Grown by HVPE with an Anodized Aluminum Oxide Mask

Lei, Bing; Yu, Guanghui; Ye, Haohua; Meng, Sheng; Qi, Ming; Li, Aizhen

doi:10.1149/1.2201250

Cited by 5 publications

(3 citation statements)

References 21 publications

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“…The subsequent growth of heteroepitaxial materials beyond the pseudomorphic limit generates strain-relaxed regions of material within the pores of the AAO. This approach has been used to decrease the threading dislocation density during GaN growth [130,131] on Si (1 1 1) and c-plane sapphire [132]. Growth through the AAO template results in a decreased dislocation density within the film, typically assessed as a decrease in the FWHM of the x-ray diffraction pattern.…”

Section: Nanostructured Materials For Defect Reductionmentioning

confidence: 99%

Nanofabrication of III–V semiconductors employing diblock copolymer lithography

Kuech¹,

Mawst²

2010

J. Phys. D: Appl. Phys.

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To fully exploit the potential advantages of ideal quantum dots (QDs) (i.e. full 3D carrier confinement), elimination of the wetting layer and a uniform monomodal QD size distribution is needed. Nanopatterning with selective metalorganic chemical vapour deposition (MOCVD) QD growth has potential for achieving a higher degree of control over the QD formation, compared with the conventional Stranski–Krastanov (SK) self-assembly growth process. QD formation employing large surface area patterning prepared by dense nano-scale (20–30 nm diameter) diblock copolymer lithography is described. The resulting pattern consists of perpendicularly ordered cylindrical domain formed as part of a self-organizing diblock copolymer, such as polystyrene-block-poly(methylmethacrylate) (PS-b-PMMA). This pattern can be transferred to an underlying substrate or dielectric layer. Selective MOCVD growth of the QDs is achieved by employing the nanopatterned template mask. The resulting QD densities of 5 × 1010 cm−2 are comparable to densities achieved using the SK self-assembly growth mode. Nanopatterned growth yields a nearly monomodal QD size distribution. Variable temperature photoluminescence has been used to characterize the optical properties of capped InGaAs QDs on GaAs (λ ∼ 1.1 µm) and InP (λ ∼ 1.5 µm) substrates and preliminary results on the incorporation of such materials into diode laser structures are discussed. The extension of nanopatterned growth, beyond the pseudomorphic limit in the case of growth of strained-layer epitaxy, can lead to defect reduction and an improved morphology when compared with non-patterned growth.

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Section: Nanostructured Materials For Defect Reductionmentioning

confidence: 99%

Nanofabrication of III–V semiconductors employing diblock copolymer lithography

Kuech¹,

Mawst²

2010

J. Phys. D: Appl. Phys.

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“…Compared with patterning in conventional ELO, the nanometer-scale ELO technique, taking advantage of three-dimensional stress relief mechanisms, is expected to exhibit a further improvement of epilayer quality over the whole wafer area. [7][8][9][10][11][12][13] Furthermore, in view of the uniform feature in the subsequent overgrown layer, nanometer-scale patterned templates are proposed to play important roles in nano-heteroepitaxial growth. 14 Several different nanoporous substrates have been reported to overgrow GaN films with low dislocation and effective strain relaxation.…”

mentioning

confidence: 99%

“…In this article, a nanoporous GaN film, prepared by inductively coupled plasma etching ͑ICP͒ employing AAO membrane as a mask, was used as a template for the subsequent overgrowth of a thick GaN layer by HVPE. Compared with the direct growth of GaN on an AAO mask, 13 this way can reduce the possibility of impurities contamination and relax the strain in the epilayer through the formation of voids at the interface during the growth process; at the same time, the results of HVPEGaN material showed a significant improvement of crystalline quality and effective strain relaxation, compared with the sample grown directly on an as-grown GaN template.…”

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confidence: 99%

Thick GaN Grown on a Nanoporous GaN Template by Hydride Vapor Phase Epitaxy

Wang

Lin

et al. 2008

Electrochem. Solid-State Lett.

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High-quality thick gallium nitride ͑GaN͒ films were overgrown by hydride vapor phase epitaxy ͑HVPE͒ on a nanoporous GaN template which was prepared by inductively coupled plasma etching employing an anodized aluminum oxide mask. An obvious reduction of the dislocation density in the thick GaN layer was demonstrated by high-resolution X-ray diffraction, which exhibited the improved crystalline quality in GaN films overgrown on a nanopatterned surface. Moreover, the peak redshift in photoluminescence and micro-Raman spectroscopy indicates a significant strain relaxation in the HVPE-GaN layer. Compared with conventional overgrowth, such a deposition pathway is a more promising technique for the growth of thick GaN layers.Gallium nitride ͑GaN͒ material, and its alloys with indium and aluminum nitride, have received increased attention during the last decade, 1,2 due to their extensive application in optoelectronics and high-power and high-frequency electronics. Although the related researches have made remarkable progress, GaN films are still grown on the foreign substrates such as sapphire, GaAs, SiC, silicon, etc. Heteroepitaxial layers typically show a high density of threading dislocations owing to obvious lattice and thermal mismatches between GaN epilayers and substrates. The threading dislocation acts as a strong nonradiative center inside GaN films and limits the performance of optoelectronic devices. To solve these problems, many attempts have been made to reduce the defect density, such as a low-temperature GaN buffer layer, 3 multiple-step processes, 4 and high-temperature AlN buffer layers. 5 Another typical technique, epitaxial lateral overgrowth ͑ELO͒, 6 which usually employs a patterned thin-film mask, can effectively reduce the dislocation density from 10 10 to 10 6 cm −2 . Compared with patterning in conventional ELO, the nanometer-scale ELO technique, taking advantage of three-dimensional stress relief mechanisms, is expected to exhibit a further improvement of epilayer quality over the whole wafer area. 7-13 Furthermore, in view of the uniform feature in the subsequent overgrown layer, nanometer-scale patterned templates are proposed to play important roles in nano-heteroepitaxial growth. 14 Several different nanoporous substrates have been reported to overgrow GaN films with low dislocation and effective strain relaxation. For example, nanoporous SiC 15 was formed by means of anodization; Faree et al. 16 created nanoporous GaN template by UV-assisted electroless etching; and Kusakabe et al. 17 have achieved GaN nanocolumns grown on AlN nucleation layers. In contrast, anodized aluminum oxide ͑AAO͒ film, with controllability of the feature size and spacing, has been extensively employed as a membrane to form many different semiconductor nanostructures, such as nanopores, nanodots, and nanopillar arrays.Compared to metallorganic chemical vapor deposition ͑MOCVD͒ and molecular beam epitaxy, the growth rate of hydride vapor phase epitaxy ͑HVPE͒ can reach several hundred micrometers per hour; thus, it i...

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Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres

Wei

Chen

et al. 2012

Materials Letters

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High-Quality GaN Film Grown by HVPE with an Anodized Aluminum Oxide Mask

Cited by 5 publications

References 21 publications

Nanofabrication of III–V semiconductors employing diblock copolymer lithography

Nanofabrication of III–V semiconductors employing diblock copolymer lithography

Thick GaN Grown on a Nanoporous GaN Template by Hydride Vapor Phase Epitaxy

Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres

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