High-quality GaN films grown on chemical vapor-deposited graphene films

Chung, Kunook; Park, Suk In; Baek, Hong Sun; Chung, J.-S.; Yi, Gyu‐Chul

doi:10.1038/am.2012.45

Cited by 99 publications

(75 citation statements)

References 21 publications

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“…3b). It should be noted that CVD-grown graphene on Cu foils cannot be employed for obtaining single-crystalline films as the graphene itself is polycrystalline 12,13 .…”

Section: Resultsmentioning

confidence: 99%

“…For example, direct growth of 2D on 2D materials forms flakes such as MoS 2 flakes on graphene 2,11 , whereas direct epitaxy of sp 3 -bonded 3D materials on 2D materials causes the formation of 3D clusters such as GaN clusters on h-BN or graphene 2,[6][7][8][9][10] . Recently, growth of planar 3D material films on 2D materials was demonstrated by employing interfacial buffers between 3D and 2D materials to promote nucleation of 3D materials on 2D materials such as GaN film growth on ZnO nanowalls/ graphene 9,12,13 and GaN film growth on AlN/h-BN (or graphene) 10,14 . Even with the interfacial buffer, however, the quality of GaN films grown on 2D materials is significantly worse than that on a conventional SiC or sapphire substrate.…”

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confidence: 99%

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Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Kim¹,

Bayram²,

Park³

et al. 2014

Nat Commun

360

299

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There are numerous studies on the growth of planar films on sp 2 -bonded two-dimensional (2D) layered materials. However, it has been challenging to grow single-crystalline films on 2D materials due to the extremely low surface energy. Recently, buffer-assisted growth of crystalline films on 2D layered materials has been introduced, but the crystalline quality is not comparable with the films grown on sp 3 -bonded three-dimensional materials. Here we demonstrate direct van der Waals epitaxy of high-quality single-crystalline GaN films on epitaxial graphene with low defectivity and surface roughness comparable with that grown on conventional SiC or sapphire substrates. The GaN film is released and transferred onto arbitrary substrates. The post-released graphene/SiC substrate is reused for multiple growth and transfer cycles of GaN films. We demonstrate fully functional blue light-emitting diodes (LEDs) by growing LED stacks on reused graphene/SiC substrates followed by transfer onto plastic tapes.

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“…3b). It should be noted that CVD-grown graphene on Cu foils cannot be employed for obtaining single-crystalline films as the graphene itself is polycrystalline 12,13 .…”

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Kim¹,

Bayram²,

Park³

et al. 2014

Nat Commun

360

299

View full text Add to dashboard Cite

show abstract

“…[17][18][19][20][21] Moreover, CVD-graphene has great scalability and extremely thin layered hexagonal lattice structure as an excellent substrate for GaN growth. However, GaN films grown on the CVD-graphene have high density of defects including grain boundaries and dislocations due to the polycrystallinity, [22,23] which significantly deteriorate device characteristics. Herein, we report the fabrication of flexible light-emitting diode (LED) using high-quality GaN microdisks.…”

Section: Doi: 101002/adma201601894mentioning

confidence: 99%

Flexible GaN Light‐Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots

et al. 2016

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The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light-emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro-LED arrays are transferred onto Cu foil by a simple lift-off technique, which works reliably under various bending conditions.

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“…The inset in Figure 2a shows the rocking curves of the GaN (0002) peak, where the full width at half maximum value of the rocking curve was measured to be 2.37°. Although the full width at half maximum value was slightly larger than that of the GaN films grown on CVD-grown graphene films, 20 the results of both the θ-2θ scan and the rocking curve suggest the preferable c-axis alignment of the GaN films grown on CVD-grown h-BN. Furthermore, as shown in Figure 2b, azimuthal (ϕ)-scans of the GaN(1012) direction exhibited diffraction peaks with sixfold symmetry.…”

Section: Resultsmentioning

confidence: 69%

Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets

Chung

et al. 2017

NPG Asia Mater

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Single-crystal gallium nitride (GaN) layers were directly grown on centimeter-scale hexagonal boron nitride (h-BN). Using chemical vapor deposition (CVD), centimeter-scale h-BN films were synthesized on a single-crystal Ni(111) and readily transferred onto amorphous fused silica supporting substrates that had no epitaxial relationship with GaN. For growing fully coalescent GaN layers on h-BN, the achievement of high-density crystal growths was a critical growth step because the sp 2 -bonded h-BN layers are known to be free of dangling bonds. Unlike GaN layers grown on a typical heterogeneous sapphire substrate, the morphological and microstructural results strongly suggest a high-density growth feature that is driven by the atomic cliffs inherent in the CVD-grown h-BN layers. More importantly, the GaN layers grown on CVD-grown h-BN exhibited a flat and continuous surface morphology with well-aligned crystal orientations both along the c-axis and in-plane, indicating the characteristics of GaN heteroepitaxy on h-BN. NPG Asia Materials (2017) 9, e410; doi:10.1038/am.2017.118; published online 28 July 2017 INTRODUCTION There has been significant demand for the fabrication of conventional semiconductor devices in transferable and flexible forms to provide a route for the development of next-generation optoelectronics and electronics. 1-3 Among the various efforts to meet this demand, a new material system has been developed that involves the growth of semiconductor materials directly on twodimensional (2D) layered graphene. Because semiconductors that are grown on graphene layers can be easily transferred to other foreign substrates, including plastic and metal, all cost restrictions arising from substrates can be avoided; 4-7 furthermore, the semimetallic graphene substrates can simultaneously act as current injection and/or spreading layers. Based on these advantages, various group II-VI and III-V semiconductor nanostructures and thin films have been grown on graphene for a range of applications, including light-emitting diodes, solar cells, power generators and sensors. [8][9][10] However, semiconductor heterostructures grown on 2D films still exhibit limited manufacturing scalability because of the difficulty of preparing large-size singlecrystalline 2D substrates. Although single-crystal 2D substrates can ensure that highly crystalline semiconductors can be grown for excellent, uniform device performance, small flakes of mechanically delaminated 2D layered materials are not desirable for practical device applications. In addition, the typical large-scale 2D films synthesized on metal foils by chemical vapor deposition (CVD) are polycrystalline that degrades the crystallinity of the semiconductors grown on CVD-grown 2D films. In this study, we

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High-quality GaN films grown on chemical vapor-deposited graphene films

Cited by 99 publications

References 21 publications

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Flexible GaN Light‐Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots

Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets

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